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Results: 1-14 |
Results: 14
Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Poblenz, C Heying, B Fini, P Petroff, PM DenBaars, SP Mishra, UK Speck, JS Saxler, A Elhamrib, S Mitchel, WC
Citation: Cr. Elsass et al., Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, JPN J A P 1, 40(11), 2001, pp. 6235-6238
InAs/InGaSb photodetectors grown on GaAs bonded substrates
Authors: Vilela, MF Anselm, KA Sooriar, N Johnson, JL Lin, CH Brown, GJ Mahalingam, K Saxler, A Szmulowicz, F
Citation: Mf. Vilela et al., InAs/InGaSb photodetectors grown on GaAs bonded substrates, J ELEC MAT, 30(7), 2001, pp. 798-801
High mobility in n-type GaN substrates
Authors: Saxler, A Look, DC Elhamri, S Sizelove, J Mitchel, WC Sung, CM Park, SS Lee, KY
Citation: A. Saxler et al., High mobility in n-type GaN substrates, APPL PHYS L, 78(13), 2001, pp. 1873-1875
Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Smorchkova, IP Ben, HY Haus, E Poblenz, C Fini, P Maranowski, K Petroff, PM DenBaars, SP Mishra, UK Speck, JS Saxler, A Elhamri, S Mitchel, WC
Citation: Cr. Elsass et al., Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, JPN J A P 2, 39(10B), 2000, pp. L1023-L1025
Electrical transport of an AlGaN/GaN two-dimensional electron gas
Authors: Saxler, A Debray, P Perrin, R Elhamri, S Mitchel, WC Elsass, CR Smorchkova, LP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: A. Saxler et al., Electrical transport of an AlGaN/GaN two-dimensional electron gas, MRS I J N S, 5, 2000, pp. NIL_532-NIL_537
Type-II superlattice photodetector on a compliant GaAs substrate
Authors: Brown, GJ Szmulowicz, F Linville, R Saxler, A Mahalingham, K Lin, CH Kuo, CH Hwang, WY
Citation: Gj. Brown et al., Type-II superlattice photodetector on a compliant GaAs substrate, IEEE PHOTON, 12(6), 2000, pp. 684-686
Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure
Authors: Elhamri, S Saxler, A Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: S. Elhamri et al., Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure, J APPL PHYS, 88(11), 2000, pp. 6583-6588
Heavy doping effects in Mg-doped GaN
Authors: Kozodoy, P Xing, HL DenBaars, SP Mishra, UK Saxler, A Perrin, R Elhamri, S Mitchel, WC
Citation: P. Kozodoy et al., Heavy doping effects in Mg-doped GaN, J APPL PHYS, 87(4), 2000, pp. 1832-1835
Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygenin n-type GaN thin solid films grown by gas-source molecular beam epitaxy
Authors: Van Nostrand, JE Solomon, J Saxler, A Xie, QH Reynolds, DC Look, DC
Citation: Je. Van Nostrand et al., Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygenin n-type GaN thin solid films grown by gas-source molecular beam epitaxy, J APPL PHYS, 87(12), 2000, pp. 8766-8772
Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide
Authors: Capano, MA Cooper, JA Melloch, MR Saxler, A Mitchel, WC
Citation: Ma. Capano et al., Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide, J APPL PHYS, 87(12), 2000, pp. 8773-8777
Characterization of an AlGaN/GaN two-dimensional electron gas structure
Authors: Saxler, A Debray, P Perrin, R Elhamri, S Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: A. Saxler et al., Characterization of an AlGaN/GaN two-dimensional electron gas structure, J APPL PHYS, 87(1), 2000, pp. 369-374
Fermi level control and deep levels in semi-insulating 4H-SiC
Authors: Mitchel, WC Perrin, R Goldstein, J Saxler, A Roth, M Smith, SR Solomon, JS Evwaraye, AO
Citation: Wc. Mitchel et al., Fermi level control and deep levels in semi-insulating 4H-SiC, J APPL PHYS, 86(9), 1999, pp. 5040-5044
Phase-matched optical second-harmonic generation in GaN and AlN slab waveguides
Authors: Hahn, DN Kiehne, GT Ketterson, JB Wong, GKL Kung, P Saxler, A Razeghi, M
Citation: Dn. Hahn et al., Phase-matched optical second-harmonic generation in GaN and AlN slab waveguides, J APPL PHYS, 85(5), 1999, pp. 2497-2501
Aluminum gallium nitride short-period superlattices doped with magnesium
Authors: Saxler, A Mitchel, WC Kung, P Razeghi, M
Citation: A. Saxler et al., Aluminum gallium nitride short-period superlattices doped with magnesium, APPL PHYS L, 74(14), 1999, pp. 2023-2025
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