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Results:
1-15
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Results: 15
Authors:
Shen, YL
Jacobs, DB
Malliaras, GG
Koley, G
Spencer, MG
Ioannidis, A
Citation: Yl. Shen et al., Modification of indium tin oxide for improved hole injection in organic light emitting diodes, ADVAN MATER, 13(16), 2001, pp. 1234-1238
Authors:
Pau, H
De, S
Spencer, MG
Steele, PRM
Citation: H. Pau et al., Metastatic malignant melanoma of the larynx, J LARYNG OT, 115(11), 2001, pp. 925-927
Authors:
Koley, G
Spencer, MG
Citation: G. Koley et Mg. Spencer, Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy, J APPL PHYS, 90(1), 2001, pp. 337-344
Authors:
Spencer, MG
Citation: Mg. Spencer, The reception of Locke's politics: From the 1690s to the 1830s, vol 1, TheGlorious Revolution defended, 1690-1704, vol 2, Patriarchalism, the socialcontract and civic virtue, 1705-1760, vol 3, The age of the American Revolution, 1760-1780, vol 4, Political reform in the age of the French Revolution, 1780-1838, vol 5, Church, dissent and religious toleration, 1689-1773, vol 6, Wealth, property and commerce, 1696-1832, EIGHT-CT ST, 34(4), 2001, pp. 642-645
Authors:
Spencer, MG
Citation: Mg. Spencer, John Locke: A descriptive bibliography, EIGHT-CT ST, 34(4), 2001, pp. 642-645
Authors:
Koley, G
Spencer, MG
Bhangale, HR
Citation: G. Koley et al., Cantilever effects on the measurement of electrostatic potentials by scanning Kelvin probe microscopy, APPL PHYS L, 79(4), 2001, pp. 545-547
Authors:
Koley, G
Spencer, MG
Citation: G. Koley et Mg. Spencer, Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition, APPL PHYS L, 78(19), 2001, pp. 2873-2875
Authors:
Rumyantsev, S
Levinshtein, M
Jackson, AD
Mohammad, SN
Harris, GL
Spencer, MG
Shur, M
Citation: S. Rumyantsev et al., Boron nitride (BN), PROPERTIES OF ADVANCED SEMICONDUCTOR MATERIALS: GAN, AIN, INN, BN, SIC, SIGE, 2001, pp. 67-92
Authors:
Sarney, WL
Salamanca-Riba, L
Vispute, RD
Zhou, P
Taylor, C
Spencer, MG
Jones, KA
Citation: Wl. Sarney et al., SiC/Si(111) film quality as a function of GeH4 flow in an MOCVD reactor, J ELEC MAT, 29(3), 2000, pp. 359-363
Authors:
Webb, CJ
Porter, G
Spencer, MG
Sissons, CRJ
Citation: Cj. Webb et al., Cavernous haemangioma of the nasal bones: an alternative management option, J LARYNG OT, 114(4), 2000, pp. 287-289
Authors:
Spencer, MG
Sanner, RM
Chopra, I
Citation: Mg. Spencer et al., Adaptive neurocontrol of simulated rotor vibrations using trailing edge flaps, J IN MAT SY, 10(11), 1999, pp. 855-871
Authors:
Taylor, C
Eshun, E
Spencer, MG
Hobart, KD
Kub, FJ
Citation: C. Taylor et al., Growth of beta SiC on a ceramic SiC substrate using a thin silicon intermediate layer, MAT SCI E B, 61-2, 1999, pp. 583-585
Authors:
Hobart, KD
Kub, FJ
Fatemi, M
Taylor, C
Eshun, E
Spencer, MG
Citation: Kd. Hobart et al., Transfer of ultrathin silicon layers to polycrystalline SiC substrates forthe growth of 3C-SiC epitaxial films, J ELCHEM SO, 146(10), 1999, pp. 3833-3836
Authors:
Spencer, MG
Sanner, RM
Chopra, I
Citation: Mg. Spencer et al., An adaptive neurocontroller for vibration suppression and shape control ofa flexible beam, J IN MAT SY, 9(3), 1998, pp. 160-170
Authors:
Dmitriev, VA
Spencer, MG
Citation: Va. Dmitriev et Mg. Spencer, SiC fabrication technology: Growth and doping, SEM SEMIMET, 52, 1998, pp. 21-75
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