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Results: 1-11 |
Results: 11
Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors
Authors: Driad, R McKinnon, WR McAlister, SP Garanzotis, T SpringThorpe, AJ
Citation: R. Driad et al., Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors, SEMIC SCI T, 16(3), 2001, pp. 171-175
Intersubband Raman laser
Authors: Liu, HC Cheung, IW SpringThorpe, AJ Dharma-wardana, C Wasilewski, ZR Lockwood, DJ Aers, GC
Citation: Hc. Liu et al., Intersubband Raman laser, APPL PHYS L, 78(23), 2001, pp. 3580-3582
Microcavity-enhanced surface-emitted second-harmonic generation from 200 fs pulses at 1.5 mu m
Authors: Ulmer, TG Hanna, M Washburn, BR Verber, CM Ralph, SE SpringThorpe, AJ
Citation: Tg. Ulmer et al., Microcavity-enhanced surface-emitted second-harmonic generation from 200 fs pulses at 1.5 mu m, APPL PHYS L, 78(22), 2001, pp. 3406-3408
Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4
Authors: Liu, WK Lubyshev, DI Specht, P Zhao, R Weber, ER Gebauer, J SpringThorpe, AJ Streater, RW Vijarnwannaluk, S Songprakob, W Zallen, R
Citation: Wk. Liu et al., Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4, J VAC SCI B, 18(3), 2000, pp. 1594-1597
160-Gb/s optically time-division multiplexed link with all-optical demultiplexing
Authors: Ulmer, TG Gross, MC Patel, KM Simmons, JT Juodawlkis, PW Washburn, BR Astar, WS SpringThorpe, AJ Kenan, RP Verber, CM Ralph, SE
Citation: Tg. Ulmer et al., 160-Gb/s optically time-division multiplexed link with all-optical demultiplexing, J LIGHTW T, 18(12), 2000, pp. 1964-1977
Optically pumped intersubband laser: Resonance positions and many-body effects
Authors: Liu, HC SpringThorpe, AJ
Citation: Hc. Liu et Aj. Springthorpe, Optically pumped intersubband laser: Resonance positions and many-body effects, PHYS REV B, 61(23), 2000, pp. 15629-15632
SIMS measurements of oxygen impurities in AlGaInP semiconductor material and laser diodes
Authors: Najda, SP Kean, A Streater, RW SpringThorpe, AJ
Citation: Sp. Najda et al., SIMS measurements of oxygen impurities in AlGaInP semiconductor material and laser diodes, J CRYST GR, 220(3), 2000, pp. 226-230
Short-wavelength laser diodes based on AlInAs/AlGaAs self-assembled quantum dots
Authors: Hinzer, K Lapointe, J Feng, Y Delage, A Fafard, S SpringThorpe, AJ Griswold, EM
Citation: K. Hinzer et al., Short-wavelength laser diodes based on AlInAs/AlGaAs self-assembled quantum dots, J APPL PHYS, 87(3), 2000, pp. 1496-1502
A comparative study of carbon incorporation in heavily doped GaAs and Al0.3Ga0.7As grown by solid-source molecular beam epitaxy using carbon tetrabromide
Authors: Lubyshev, D Micovic, M Gratteau, N Cai, WZ Miller, DL Ray, O Streater, RW SpringThorpe, AJ
Citation: D. Lubyshev et al., A comparative study of carbon incorporation in heavily doped GaAs and Al0.3Ga0.7As grown by solid-source molecular beam epitaxy using carbon tetrabromide, J VAC SCI B, 17(3), 1999, pp. 1180-1184
Heavily carbon-doped In0.53Ga0.47As on InP (001) substrate grown by solid source molecular beam epitaxy
Authors: Cai, WZ Lubyshev, DI Miller, DL Streater, RW SpringThorpe, AJ
Citation: Wz. Cai et al., Heavily carbon-doped In0.53Ga0.47As on InP (001) substrate grown by solid source molecular beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1190-1194
Two-photon absorption-induced self-phase modulation in GaAs-AlGaAs waveguides for surface-emitted second-harmonic generation
Authors: Ulmer, TG Tan, RSK Zhou, ZP Ralph, SE Kenan, RP Verber, CM SpringThorpe, AJ
Citation: Tg. Ulmer et al., Two-photon absorption-induced self-phase modulation in GaAs-AlGaAs waveguides for surface-emitted second-harmonic generation, OPTICS LETT, 24(11), 1999, pp. 756-758
Risultati: 1-11 |