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Jouault, B
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Sadowski, ML
Robert, JL
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Authors:
Contreras, S
Knap, W
Frayssinet, E
Sadowski, ML
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Authors:
Neu, G
Teisseire, M
Frayssinet, E
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Sadowski, ML
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Prystawko, P
Citation: G. Neu et al., Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers, APPL PHYS L, 77(9), 2000, pp. 1348-1350
Authors:
Knap, W
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Chaubet, C
Sadowski, ML
Maude, D
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Shur, MS
Citation: W. Knap et al., Conduction band energy spectrum of two-dimensional electrons in GaN/AlGaN heterojunctions, PHYS ST S-B, 216(1), 1999, pp. 719-725
Authors:
Raymond, A
Juillaguet, S
Elmezouar, I
Zawadzki, W
Sadowski, ML
Kamal-Saadi, M
Etienne, B
Citation: A. Raymond et al., Oscillations of 2D electron density in GaAs/Ga0.67Al0.33As heterostructures in the QHE regime, SEMIC SCI T, 14(10), 1999, pp. 915-920
Authors:
Sadowski, ML
Grynberg, M
Witowski, AM
Huant, S
Martinez, G
Citation: Ml. Sadowski et al., Bolometric effect in the far-infrared response of a conducting layer on a semi-insulating substrate, PHYS REV B, 60(15), 1999, pp. 10908-10912