Authors: Foxon, CT Novikov, SV Liao, Y Winser, AJ Harrison, I Li, T Campion, RP Staddon, CR Davis, CS

Citation: Ct. Foxon et al., The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy, PHYS ST S-B, 228(1), 2001, pp. 203-206

Authors: Harrison, I Novikov, SV Li, T Campion, RP Staddon, CR Davis, CS Liao, Y Winser, AJ Foxon, CT

Citation: I. Harrison et al., On the origin of blue emission from As-doped GaN, PHYS ST S-B, 228(1), 2001, pp. 213-217

Authors: Novikov, SV Li, T Winser, AJ Campion, RP Staddon, CR Davic, CS Harrison, I Foxon, CT

Citation: Sv. Novikov et al., Temperature dependence of the miscibility gap on the GaN-Rich side of the Ga-N-As system, PHYS ST S-B, 228(1), 2001, pp. 223-225

Authors: Novikov, SV Li, T Winser, AJ Foxon, CT Campion, RP Staddon, CR Davis, CS Harrison, I Kovarsky, AP Ber, BJ

Citation: Sv. Novikov et al., The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using arsenic tetramers, PHYS ST S-B, 228(1), 2001, pp. 227-229

Authors: Stanton, NM Kent, AJ Hawker, P Cheng, TS Foxon, CT Korakakis, D Campion, RP Staddon, CR Middleton, JR

Citation: Nm. Stanton et al., Photoenhanced wet chemical etching of MBE grown gallium nitride, MAT SCI E B, 68(1), 1999, pp. 52-55