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Results: 1-14 |
Results: 14
Ion beam studies of silicon oxidation and oxynitridation
Authors: Schulte, WH Gustafsson, T Garfunkel, E Baumvol, IJR Gusev, EP
Citation: Wh. Schulte et al., Ion beam studies of silicon oxidation and oxynitridation, SPR S MAT S, 46, 2001, pp. 161-191
Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon
Authors: Chambers, JJ Busch, BW Schulte, WH Gustafsson, T Garfunkel, E Wang, S Maher, DM Klein, TM Parsons, GN
Citation: Jj. Chambers et al., Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon, APPL SURF S, 181(1-2), 2001, pp. 78-93
Limitations to depth resolution in ion scattering experiments
Authors: Schulte, WH Busch, BW Garfunkel, E Gustafsson, T Schiwietz, G Grande, PL
Citation: Wh. Schulte et al., Limitations to depth resolution in ion scattering experiments, NUCL INST B, 183(1-2), 2001, pp. 16-24
Layer-resolved depth profiling at single crystal surfaces
Authors: Busch, BW Schulte, WH Gustafsson, T Uebing, C
Citation: Bw. Busch et al., Layer-resolved depth profiling at single crystal surfaces, NUCL INST B, 183(1-2), 2001, pp. 88-96
High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering
Authors: Gustafsson, T Lu, HC Busch, BW Schulte, WH Garfunkel, E
Citation: T. Gustafsson et al., High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering, NUCL INST B, 183(1-2), 2001, pp. 146-153
Interface reactions of high-kappa Y2O3 gate oxides with Si
Authors: Busch, BW Kwo, J Hong, M Mannaerts, JP Sapjeta, BJ Schulte, WH Garfunkel, E Gustafsson, T
Citation: Bw. Busch et al., Interface reactions of high-kappa Y2O3 gate oxides with Si, APPL PHYS L, 79(15), 2001, pp. 2447-2449
The Al-27(p, gamma)Si-28 reaction: direct capture cross-section and resonance strengths at E-p=0.2-1.12 MeV
Authors: Harissopulos, S Chronidou, C Spyrou, K Paradellis, T Rolfs, C Schulte, WH Becker, HW
Citation: S. Harissopulos et al., The Al-27(p, gamma)Si-28 reaction: direct capture cross-section and resonance strengths at E-p=0.2-1.12 MeV, EUR PHY J A, 9(4), 2000, pp. 479-489
Cross section and resonance strength measurements of F-19(p,alpha gamma)O-16 at E-p=200-800 keV
Authors: Spyrou, K Chronidou, C Harissopulos, S Kossionides, S Paradellis, T Rolfs, C Schulte, WH Borucki, L
Citation: K. Spyrou et al., Cross section and resonance strength measurements of F-19(p,alpha gamma)O-16 at E-p=200-800 keV, EUR PHY J A, 7(1), 2000, pp. 79-85
Oxygen exchange and transport in thin zirconia films on Si(100)
Authors: Busch, BW Schulte, WH Garfunkel, E Gustafsson, T Qi, W Nieh, R Lee, J
Citation: Bw. Busch et al., Oxygen exchange and transport in thin zirconia films on Si(100), PHYS REV B, 62(20), 2000, pp. R13290-R13293
Hydrogen Doppler spectroscopy using N-15 ions
Authors: Borucki, L Becker, HW Gorris, F Kubsky, S Schulte, WH Rolfs, C
Citation: L. Borucki et al., Hydrogen Doppler spectroscopy using N-15 ions, EUR PHY J A, 5(3), 1999, pp. 327-336
Production of short ion pulses for TOF-RBS
Authors: Piel, N Becker, HW Meijer, J Schulte, WH Rolfs, C
Citation: N. Piel et al., Production of short ion pulses for TOF-RBS, NUCL INST A, 437(2-3), 1999, pp. 521-530
Interconnected UHV facilities for materials preparation and analysis
Authors: Kubsky, S Borucki, L Gorris, F Becker, HW Rolfs, C Schulte, WH Baumvol, IJR Stedile, FC
Citation: S. Kubsky et al., Interconnected UHV facilities for materials preparation and analysis, NUCL INST A, 435(3), 1999, pp. 514-522
Isotopic substitution of Si during thermal growth of ultrathin silicon-oxide films on Si(111) in O-2
Authors: Baumvol, IJR Krug, C Stedile, FC Gorris, F Schulte, WH
Citation: Ijr. Baumvol et al., Isotopic substitution of Si during thermal growth of ultrathin silicon-oxide films on Si(111) in O-2, PHYS REV B, 60(3), 1999, pp. 1492-1495
Production of thin epitaxial films using ion beam deposition
Authors: Gorris, F Krug, C Kubsky, S Baumvol, IJR Schulte, WH Rolfs, C
Citation: F. Gorris et al., Production of thin epitaxial films using ion beam deposition, PHYS ST S-A, 173(1), 1999, pp. 167-173
Risultati: 1-14 |