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Results:
1-16
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Results: 16
Authors:
Bolhovityanov, YB
Pchelyakov, OP
Sokolov, LV
Nikiforov, AI
Voigtlander, B
Citation: Yb. Bolhovityanov et al., Self-organizing and self-assembling of GexSi1-x quantum dots - mechanisms of formation by MBE, IAN FIZ, 65(2), 2001, pp. 180-186
Authors:
Vasilenko, AP
Kolesnikov, AV
Nikitenko, SG
Fedorov, AA
Sokolov, LV
Nikiforov, AI
Trukhanov, EM
Citation: Ap. Vasilenko et al., X-ray film interferometer as an instrument for semiconductor heterostructure investigation, NUCL INST A, 470(1-2), 2001, pp. 110-113
Authors:
Bolkhovityanov, YB
Gutakovskii, AK
Mashanov, VI
Pchelyakov, OP
Revenko, MA
Sokolov, LV
Citation: Yb. Bolkhovityanov et al., Solid solutions GeSi grown by MBE on a low temperature Si(001) buffer layer: specific features of plastic relaxation, THIN SOL FI, 392(1), 2001, pp. 98-106
Authors:
Wakayama, Y
Gerth, G
Werner, P
Sokolov, LV
Citation: Y. Wakayama et al., Effect of submonolayer carbon on nanoscale Ge dot growth on Si(001) substrates, SURF SCI, 493(1-3), 2001, pp. 399-404
Authors:
Wakayama, Y
Gerth, G
Werner, P
Gosele, U
Sokolov, LV
Citation: Y. Wakayama et al., Control of structure, size and density of Ge dot on Si (100) through multistep procedure, J CRYST GR, 231(4), 2001, pp. 474-487
Authors:
Pchelyakov, OP
Bolkhovityanov, YB
Dvurechenskii, AV
Sokolov, LV
Nikiforov, AI
Yakimov, AI
Voigtlander, B
Citation: Op. Pchelyakov et al., Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties, SEMICONDUCT, 34(11), 2000, pp. 1229-1247
Authors:
Pchelyakov, OP
Bolkhovityanov, YB
Sokolov, LV
Nikiforov, AI
Voigtlander, B
Citation: Op. Pchelyakov et al., Molecular beam epitaxy of nanostructures based on silicon and germanium, IAN FIZ, 64(2), 2000, pp. 205-214
Authors:
Kolesnikov, AV
Vasilenko, AP
Trukhanov, EM
Sokolov, LV
Fedorov, AA
Pchelyakov, OP
Romanov, SI
Citation: Av. Kolesnikov et al., Investigation of the atomic crystal plane relief by X-ray epitaxial film interferometer, APPL SURF S, 166(1-4), 2000, pp. 82-86
Authors:
Fedorov, AA
Kolesnikov, AV
Vasilenko, AP
Pchelyakov, OP
Romanov, SI
Sokolov, LV
Trukhanov, EM
Citation: Aa. Fedorov et al., An X-ray epitaxial film interferometer as a tool for studying the structure of a semiconductor heterosystem, INSTR EXP R, 43(2), 2000, pp. 271-274
Authors:
Wakayama, Y
Gerth, G
Werner, P
Gosele, U
Sokolov, LV
Citation: Y. Wakayama et al., Structural transition of Ge dots induced by submonolayer carbon on Ge wetting layer, APPL PHYS L, 77(15), 2000, pp. 2328-2330
Authors:
Gutakovsky, AK
Romanov, SI
Pchelyakov, OP
Mashanov, VI
Sokolov, LV
Larichkin, IV
Citation: Ak. Gutakovsky et al., The epitaxy of silicon and germanium-silicon films on porous Si, IAN FIZ, 63(2), 1999, pp. 255-261
Authors:
Neizvestnyi, IG
Nikiforov, AI
Pchelyakov, OP
Sokolov, LV
Shwartz, NL
Yanovitskaya, ZS
Citation: Ig. Neizvestnyi et al., RHEED oscillations during the MBE process under the coexistence of step flow and two-dimensional nucleation growth modes, PHYS LOW-D, 1-2, 1999, pp. 81-96
Authors:
Sokolov, LV
Markovets, MY
Shapoval, AP
Morozov, YG
Citation: Lv. Sokolov et al., Long-term monitoring of spring migration time in passerines in the CourishSpit (the Baltic Sea). 2. Influence of temperature on migration terms, ZOOL ZH, 78(9), 1999, pp. 1102-1109
Authors:
Sokolov, LV
Markovets, MY
Shapoval, AP
Morozov, YG
Citation: Lv. Sokolov et al., Long-term monitoring of spring migration time in passerines in the CourishSpit (the Baltic Sea). I. Dynamics of migration terms, ZOOL ZH, 78(6), 1999, pp. 709-717
Authors:
Sokolov, LV
Citation: Lv. Sokolov, Population dynamics of passerine birds, ZOOL ZH, 78(3), 1999, pp. 311-324
Authors:
Romanov, SI
Mashanov, VI
Sokolov, LV
Gutakovskii, A
Pchelyakov, OP
Citation: Si. Romanov et al., GeSi films with reduced dislocation density grown by molecular-beam epitaxy on compliant substrates based on porous silicon, APPL PHYS L, 75(26), 1999, pp. 4118-4120
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