Authors:
Fortunato, G
Mariucci, L
Stanizzi, M
Privitera, V
Spinella, C
Coffa, S
Napolitani, E
Citation: G. Fortunato et al., Fabrication of ultra-shallow junctions with high electrical activation by excimer laser annealing, MAT SC S PR, 4(5), 2001, pp. 417-423
Citation: G. D'Arrigo et C. Spinella, Competitive delineation of n- and p-doped Si by selective electrochemical etch, MAT SC S PR, 4(1-3), 2001, pp. 93-95
Authors:
Compagnini, G
Fragala, ME
D'Urso, L
Spinella, C
Puglisi, O
Citation: G. Compagnini et al., Formation and characterization of high-density silver nanoparticles embedded in silica thin films by "in situ" self-reduction, J MATER RES, 16(10), 2001, pp. 2934-2938
Authors:
Alberti, A
La Via, F
Spinella, C
Rimini, E
Citation: A. Alberti et al., Structural relationship of polycrystalline cobalt silicide lines to (001) silicon substrate and their thermal stability, MICROEL ENG, 55(1-4), 2001, pp. 163-169
Authors:
Re, M
Scalese, S
Mirabella, S
Terrasi, A
Priolo, F
Rimini, E
Berti, M
Coati, A
Drigo, A
Carnera, A
De Salvador, D
Spinella, C
La Mantia, A
Citation: M. Re et al., Structural characterisation and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 749-755
Authors:
Crupi, I
Lombardo, S
Spinella, C
Bongiorno, C
Liao, Y
Gerardi, C
Fazio, B
Vulpio, M
Privitera, S
Citation: I. Crupi et al., Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide, J APPL PHYS, 89(10), 2001, pp. 5552-5558
Authors:
Privitera, S
Spinella, C
La Via, F
Grimaldi, MG
Rimini, E
Citation: S. Privitera et al., Simulation of the transformation from the C49 to the C54 phase of TiSi2 inblanket films and narrow conductors, APPL PHYS L, 78(11), 2001, pp. 1514-1516
Citation: G. D'Arrigo et C. Spinella, High resolution measurements of two-dimensional dopant diffusion in silicon, MICROS MICR, 6(3), 2000, pp. 237-245
Citation: C. Spinella et G. D'Arrigo, Electrochemical etching of silicon: A powerful tool for delineating junction profiles in silicon devices by transmission electron microscopy, J VAC SCI B, 18(1), 2000, pp. 576-579
Authors:
Lombardo, S
Coffa, S
Bongiorno, C
Spinella, C
Castagna, E
Sciuto, A
Gerardi, C
Ferrari, F
Fazio, B
Privitera, S
Citation: S. Lombardo et al., Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2, MAT SCI E B, 69, 2000, pp. 295-298
Authors:
Scalese, S
Franzo, G
Mirabella, S
Re, M
Terrasi, A
Priolo, F
Rimini, E
Spinella, C
Carnera, A
Citation: S. Scalese et al., Effect of O : Er concentration ratio on the structural, electrical, and optical properties of Si : Er : O layers grown by molecular beam epitaxy, J APPL PHYS, 88(7), 2000, pp. 4091-4096
Authors:
Privitera, S
La Via, F
Spinella, C
Quilici, S
Borghesi, A
Meinardi, F
Grimaldi, MG
Rimini, E
Citation: S. Privitera et al., Nucleation and growth of C54 grains into C49TiSi(2) thin films monitored by micro-Raman imaging, J APPL PHYS, 88(12), 2000, pp. 7013-7019
Authors:
Pucker, G
Bellutti, P
Spinella, C
Gatterer, K
Cazzanelli, M
Pavesi, L
Citation: G. Pucker et al., Room temperature luminescence from (Si/SiO2)(n) (n=1,2,3) multilayers grown in an industrial low-pressure chemical vapor deposition reactor, J APPL PHYS, 88(10), 2000, pp. 6044-6051
Authors:
Vinciguerra, V
Franzo, G
Priolo, F
Iacona, F
Spinella, C
Citation: V. Vinciguerra et al., Quantum confinement and recombination dynamics in silicon nanocrystals embedded in Si/SiO2 superlattices, J APPL PHYS, 87(11), 2000, pp. 8165-8173
Authors:
Privitera, V
Spinella, C
Fortunato, G
Mariucci, L
Citation: V. Privitera et al., Two-dimensional delineation of ultrashallow junctions obtained by ion implantation and excimer laser annealing, APPL PHYS L, 77(4), 2000, pp. 552-554
Citation: S. Coffa et al., Transition from small interstitial clusters to extended {311} defects in ion-implanted Si, APPL PHYS L, 76(3), 2000, pp. 321-323
Authors:
Spinella, C
Coffa, S
Bongiorno, C
Pannitteri, S
Grimaldi, MG
Citation: C. Spinella et al., Origin and perspectives of the 1.54 mu m luminescence from ion-beam-synthesized beta-FeSi2 precipitates in Si, APPL PHYS L, 76(2), 2000, pp. 173-175