Authors:
Akimov, IA
Sapega, VF
Mirlin, DN
Ustinov, VM
Citation: Ia. Akimov et al., Inelastic scattering of hot electrons in n-CaAs/AlAs types I and II multiple quantum wells doped with silicon, PHYSICA E, 10(4), 2001, pp. 505-510
Authors:
Akimov, IA
Mirlin, DN
Perel', VI
Sapega, VF
Citation: Ia. Akimov et al., Momentum alignment and spin orientation of photoexcited electrons in GaAs in the transition from two- to three-dimensional structures, SEMICONDUCT, 35(6), 2001, pp. 727-733
Authors:
Sapega, VF
Mirlin, DN
Ruf, T
Cardona, M
Winter, W
Eberl, K
Citation: Vf. Sapega et al., Magnetic-field-induced transitions between minibands in GaAs/AlxGa1-xAs superlattices, SEMICONDUCT, 35(4), 2001, pp. 447-450
Citation: Bp. Zakharchenya et Vf. Sapega, Ionization of an exciton moving perpendicular to a magnetic field in the GaAs/AlxGa1-xAs superlattice, JETP LETTER, 74(1), 2001, pp. 32-35
Citation: Vf. Sapega et al., Spin-flip Raman scattering in Mn-doped GaAs: exchange interaction and g factor renormalization, SOL ST COMM, 114(11), 2000, pp. 573-577
Authors:
Sapega, VF
Perel', VI
Mirlin, DN
Akimov, IA
Ruf, T
Cardona, M
Winter, W
Eberl, K
Citation: Vf. Sapega et al., Dimensionality effects in the hot-electron photoluminescence of gallium arsenide: 2D-quasi-3D transition, SEMICONDUCT, 33(6), 1999, pp. 681-683
Authors:
Akimov, IA
Sapega, VF
Mirlin, DN
Zakharchenya, BP
Ustinov, VM
Zhukov, AE
Egorov, AY
Sirenko, AA
Citation: Ia. Akimov et al., Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AlAs quantum wells, SEMICONDUCT, 33(10), 1999, pp. 1124-1127