Authors: Mereuta, A Saint-Girons, G Bouchoule, S Sagnes, I Alexandre, F Le Roux, G Decobert, J Ougazzaden, A

Citation: A. Mereuta et al., (InGa)(NAs)/GaAs structures emitting in 1-1.6 mu m wavelength range, OPT MATER, 17(1-2), 2001, pp. 185-188

Authors: Saint-Girons, G Mereuta, A Patriarche, G Gerard, JM Sagnes, I

Citation: G. Saint-girons et al., Influence of the thermal treatment on the optical and structural properties of 1.3 mu m emitting LP-MOVPE grown InAs/CaAs quantum dots, OPT MATER, 17(1-2), 2001, pp. 263-266

Authors: Harmand, JC Ungaro, G Ramos, J Rao, EVK Saint-Girons, G Teissier, R Le Roux, G Largeau, L Patriarche, G

Citation: Jc. Harmand et al., Investigations on GaAsSbN/GaAs quantum wells for 1.3-1.55 mu m emission, J CRYST GR, 227, 2001, pp. 553-557

Authors: Sagnes, I Le Roux, G Meriadec, C Mereuta, A Saint-Girons, G Bensoussan, M

Citation: I. Sagnes et al., MOCVD InP/AlGalnAs distributed Bragg reflector for 1.55 mu m VCSELs, ELECTR LETT, 37(8), 2001, pp. 500-501

Authors: Saint-Girons, G Patriarche, G Largeau, L Coelho, J Mereuta, A Moison, JM Gerard, JM Sagnes, I

Citation: G. Saint-girons et al., Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots, APPL PHYS L, 79(14), 2001, pp. 2157-2159

Authors: Saint-Girons, G Mereuta, A Gerard, JM Ramdane, A Sagnes, I

Citation: G. Saint-girons et al., 1.3 mu m electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, andinfluence of the re-growth temperature on the spectral response, MAT SCI E B, 78(2-3), 2000, pp. 145-147