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Results: 1-7 |
Results: 7

Authors: Rodrigues, AM Gomes, HL Stallinga, P Pereira, L Pereira, E
Citation: Am. Rodrigues et al., Electrical characterization of CVD diamond-n(+) silicon junctions, DIAM RELAT, 10(3-7), 2001, pp. 858-862

Authors: Stallinga, P Gomes, HL Charas, A Morgado, J Alcacer, L
Citation: P. Stallinga et al., Electrical characterization of pn-junctions of PPV and silicon, SYNTH METAL, 121(1-3), 2001, pp. 1535-1536

Authors: Stallinga, P Gomes, HL Rost, H Holmes, AB Harrison, MG Friend, RH
Citation: P. Stallinga et al., Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization, J APPL PHYS, 89(3), 2001, pp. 1713-1724

Authors: Stallinga, P Gomes, HL Rost, H Holmes, AB Harrison, MG Friend, RH
Citation: P. Stallinga et al., Electronic levels in MEH-PPV, SYNTH METAL, 111, 2000, pp. 535-537

Authors: Stallinga, P Gomes, HL Rost, H Holmes, AB Harrison, MG Friend, RH Biscarini, F Taliani, C Jones, GW Taylor, DM
Citation: P. Stallinga et al., Determination of deep and shallow levels in conjugated polymers by electrical methods, PHYSICA B, 274, 1999, pp. 923-926

Authors: Stallinga, P Gomes, HL Jones, GW Taylor, DM
Citation: P. Stallinga et al., Electrical study of impurity states in conjugated polymers, SYNTH METAL, 101(1-3), 1999, pp. 496-497

Authors: Gomes, HL Stallinga, P Rost, H Holmes, AB Harrison, MG Friend, RH
Citation: Hl. Gomes et al., Analysis of deep levels in a phenylenevinylene polymer by transient capacitance methods, APPL PHYS L, 74(8), 1999, pp. 1144-1146
Risultati: 1-7 |