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Authors:
Koitzsch, C
Conrad, D
Scheerschmidt, K
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Maslarski, P
Pezoldt, J
Citation: C. Koitzsch et al., Carbon-induced reconstructions on Si(111) investigated by RHEED and molecular dynamics, APPL SURF S, 179(1-4), 2001, pp. 49-54
Authors:
Scheerschmidt, K
Conrad, D
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Timpel, D
Citation: K. Scheerschmidt et al., Enhanced semi-empirical potentials in molecular dynamics simulations of wafer bonding, MAT SC S PR, 3(1-2), 2000, pp. 129-135
Authors:
Scheerschmidt, K
Conrad, D
Kirmse, H
Schneider, R
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Citation: K. Scheerschmidt et al., Electron microscope characterization of CdSe/ZnSe quantum dots based on molecular dynamics structure relaxations, ULTRAMICROS, 81(3-4), 2000, pp. 289-300
Authors:
Koitzsch, C
Conrad, D
Scheerschmidt, K
Gosele, U
Citation: C. Koitzsch et al., Empirical molecular dynamic study of SiC(0001) surface reconstructions andbonded interfaces, J APPL PHYS, 88(12), 2000, pp. 7104-7109
Citation: Ay. Belov et al., Dissociation of screw dislocations in (001) low-angle twist boundaries: a source of the 30 degrees partial dislocations in silicon, PHIL MAG L, 79(8), 1999, pp. 531-538
Citation: Ay. Belov et K. Scheerschmidt, Atomic structures of dislocation intersections at (001) low-angle twist and shear boundaries in silicon, PHIL MAG L, 79(3), 1999, pp. 107-114
Citation: Ay. Belov et al., Extended point defect structures at intersections of screw dislocations inSi: A molecular dynamics study, PHYS ST S-A, 171(1), 1999, pp. 159-166