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Citation: M. Kuranioto et al., Novel ridge-type InGaN multiple-quantum-well laser diodes fabricated by selective area re-growth on n-GaN substrates, JPN J A P 2, 40(9AB), 2001, pp. L925-L927

Authors: Kuramoto, M Yamaguchi, AA Usui, A Sasaoka, C Hisanaga, Y Kimura, A Sunakawa, H Kuroda, N Nido, M Mizuta, M

Citation: M. Kuramoto et al., Towards a durable InGaN MQW LD - Room temperature CW operation of InGaN MQW laser, NEC RES DEV, 41(1), 2000, pp. 74-86

Authors: Kuramoto, M Sasaoka, C Hisanaga, Y Kimura, A Yamaguchi, AA Sunakawa, H Kuroda, N Nido, M Usui, A Mizuta, M

Citation: M. Kuramoto et al., Room-temperature continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact, JPN J A P 2, 38(2B), 1999, pp. L184-L186

Authors: Kuramoto, M Sasaoka, C Hisanaga, Y Kimura, A Yamaguchi, AA Sunakawa, H Kuroda, N Nido, M Usui, A Mizuta, M

Citation: M. Kuramoto et al., Continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact, PHYS ST S-A, 176(1), 1999, pp. 35-38