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Results: 1-25 | 26-27
Results: 1-25/27
35 mu m cutoff bound-to-quasibound and bound-to-continuum InGaAs QWIPs
Authors: Perera, AGU Matsik, SG Liu, HC Gao, M Buchanan, M Schaff, WJ Yeo, W
Citation: Agu. Perera et al., 35 mu m cutoff bound-to-quasibound and bound-to-continuum InGaAs QWIPs, INFR PHYS T, 42(3-5), 2001, pp. 157-162
Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures
Authors: Bradley, ST Young, AP Brillson, LJ Murphy, MJ Schaff, WJ
Citation: St. Bradley et al., Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures, J ELEC MAT, 30(3), 2001, pp. 123-128
Low energy electron-excited nano-luminescence spectroscopy of GaN surfacesand interfaces
Authors: Brillson, LJ Young, AP Jessen, GH Levin, TM Bradley, ST Goss, SH Bae, J Ponce, FA Murphy, MJ Schaff, WJ Eastman, LF
Citation: Lj. Brillson et al., Low energy electron-excited nano-luminescence spectroscopy of GaN surfacesand interfaces, APPL SURF S, 175, 2001, pp. 442-449
Spontaneous oscillations and triggered pulsing in GaAs/InGaAs multiquantumwell structures
Authors: Perera, AGU Matsik, SG Letov, VY Liu, HC Gao, M Buchanan, M Schaff, WJ
Citation: Agu. Perera et al., Spontaneous oscillations and triggered pulsing in GaAs/InGaAs multiquantumwell structures, SOL ST ELEC, 45(7), 2001, pp. 1121-1125
Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrareddetector applications
Authors: Korotkov, AL Perera, AGU Shen, WZ Herfort, J Ploog, KH Schaff, WJ Liu, HC
Citation: Al. Korotkov et al., Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrareddetector applications, J APPL PHYS, 89(6), 2001, pp. 3295-3300
Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement
Authors: Bradley, ST Young, AP Brillson, LJ Murphy, MJ Schaff, WJ Eastman, LF
Citation: St. Bradley et al., Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement, IEEE DEVICE, 48(3), 2001, pp. 412-415
Undoped AlGaN/GaN HEMTs for microwave power amplification
Authors: Eastman, LF Tilak, V Smart, J Green, BM Chumbes, EM Dimitrov, R Kim, H Ambacher, OS Weimann, N Prunty, T Murphy, M Schaff, WJ Shealy, JR
Citation: Lf. Eastman et al., Undoped AlGaN/GaN HEMTs for microwave power amplification, IEEE DEVICE, 48(3), 2001, pp. 479-485
Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
Authors: Lu, H Schaff, WJ Hwang, J Wu, H Koley, G Eastman, LF
Citation: H. Lu et al., Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy, APPL PHYS L, 79(10), 2001, pp. 1489-1491
Evidence from EELS of oxygen in the nucleation layer of a MBE grown III-NHEMT
Authors: Eustis, TJ Silcox, J Murphy, MJ Schaff, WJ
Citation: Tj. Eustis et al., Evidence from EELS of oxygen in the nucleation layer of a MBE grown III-NHEMT, MRS I J N S, 5, 2000, pp. NIL_167-NIL_172
Depth-resolved spectroscopy of interface defects in AlGaN/GaN heterostructure field effect transistors device structures
Authors: Young, AP Bae, J Brillson, LJ Murphy, MJ Schaff, WJ
Citation: Ap. Young et al., Depth-resolved spectroscopy of interface defects in AlGaN/GaN heterostructure field effect transistors device structures, J VAC SCI B, 18(4), 2000, pp. 2309-2312
GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors
Authors: Perera, AGU Shen, WZ Liu, HC Buchanan, M Schaff, WJ
Citation: Agu. Perera et al., GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors, MAT SCI E B, 74(1-3), 2000, pp. 56-60
Effect of interface states on the performance of GaAs p(+)-i far-infrared detectors
Authors: Perera, AGU Shen, WZ Ershov, M Liu, HC Buchanan, M Gunapala, SD Bandara, SV Liu, JK Ye, HH Schaff, WJ
Citation: Agu. Perera et al., Effect of interface states on the performance of GaAs p(+)-i far-infrared detectors, J VAC SCI A, 18(2), 2000, pp. 597-600
GaN/SiC heterojunction bipolar transistors
Authors: Schaff, WJ Wu, H Praharaj, CJ Murphy, M Eustis, T Foutz, B Ambacher, O Eastman, LF
