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Results: 1-11 |
Results: 11
Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy
Authors: Wang, CX Chung, HYA Seyboth, M Kamp, M Ebeling, KJ Beccard, R Heuken, M
Citation: Cx. Wang et al., Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy, J CRYST GR, 230(3-4), 2001, pp. 377-380
Multiple-step annealing for 50% enhanced p-conductivity of GaN
Authors: Chung, HYA Pelzmann, A Drechsler, M Scherer, M Schwegler, V Seyboth, M Kirchner, C Kamp, M
Citation: Hya. Chung et al., Multiple-step annealing for 50% enhanced p-conductivity of GaN, J CRYST GR, 230(3-4), 2001, pp. 549-553
Characterization of etched facets for GaN-based lasers
Authors: Scherer, M Schwegler, V Seyboth, M Eberhard, F Kirchner, C Kamp, M Ulu, G Unlu, MS Gruhler, R Hollricher, O
Citation: M. Scherer et al., Characterization of etched facets for GaN-based lasers, J CRYST GR, 230(3-4), 2001, pp. 554-557
Low resistive p-type GaN using two-step rapid thermal annealing processes
Authors: Scherer, M Schwegler, V Seyboth, M Kirchner, C Kamp, M Pelzmann, A Drechsler, M
Citation: M. Scherer et al., Low resistive p-type GaN using two-step rapid thermal annealing processes, J APPL PHYS, 89(12), 2001, pp. 8339-8341
First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide
Authors: Rotter, T Mistele, D Stemmer, J Seyboth, M Schwegler, V Paprotta, S Fedler, F Klausing, H Semchinova, OK Aderhold, J Graul, J
Citation: T. Rotter et al., First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide, ELECTR LETT, 37(11), 2001, pp. 715-716
Spatially resolved electroluminescence of InGaN-MQW-LEDs
Authors: Schwegler, V Seyboth, M Kirchner, C Scherer, M Kamp, M Fischer, P Christen, J Zacharias, M
Citation: V. Schwegler et al., Spatially resolved electroluminescence of InGaN-MQW-LEDs, MRS I J N S, 5, 2000, pp. NIL_23-NIL_27
Temperature distribution in InGaN-MQW LEDs under operation
Authors: Schwegler, V Seyboth, M Schad, S Scherer, M Kirchner, C Kamp, M Stempfle, U Limmer, W Sauer, R
Citation: V. Schwegler et al., Temperature distribution in InGaN-MQW LEDs under operation, MRS I J N S, 5, 2000, pp. NIL_556-NIL_561
Argon plasma etching of gallium nitride: spectroscopic surprises
Authors: Brown, SA Reeves, RJ Rong, B Cheung, R Seyboth, M Kirchner, C Kamp, M
Citation: Sa. Brown et al., Argon plasma etching of gallium nitride: spectroscopic surprises, NANOTECHNOL, 11(4), 2000, pp. 263-269
Hydride vapour phase epitaxy growth of GaN layers under reduced reactor pressure
Authors: Chung, HYA Wang, C Kirchner, C Seyboth, M Schwegler, V Scherer, M Kamp, M Ebeling, KJE Beccard, R Heuken, M
Citation: Hya. Chung et al., Hydride vapour phase epitaxy growth of GaN layers under reduced reactor pressure, PHYS ST S-A, 180(1), 2000, pp. 257-260
GaN/SiC quasi-substrates for GaN-based LEDs
Authors: Schwegler, V Kirchner, C Seyboth, M Kamp, M Ebeling, KJ Melnik, YV Nikolaev, AE Tsvetkov, D Dmitriev, VA
Citation: V. Schwegler et al., GaN/SiC quasi-substrates for GaN-based LEDs, PHYS ST S-A, 176(1), 1999, pp. 99-102
Ohmic heating of InGaN LEDs during operation: Determination of the junction temperature and its influence on device performance
Authors: Schwegler, V Schad, SS Kirchner, C Seyboth, M Kamp, M Ebeling, KJ Kudryashov, VE Turkin, AN Yunovich, AE Stempfle, U Link, A Limmer, W Sauer, R
Citation: V. Schwegler et al., Ohmic heating of InGaN LEDs during operation: Determination of the junction temperature and its influence on device performance, PHYS ST S-A, 176(1), 1999, pp. 783-786
Risultati: 1-11 |