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Results:
1-9
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Results: 9
Authors:
Zelmon, DE
Hanning, EA
Schunemann, PG
Citation: De. Zelmon et al., Refractive-index measurements and Sellmeier coefficients for zinc germanium phosphide from 2 to 9 mu m with implications for phase matching in optical frequency-conversion devices, J OPT SOC B, 18(9), 2001, pp. 1307-1310
Authors:
Schunemann, PG
Setzler, SD
Pollak, TM
Ptak, AJ
Myers, TH
Citation: Pg. Schunemann et al., Defect segregation in CdGeAs2, J CRYST GR, 225(2-4), 2001, pp. 440-444
Authors:
Schunemann, PG
Setzler, SD
Pollak, TM
Ohmer, MC
Goldstein, JT
Zelmon, DE
Citation: Pg. Schunemann et al., Crystal growth and properties of AgGaTe2, J CRYST GR, 211(1-4), 2000, pp. 242-246
Authors:
Schunemann, PG
Setzler, SD
Pollak, TM
Citation: Pg. Schunemann et al., Phase-matched crystal growth of AgGaSe2 and AgGa1-xInxSe2, J CRYST GR, 211(1-4), 2000, pp. 257-264
Authors:
Rud', VY
Rud', YV
Ohmer, MC
Schunemann, PG
Citation: Vy. Rud' et al., Production and properties of In/HgGa2S4 Schottky barriers, SEMICONDUCT, 33(10), 1999, pp. 1108-1110
Authors:
Nostrand, MC
Page, RH
Payne, SA
Krupke, WF
Schunemann, PG
Citation: Mc. Nostrand et al., Room-temperature laser action at 4.3-4.4 mu m in CaGa2S4 : Dy3+, OPTICS LETT, 24(17), 1999, pp. 1215-1217
Authors:
Setzler, SD
Schunemann, PG
Pollak, TM
Ohmer, MC
Goldstein, JT
Hopkins, FK
Stevens, KT
Halliburton, LE
Giles, NC
Citation: Sd. Setzler et al., Characterization of defect-related optical absorption in ZnGeP2, J APPL PHYS, 86(12), 1999, pp. 6677-6681
Authors:
Ohmer, MC
Goldstein, JT
Zelmon, DE
Saxler, AW
Hegde, SM
Wolf, JD
Schunemann, PG
Pollak, TM
Citation: Mc. Ohmer et al., Infrared properties of AgGaTe2, a nonlinear optical chalcopyrite semiconductor, J APPL PHYS, 86(1), 1999, pp. 94-99
Authors:
Setzler, SD
Giles, NC
Halliburton, LE
Schunemann, PG
Pollak, TM
Citation: Sd. Setzler et al., Electron paramagnetic resonance of a cation antisite defect in ZnGeP2, APPL PHYS L, 74(9), 1999, pp. 1218-1220
Risultati:
1-9
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