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Results: 1-15 |
Results: 15
Positive charge increase in plasma deposited oxides induced by low pressure chemical vapor deposition of silicon nitride
Authors: Fay, JL Beluch, J Despax, B Sarrabayrouse, G
Citation: Jl. Fay et al., Positive charge increase in plasma deposited oxides induced by low pressure chemical vapor deposition of silicon nitride, JPN J A P 1, 40(1), 2001, pp. 7-11
MOS ionizing radiation dosimeters: from low to high dose measurement
Authors: Sarrabayrouse, G Polischuk, V
Citation: G. Sarrabayrouse et V. Polischuk, MOS ionizing radiation dosimeters: from low to high dose measurement, RADIAT PH C, 61(3-6), 2001, pp. 511-513
Study of capacitive structures for amplifying the sensitivity of FET-basedchemical sensors
Authors: Temple-Boyer, P Launay, J Hajji, B Sarrabayrouse, G Martinez, A
Citation: P. Temple-boyer et al., Study of capacitive structures for amplifying the sensitivity of FET-basedchemical sensors, SENS ACTU-B, 78(1-3), 2001, pp. 285-290
Feasibility of an isolation by local oxidation of silicon without field implant
Authors: Fay, JL Beluch, J Despax, B Sarrabayrouse, G
Citation: Jl. Fay et al., Feasibility of an isolation by local oxidation of silicon without field implant, SOL ST ELEC, 45(8), 2001, pp. 1257-1263
Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer
Authors: Jalabert, L Temple-Boyer, P Sarrabayrouse, G Cristiano, F Colombeau, B Voillot, F Armand, C
Citation: L. Jalabert et al., Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer, MICROEL REL, 41(7), 2001, pp. 981-985
Reduction of the parasitic charge generation during silicon nitride deposition in a LOCOS isolation without field implant
Authors: Fay, JL Beluch, J Despax, B Bafleur, M Sarrabayrouse, G
Citation: Jl. Fay et al., Reduction of the parasitic charge generation during silicon nitride deposition in a LOCOS isolation without field implant, MICROEL REL, 40(4-5), 2000, pp. 593-596
Relation between residual stress and electrical properties of polysilicon/oxide/silicon structures
Authors: Jalabert, L Temple-Boyer, P Olivie, F Sarrabayrouse, G Cristiano, F Colombeau, B
Citation: L. Jalabert et al., Relation between residual stress and electrical properties of polysilicon/oxide/silicon structures, MICROEL REL, 40(4-5), 2000, pp. 597-600
Hole traps and charges in ion implanted MOS capacitors: sensitivity to ionizing radiation
Authors: Sabate, N Garrido, B Morante, JR Sarrabayrouse, G
Citation: N. Sabate et al., Hole traps and charges in ion implanted MOS capacitors: sensitivity to ionizing radiation, MICROEL REL, 40(4-5), 2000, pp. 803-806
Thermal characterization of LDMOS transistors for accelerating stress testing
Authors: Bosc, JM Dupuy, P Gil, J Dorkel, JM Sarrabayrouse, G
Citation: Jm. Bosc et al., Thermal characterization of LDMOS transistors for accelerating stress testing, MICROELEC J, 31(9-10), 2000, pp. 747-752
Comprehensive analysis of an isolation area obtained by local oxidation ofsilicon without field implant
Authors: Fay, JL Beluch, J Allirand, L Brosset, D Despax, B Bafleur, M Sarrabayrouse, G
Citation: Jl. Fay et al., Comprehensive analysis of an isolation area obtained by local oxidation ofsilicon without field implant, JPN J A P 1, 38(9A), 1999, pp. 5012-5017
Recombination activity in directly bonded high resistivity silicon wafers measured by the photoconductance decay method
Authors: Sarrabayrouse, G Lecerf, P Bielle-Daspet, D
Citation: G. Sarrabayrouse et al., Recombination activity in directly bonded high resistivity silicon wafers measured by the photoconductance decay method, JPN J A P 1, 38(11), 1999, pp. 6181-6183
Ionizing irradiation effect on the current-voltage characteristics of the metal/ultra-thin oxide/semiconductor structures
Authors: Kassmi, K Maimouni, R Sarrabayrouse, G
Citation: K. Kassmi et al., Ionizing irradiation effect on the current-voltage characteristics of the metal/ultra-thin oxide/semiconductor structures, EPJ-APPL PH, 8(2), 1999, pp. 171-178
Special issue - Dielectrics in microelectronics
Authors: Sarrabayrouse, G
Citation: G. Sarrabayrouse, Special issue - Dielectrics in microelectronics, MICROEL REL, 39(2), 1999, pp. 159-159
Breakdown properties of metal NIDOS SiO2/silicon structures
Authors: Temple-Boyer, P Olivie, F Scheid, E Sarrabayrouse, G Alay, JL Morante, JR
Citation: P. Temple-boyer et al., Breakdown properties of metal NIDOS SiO2/silicon structures, MICROEL REL, 39(2), 1999, pp. 187-190
Defect compensation at the interface between directly bonded silicon wafers
Authors: Laporte, A Lescouzeres, L PeyreLavigne, A Sarrabayrouse, G
Citation: A. Laporte et al., Defect compensation at the interface between directly bonded silicon wafers, MATER SCI T, 14(12), 1998, pp. 1299-1302
Risultati: 1-15 |