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Results: 1-25/80
Authors:
Simin, G
Hu, XH
Tarakji, A
Zhang, JP
Koudymov, A
Saygi, S
Yang, JW
Khan, A
Shur, MS
Gaska, R
Citation: G. Simin et al., AlGaN/InGaN/GaN double heterostructure field-effect transistor, JPN J A P 2, 40(11A), 2001, pp. L1142-L1144
Authors:
Zukauskas, A
Shur, MS
Gaska, R
Citation: A. Zukauskas et al., Light-emitting diodes: Progress in solid-state lighting, MRS BULL, 26(10), 2001, pp. 764-769
Authors:
Karmalkar, S
Deng, JY
Shur, MS
Gaska, R
Citation: S. Karmalkar et al., RESURF AlGaN/GaN HEMT for high voltage power switching, IEEE ELEC D, 22(8), 2001, pp. 373-375
Authors:
Simin, G
Hu, X
Ilinskaya, N
Zhang, J
Tarakji, A
Kumar, A
Yang, J
Khan, MA
Gaska, R
Shur, MS
Citation: G. Simin et al., Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging, IEEE ELEC D, 22(2), 2001, pp. 53-55
Authors:
Borovitskaya, E
Shur, MS
Citation: E. Borovitskaya et Ms. Shur, On theory of 1/f noise in semiconductors, SOL ST ELEC, 45(7), 2001, pp. 1067-1069
Authors:
O'Leary, SK
Foutz, BE
Shur, MS
Eastman, LF
Citation: Sk. O'Leary et al., Polar optical phonon instability and intervalley transfer in III-V semiconductors, SOL ST COMM, 118(2), 2001, pp. 79-83
Authors:
Dmitriev, AP
Borovitskaya, E
Levinshtein, ME
Rumyantsev, SL
Shur, MS
Citation: Ap. Dmitriev et al., Low frequency noise in degenerate semiconductors, J APPL PHYS, 90(1), 2001, pp. 301-305
Authors:
Rumyantsev, SL
Pala, N
Shur, MS
Gaska, R
Levinshtein, ME
Khan, MA
Simin, G
Hu, X
Yang, J
Citation: Sl. Rumyantsev et al., Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors, J APPL PHYS, 90(1), 2001, pp. 310-314
Authors:
Dmitriev, AP
Kachorovskii, VY
Shur, MS
Citation: Ap. Dmitriev et al., High-field transport in a dense two-dimensional electron gas in elementarysemiconductors, J APPL PHYS, 89(7), 2001, pp. 3793-3797
Authors:
Fjeldly, TA
Deng, YQ
Shur, MS
Hjalmarson, HP
Muyshondt, A
Ytterdal, T
Citation: Ta. Fjeldly et al., Modeling of high-dose-rate transient ionizing radiation effects in bipolardevices, IEEE NUCL S, 48(5), 2001, pp. 1721-1730
Authors:
Rumyantsev, SL
Pala, N
Shur, MS
Borovitskaya, E
Dmitriev, AP
Levinshtein, ME
Gaska, R
Khan, MA
Yang, JW
Hu, XH
Simin, G
Citation: Sl. Rumyantsev et al., Generation-recombination noise in GaN/A1GaN heterostructure field effect transistors, IEEE DEVICE, 48(3), 2001, pp. 530-534
Authors:
Shur, MS
Sinius, J
Gaska, R
Rumyantsev, S
Citation: Ms. Shur et al., Photovoltaic effect in CdS on flexible substrate, ELECTR LETT, 37(8), 2001, pp. 518-519
Authors:
Ciplys, D
Rimeika, R
Sereika, A
Gaska, R
Shur, MS
Yang, JW
Khan, MA
Citation: D. Ciplys et al., GaN-based SAW delay-line oscillator, ELECTR LETT, 37(8), 2001, pp. 545-546
Authors:
Shur, MS
Gaskiene, G
Rumyantsev, SL
Rimeika, R
Gaska, R
Sinius, J
Citation: Ms. Shur et al., Photovoltaic effect in threads covered with CdS, ELECTR LETT, 37(16), 2001, pp. 1036-1038
Authors:
Rumyantsev, SL
Pala, N
Shur, MS
Gaska, R
Levinshtein, ME
Khan, MA
Simin, G
Hu, X
Yang, J
Citation: Sl. Rumyantsev et al., Thin n-GaN films with low level of 1/f noise, ELECTR LETT, 37(11), 2001, pp. 720-721
Authors:
Dmitriev, AP
Kachorovskii, VY
Shur, MS
Citation: Ap. Dmitriev et al., Plasma wave instability in gated collisionless two-dimensional electron gas, APPL PHYS L, 79(7), 2001, pp. 922-924
Authors:
Rumyantsev, SL
Pala, N
Shur, MS
Gaska, R
Levinshtein, ME
Adivarahan, V
Yang, J
Simin, G
Asif Khan, M
Citation: Sl. Rumyantsev et al., Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors, APPL PHYS L, 79(6), 2001, pp. 866-868
Authors:
Hu, X
Koudymov, A
Simin, G
Yang, J
Khan, MA
Tarakji, A
Shur, MS
Gaska, R
Citation: X. Hu et al., Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effecttransistors, APPL PHYS L, 79(17), 2001, pp. 2832-2834
Authors:
Simin, G
Koudymov, A
Tarakji, A
Hu, X
Yang, J
Khan, MA
Shur, MS
Gaska, R
Citation: G. Simin et al., Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors, APPL PHYS L, 79(16), 2001, pp. 2651-2653
Authors:
Adivarahan, V
Simin, G
Tamulaitis, G
Srinivasan, R
Yang, J
Khan, MA
Shur, MS
Gaska, R
Citation: V. Adivarahan et al., Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors, APPL PHYS L, 79(12), 2001, pp. 1903-1905
Authors:
Gaska, R
Shur, MS
Hu, X
Yang, JW
Tarakji, A
Simin, G
Khan, A
Deng, J
Werner, T
Rumyantsev, S
Pala, N
Citation: R. Gaska et al., Highly doped thin-channel GaN-metal-semiconductor field-effect transistors, APPL PHYS L, 78(6), 2001, pp. 769-771
Authors:
Shatalov, M
Chitnis, A
Adivarahan, V
Lunev, A
Zhang, J
Yang, JW
Fareed, Q
Simin, G
Zakheim, A
Khan, MA
Gaska, R
Shur, MS
Citation: M. Shatalov et al., Band-edge luminescence in quaternary AllnGaN light-emitting diodes, APPL PHYS L, 78(6), 2001, pp. 817-819
Authors:
Adivarahan, V
Lunev, A
Khan, MA
Yang, J
Simin, G
Shur, MS
Gaska, R
Citation: V. Adivarahan et al., Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaNfor high-current devices, APPL PHYS L, 78(18), 2001, pp. 2781-2783
Authors:
Lu, JQ
Shur, MS
Citation: Jq. Lu et Ms. Shur, Terahertz detection by high-electron-mobility transistor: Enhancement by drain bias, APPL PHYS L, 78(17), 2001, pp. 2587-2588
Authors:
Tarakji, A
Simin, G
Ilinskaya, N
Hu, X
Kumar, A
Koudymov, A
Yang, J
Khan, MA
Shur, MS
Gaska, R
Citation: A. Tarakji et al., Mechanism of radio-frequency current collapse in GaN-AlGaN field-effect transistors, APPL PHYS L, 78(15), 2001, pp. 2169-2171