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Results:
1-14
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Results: 14
Authors:
Sadofyev, YG
Pevtsov, VF
Dianov, EM
Trubenko, PA
Korshkov, MV
Citation: Yg. Sadofyev et al., Molecular beam epitaxy growth and characterization of ZnTe : Cr2+ layers on GaAs(100), J VAC SCI B, 19(4), 2001, pp. 1483-1487
Authors:
Sadofyev, YG
Konnov, VM
Loiko, NN
Gippius, AA
Citation: Yg. Sadofyev et al., Photoluminescence from ZnTe : Yb films grown on (100) GaAs by molecular beam epitaxy, J VAC SCI B, 19(4), 2001, pp. 1492-1496
Authors:
Venger, YF
Semenova, GN
Korsunskaya, NE
Semtsiv, MP
Borkovskaya, LV
Sharibaev, M
Braylovsky, YY
Sadofyev, YG
Citation: Yf. Venger et al., Optical characterization of CdZnTe/ZnTe heterostructures modified by electron or X-ray irradiation, MAT SCI E B, 80(1-3), 2001, pp. 193-196
Authors:
Kozlovsky, VI
Sadofyev, YG
Litvinov, VG
Citation: Vi. Kozlovsky et al., Band alignment in quantum-dimensional structures based on Zn(Cd)Te and Zn(Cd)Se: theory and experiment, IAN FIZ, 65(2), 2001, pp. 298-301
Authors:
Kozlovsky, VI
Sadofyev, YG
Citation: Vi. Kozlovsky et Yg. Sadofyev, Investigation of e-h pair compression in molecular beam epitaxy grown ZnCdSe/ZnSe multiquantum wells at volume excitation by electron beam, J VAC SCI B, 18(3), 2000, pp. 1538-1541
Authors:
Sadofyev, YG
Yevstigneev, SV
Kopaev, YV
Shipitsin, DS
Shmelev, SS
Citation: Yg. Sadofyev et al., New approach to the independent ohmic contact formation in the structures with two parallel isotype quantum wells, J VAC SCI B, 18(3), 2000, pp. 1668-1671
Authors:
Kozlovsky, VI
Sadofyev, YG
Litvinov, VG
Citation: Vi. Kozlovsky et al., Band alignment in ZnCdTe/ZnTe and ZnCdSe/ZnSe SQW structures grown on GaAs(100) by MBE, NANOTECHNOL, 11(4), 2000, pp. 241-245
Authors:
Melnik, NN
Sadofyev, YG
Zavaritskaya, TN
Vodop'yanov, LK
Citation: Nn. Melnik et al., Multiphonon relaxation in ZnSe thin films and ZnSe/ZnCdSe MQW structures, NANOTECHNOL, 11(4), 2000, pp. 252-255
Authors:
Sadofyev, YG
Burbaev, TM
Kurbatov, VA
Rzaev, MM
Tsvetkov, VA
Bayzer, MV
Sadofyev, SY
Larionov, YV
Citation: Yg. Sadofyev et al., The investigation of 3D Ge islands on Si(001), IAN FIZ, 64(2), 2000, pp. 273-280
Authors:
Kozlovsky, VI
Krysa, AB
Korostelin, YV
Sadofyev, YG
Citation: Vi. Kozlovsky et al., MBE growth and characterization of ZnTe epilayers and ZnCdTe/ZnTe structures on GaAs(100) and ZnTe(100) substrates, J CRYST GR, 214, 2000, pp. 35-39
Authors:
Bagaev, VS
Zaitsev, VV
Onishchenko, EE
Sadofyev, YG
Citation: Vs. Bagaev et al., Photoluminescence of various Zn1-xCdxTe/ZnTe heterostructures grown by MBEon GaAs(001) and ZnTe(001) substrates: temperature dependences, J CRYST GR, 214, 2000, pp. 250-254
Authors:
Melnik, NN
Sadofyev, YG
Zavaritskaya, TN
Citation: Nn. Melnik et al., Multiphonon relaxation in ZnSe/ZnCdSe superlattice, J CRYST GR, 214, 2000, pp. 651-655
Authors:
Kozlovsky, VI
Sadofyev, YG
Litvinov, VG
Citation: Vi. Kozlovsky et al., Deep-level transient spectroscopy and cathodoluminescence of CdxZn1-xTe/ZnTe QW structures grown on GaAs(100) by MBE, J CRYST GR, 214, 2000, pp. 983-987
Authors:
Sadofyev, YG
Citation: Yg. Sadofyev, Features of production and photoelectrical properties of longperiodical stressed Si-GeSi superlattices, IAN FIZ, 63(2), 1999, pp. 249-254
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