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Results: 1-14 |
Results: 14
Tight-binding-based empirical potentials: Molecular dynamics of wafer bonding
Authors: Scheerschmidt, K Conrad, D Wang, YC
Citation: K. Scheerschmidt et al., Tight-binding-based empirical potentials: Molecular dynamics of wafer bonding, COMP MAT SC, 22(1-2), 2001, pp. 56-61
Carbon-induced reconstructions on Si(111) investigated by RHEED and molecular dynamics
Authors: Koitzsch, C Conrad, D Scheerschmidt, K Scharmann, F Maslarski, P Pezoldt, J
Citation: C. Koitzsch et al., Carbon-induced reconstructions on Si(111) investigated by RHEED and molecular dynamics, APPL SURF S, 179(1-4), 2001, pp. 49-54
Enhanced semi-empirical potentials in molecular dynamics simulations of wafer bonding
Authors: Scheerschmidt, K Conrad, D Belov, A Timpel, D
Citation: K. Scheerschmidt et al., Enhanced semi-empirical potentials in molecular dynamics simulations of wafer bonding, MAT SC S PR, 3(1-2), 2000, pp. 129-135
Computer-aided analysis of TEM images of CdSe/ZnSe quantum dots
Authors: Kirmse, H Neumann, W Wiebach, T Kohler, R Scheerschmidt, K Conrad, D
Citation: H. Kirmse et al., Computer-aided analysis of TEM images of CdSe/ZnSe quantum dots, MAT SCI E B, 69, 2000, pp. 361-366
Electron microscope characterization of CdSe/ZnSe quantum dots based on molecular dynamics structure relaxations
Authors: Scheerschmidt, K Conrad, D Kirmse, H Schneider, R Neumann, W
Citation: K. Scheerschmidt et al., Electron microscope characterization of CdSe/ZnSe quantum dots based on molecular dynamics structure relaxations, ULTRAMICROS, 81(3-4), 2000, pp. 289-300
Quantum dot structures in the InGaAs system investigated by TEM techniques
Authors: Werner, P Scheerschmidt, K Zakharov, ND Hillebrand, R Grundmann, M Schneider, R
Citation: P. Werner et al., Quantum dot structures in the InGaAs system investigated by TEM techniques, CRYST RES T, 35(6-7), 2000, pp. 759-768
Theoretical investigations of bond properties in graphite and graphitic silicon
Authors: Wang, YC Scheerschmidt, K Gosele, U
Citation: Yc. Wang et al., Theoretical investigations of bond properties in graphite and graphitic silicon, PHYS REV B, 61(19), 2000, pp. 12864-12870
Empirical molecular dynamic study of SiC(0001) surface reconstructions andbonded interfaces
Authors: Koitzsch, C Conrad, D Scheerschmidt, K Gosele, U
Citation: C. Koitzsch et al., Empirical molecular dynamic study of SiC(0001) surface reconstructions andbonded interfaces, J APPL PHYS, 88(12), 2000, pp. 7104-7109
On the possibility of diamond wafer bonding in ultrahigh vacuum
Authors: Conrad, D Scheerschmidt, K Gosele, U
Citation: D. Conrad et al., On the possibility of diamond wafer bonding in ultrahigh vacuum, APPL PHYS L, 77(1), 2000, pp. 49-51
Dissociation of screw dislocations in (001) low-angle twist boundaries: a source of the 30 degrees partial dislocations in silicon
Authors: Belov, AY Scholz, R Scheerschmidt, K
Citation: Ay. Belov et al., Dissociation of screw dislocations in (001) low-angle twist boundaries: a source of the 30 degrees partial dislocations in silicon, PHIL MAG L, 79(8), 1999, pp. 531-538
Atomic structures of dislocation intersections at (001) low-angle twist and shear boundaries in silicon
Authors: Belov, AY Scheerschmidt, K
Citation: Ay. Belov et K. Scheerschmidt, Atomic structures of dislocation intersections at (001) low-angle twist and shear boundaries in silicon, PHIL MAG L, 79(3), 1999, pp. 107-114
Extended point defect structures at intersections of screw dislocations inSi: A molecular dynamics study
Authors: Belov, AY Scheerschmidt, K Gosele, U
Citation: Ay. Belov et al., Extended point defect structures at intersections of screw dislocations inSi: A molecular dynamics study, PHYS ST S-A, 171(1), 1999, pp. 159-166
TEM characterization of self-organized CdSe/ZnSe quantum dots
Authors: Kirmse, H Schneider, R Scheerschmidt, K Conrad, D Neumann, W
Citation: H. Kirmse et al., TEM characterization of self-organized CdSe/ZnSe quantum dots, J MICROSC O, 194, 1999, pp. 183-191
Molecular dynamics studies of silica wafer bonding
Authors: Timpel, D Schaible, M Scheerschmidt, K
Citation: D. Timpel et al., Molecular dynamics studies of silica wafer bonding, J APPL PHYS, 85(5), 1999, pp. 2627-2635
Risultati: 1-14 |