Citation: Wj. Schaff et al., GaN/SiC heterojunction bipolar transistors, SOL ST ELEC, 44(2), 2000, pp. 259-264
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Authors: Ambacher, O Foutz, B Smart, J Shealy, JR Weimann, NG Chu, K Murphy, M Sierakowski, AJ Schaff, WJ Eastman, LF Dimitrov, R Mitchell, A Stutzmann, M
Citation: O. Ambacher et al., Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures, J APPL PHYS, 87(1), 2000, pp. 334-344
GaAs/InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 mu m
Authors: Perera, AGU Matsik, SG Liu, HC Gao, M Buchanan, M Schaff, WJ Yeo, W
Citation: Agu. Perera et al., GaAs/InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 mu m, APPL PHYS L, 77(5), 2000, pp. 741-743
Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1 degrees towards < 211 > InP substrates
Authors: Yeo, W Dimitrov, R Schaff, WJ Eastman, LF
Citation: W. Yeo et al., Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1 degrees towards < 211 > InP substrates, APPL PHYS L, 77(26), 2000, pp. 4292-4294
The effect of As-4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates
Authors: Yeo, W Dimitrov, R Schaff, WJ Eastman, LF
Citation: W. Yeo et al., The effect of As-4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates, APPL PHYS L, 77(17), 2000, pp. 2764-2766
Improvement on epitaxial grown of InN by migration enhanced epitaxy
Authors: Lu, H Schaff, WJ Hwang, J Wu, H Yeo, W Pharkya, A Eastman, LF
Citation: H. Lu et al., Improvement on epitaxial grown of InN by migration enhanced epitaxy, APPL PHYS L, 77(16), 2000, pp. 2548-2550
Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructurefield-effect transistors
Authors: Garrido, JA Foutz, BE Smart, JA Shealy, JR Murphy, MJ Schaff, WJ Eastman, LF Munoz, E
Citation: Ja. Garrido et al., Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructurefield-effect transistors, APPL PHYS L, 76(23), 2000, pp. 3442-3444
Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN GaN based heterostructures
Authors: Murphy, MJ Chu, K Wu, H Yeo, W Schaff, WJ Ambacher, O Smart, J Shealy, JR Eastman, LF Eustis, TJ
Citation: Mj. Murphy et al., Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN GaN based heterostructures, J VAC SCI B, 17(3), 1999, pp. 1252-1254
Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices
Authors: Ambacher, O Dimitrov, R Stutzmann, M Foutz, BE Murphy, MJ Smart, JA Shealy, JR Weimann, NG Chu, K Chumbes, M Green, B Sierakowski, AJ Schaff, WJ Eastman, LF
Citation: O. Ambacher et al., Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices, PHYS ST S-B, 216(1), 1999, pp. 381-389
Observation of a discontinuous red-shift in the emission spectrum of a two-dimensional electron gas
Authors: Lee, XY Jiang, HW Kim, Y Schaff, WJ
Citation: Xy. Lee et al., Observation of a discontinuous red-shift in the emission spectrum of a two-dimensional electron gas, SOL ST COMM, 113(2), 1999, pp. 63-67
Topological phase diagram of a two-subband electron system
Authors: Lee, XY Jiang, HW Schaff, WJ
Citation: Xy. Lee et al., Topological phase diagram of a two-subband electron system, PHYS REV L, 83(18), 1999, pp. 3701-3704
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Authors: Ambacher, O Smart, J Shealy, JR Weimann, NG Chu, K Murphy, M Schaff, WJ Eastman, LF Dimitrov, R Wittmer, L Stutzmann, M Rieger, W Hilsenbeck, J
Citation: O. Ambacher et al., Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, J APPL PHYS, 85(6), 1999, pp. 3222-3233
High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy
Authors: Murphy, MJ Chu, K Wu, H Yeo, W Schaff, WJ Ambacher, O Eastman, LF Eustis, TJ Silcox, J Dimitrov, R Stutzmann, M
Citation: Mj. Murphy et al., High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 75(23), 1999, pp. 3653-3655
Risultati: 1-25 | 26-27