Authors: McKay, HA Feenstra, RM Schmidtling, T Pohl, UW Geisz, JF

Citation: Ha. Mckay et al., Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy, J VAC SCI B, 19(4), 2001, pp. 1644-1649

Authors: McKay, HA Feenstra, RM Schmidtling, T Pohl, UW

Citation: Ha. Mckay et al., Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy, APPL PHYS L, 78(1), 2001, pp. 82-84

Authors: Schmidtling, T Klein, M Pohl, UW Richter, W

Citation: T. Schmidtling et al., Metal organic vapor phase epitaxy of GaAsN/GaAs quantum wells using tertiarybutylhydrazine, MRS I J N S, 5, 2000, pp. NIL_197-NIL_203

Authors: Peters, S Schmidtling, T Trepk, T Pohl, UW Zettler, JT Richter, W

Citation: S. Peters et al., In situ monitoring of GaN metal-organic vapor phase epitaxy by spectroscopic ellipsometry, J APPL PHYS, 88(7), 2000, pp. 4085-4090

Authors: Pristovsek, M Menhal, H Schmidtling, T Esser, N Richter, W

Citation: M. Pristovsek et al., Comparative study of the GaAs (113), (115), (001), ((1)over-bar(1)over-bar(5)over-bar), ((1)over-bar(1)over-bar(3)over-bar), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy, MICROELEC J, 30(4-5), 1999, pp. 449-453

Authors: Pristovsek, M Menhal, H Wehnert, T Zettler, JT Schmidtling, T Esser, N Richter, W Setzer, C Platen, J Jacobi, K

Citation: M. Pristovsek et al., Reconstructions of the GaAs (1 1 3) surface, J CRYST GR, 195(1-4), 1998, pp. 1-5