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Results:
1-14
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Results: 14
Authors:
Seol, KS
Tsutatani, Y
Fujimoto, T
Okada, Y
Takeuchi, K
Nagamoto, H
Citation: Ks. Seol et al., New in situ measurement method for nanoparticles formed in a radio frequency plasma-enhanced chemical vapor deposition reactor, J VAC SCI B, 19(5), 2001, pp. 1998-2000
Authors:
Kato, H
Masuzawa, A
Noma, T
Seol, KS
Ohki, Y
Citation: H. Kato et al., Thermally induced photoluminescence quenching centre in hydrogenated amorphous silicon oxynitride, J PHYS-COND, 13(30), 2001, pp. 6541-6549
Authors:
Seol, KS
Hiramatsu, H
Ohki, Y
Choi, IH
Kim, YT
Citation: Ks. Seol et al., Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films, J MATER RES, 16(7), 2001, pp. 1883-1886
Authors:
Kato, H
Masuzawa, A
Sato, H
Noma, T
Seol, KS
Fujimaki, M
Ohki, Y
Citation: H. Kato et al., Visible electroluminescence in hydrogenated amorphous silicon oxynitride, J APPL PHYS, 90(5), 2001, pp. 2216-2220
Authors:
Noma, T
Seol, KS
Kato, H
Fujimaki, M
Ohki, Y
Citation: T. Noma et al., Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride, APPL PHYS L, 79(13), 2001, pp. 1995-1997
Authors:
Noma, T
Seol, KS
Fujimaki, M
Kato, H
Watanabe, T
Ohki, Y
Citation: T. Noma et al., Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films, JPN J A P 1, 39(12A), 2000, pp. 6587-6593
Authors:
Seol, KS
Watanabe, T
Fujimaki, M
Kato, H
Ohki, Y
Takiyama, M
Citation: Ks. Seol et al., Time-resolved photoluminescence study of hydrogenated amorphous silicon nitride, PHYS REV B, 62(3), 2000, pp. 1532-1535
A differential mobility analyzer and a Faraday cup electrometer for operation at 200-930 Pa pressure
Authors:
Seol, KS
Tsutatani, Y
Camata, RP
Yabumoto, J
Isomura, S
Okada, Y
Okuyama, K
Takeuchi, K
Citation: Ks. Seol et al., A differential mobility analyzer and a Faraday cup electrometer for operation at 200-930 Pa pressure, J AEROS SCI, 31(12), 2000, pp. 1389-1395
Authors:
Kato, H
Seol, KS
Fujimaki, M
Toyoda, T
Ohki, Y
Takiyama, M
Citation: H. Kato et al., Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low-pressure chemical vapor deposition, JPN J A P 1, 38(12A), 1999, pp. 6791-6796
Authors:
Fujimaki, M
Kasahara, T
Shimoto, S
Miyazaki, N
Tokuhiro, S
Seol, KS
Ohki, Y
Citation: M. Fujimaki et al., Structural changes induced by KrF excimer laser photons in H-2-loaded Ge-doped SiO2 glass, PHYS REV B, 60(7), 1999, pp. 4682-4687
Authors:
Seol, KS
Fujimaki, M
Ohki, Y
Nishikawa, H
Citation: Ks. Seol et al., Temperature dependence of the lifetime of 4.3-eV photoluminescence in oxygen-deficient amorphous SiO2, PHYS REV B, 59(3), 1999, pp. 1590-1593
Authors:
Fujimaki, M
Shimoto, S
Miyazaki, N
Ohki, Y
Seol, KS
Imamura, K
Citation: M. Fujimaki et al., Effect of annealing on Ge-doped SiO2 thin films, J APPL PHYS, 86(9), 1999, pp. 5270-5273
Authors:
Seol, KS
Futami, T
Watanabe, T
Ohki, Y
Takiyama, M
Citation: Ks. Seol et al., Effects of ion implantation and thermal annealing on the photoluminescencein amorphous silicon nitride, J APPL PHYS, 85(9), 1999, pp. 6746-6750
Authors:
Noma, T
Seol, KS
Fujimaki, M
Ohki, Y
Citation: T. Noma et al., Direct deposition of a blanket tungsten layer on SiO2 by preexposure of helium plasma, J APPL PHYS, 85(12), 1999, pp. 8423-8426
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