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Results: 1-11 |
Results: 11
Copper growth on the O-terminated ZnO(000(1)over-bar) surface: Structure and morphology - art. no. 085424
Authors: Jedrecy, N Gallini, S Sauvage-Simkin, M Pinchaux, R
Citation: N. Jedrecy et al., Copper growth on the O-terminated ZnO(000(1)over-bar) surface: Structure and morphology - art. no. 085424, PHYS REV B, 6408(8), 2001, pp. 5424
Geometrical and compositional structure at metal-oxide interfaces: MgO on Fe(001) - art. no. 076102
Authors: Meyerheim, HL Popescu, R Kirschner, J Jedrecy, N Sauvage-Simkin, M Heinrich, B Pinchaux, R
Citation: Hl. Meyerheim et al., Geometrical and compositional structure at metal-oxide interfaces: MgO on Fe(001) - art. no. 076102, PHYS REV L, 8707(7), 2001, pp. 6102
The hexagonal polar ZnO(0001)-(1 x 1) surfaces: structural features as stemming from X-ray diffraction
Authors: Jedrecy, N Sauvage-Simkin, M Pinchaux, R
Citation: N. Jedrecy et al., The hexagonal polar ZnO(0001)-(1 x 1) surfaces: structural features as stemming from X-ray diffraction, APPL SURF S, 162, 2000, pp. 69-73
The ZnO non-polar (1010) surface: an X-ray structural investigation
Authors: Jedrecy, N Gallini, S Sauvage-Simkin, M Pinchaux, R
Citation: N. Jedrecy et al., The ZnO non-polar (1010) surface: an X-ray structural investigation, SURF SCI, 460(1-3), 2000, pp. 136-143
(1x2) Bi chain reconstruction on the InAs(110) surface
Authors: Betti, MG Berselli, D Mariani, C Jedrecy, N Sauvage-Simkin, M Garreau, Y Pinchaux, R
Citation: Mg. Betti et al., (1x2) Bi chain reconstruction on the InAs(110) surface, PHYS REV B, 59(24), 1999, pp. 15760-15765
Atomic structure of the As-rich InAs(100) beta 2(2 x 4) surface
Authors: Gothelid, M Garreau, Y Sauvage-Simkin, M Pinchaux, R Cricenti, A Le Lay, G
Citation: M. Gothelid et al., Atomic structure of the As-rich InAs(100) beta 2(2 x 4) surface, PHYS REV B, 59(23), 1999, pp. 15285-15289
(root 3 x root 3) R30 degrees reconstruction of the 6H-SiC (0001) surface:A simple T4 Si adatom structure solved by grazing-incidence x-ray diffraction
Authors: Coati, A Sauvage-Simkin, M Garreau, Y Pinchaux, R Argunova, T Aid, K
Citation: A. Coati et al., (root 3 x root 3) R30 degrees reconstruction of the 6H-SiC (0001) surface:A simple T4 Si adatom structure solved by grazing-incidence x-ray diffraction, PHYS REV B, 59(19), 1999, pp. 12224-12227
Atomic structure of the (2 x 4) In0.53Ga0.47As/InP(001) reconstructed surface. A study of average strain and growth temperature effects on the indiumsegregation
Authors: Aid, K Garreau, Y Sauvage-Simkin, M Pinchaux, R
Citation: K. Aid et al., Atomic structure of the (2 x 4) In0.53Ga0.47As/InP(001) reconstructed surface. A study of average strain and growth temperature effects on the indiumsegregation, SURF SCI, 425(2-3), 1999, pp. 165-173
X-ray photoelectron spectroscopic investigation of the GaAs nitridation mechanism with an ECR plasma source
Authors: Sauvage-Simkin, M Garreau, Y Barski, A Langer, R Cvetko, D Floreano, L Gotter, R Santaniello, A Verdini, A
Citation: M. Sauvage-simkin et al., X-ray photoelectron spectroscopic investigation of the GaAs nitridation mechanism with an ECR plasma source, PHYS ST S-A, 176(1), 1999, pp. 671-676
Influence of the interface layer on the strain relaxation of ZnSe epitaxial layers grown by MBE on (001)GaAs
Authors: Giannini, C Carlino, E Sciacovelli, P Tapfer, L Sauvage-Simkin, M Garreau, Y Jedrecy, N Veron, MB Pinchaux, R
Citation: C. Giannini et al., Influence of the interface layer on the strain relaxation of ZnSe epitaxial layers grown by MBE on (001)GaAs, J PHYS D, 32(10A), 1999, pp. A51-A55
Stoichiometry and discommensuration on InxGa1-xAs/GaAs(001) reconstructed surfaces: A quantitative x-ray diffuse-scattering study
Authors: Garreau, Y Aid, K Sauvage-Simkin, M Pinchaux, R McConville, CF Jones, TS Sudijono, JL Tok, ES
Citation: Y. Garreau et al., Stoichiometry and discommensuration on InxGa1-xAs/GaAs(001) reconstructed surfaces: A quantitative x-ray diffuse-scattering study, PHYS REV B, 58(24), 1998, pp. 16177-16185
Risultati: 1-11 |