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Results: 1-25 | 26-34
Results: 1-25/34
Multiple color capability from rare earth-doped gallium nitride
Authors: Steckl, AJ Heikenfeld, J Lee, DS Garter, M
Citation: Aj. Steckl et al., Multiple color capability from rare earth-doped gallium nitride, MAT SCI E B, 81(1-3), 2001, pp. 97-101
Spectroscopic studies of the visible and infrared luminescence from Er doped GaN
Authors: Hommerich, U Seo, JT Abernathy, CR Steckl, AJ Zavada, JM
Citation: U. Hommerich et al., Spectroscopic studies of the visible and infrared luminescence from Er doped GaN, MAT SCI E B, 81(1-3), 2001, pp. 116-120
Optimum Er concentration for in situ doped GaN visible and infrared luminescence
Authors: Lee, DS Heikenfeld, J Steckl, AJ Hommerich, U Seo, JT Braud, A Zavada, J
Citation: Ds. Lee et al., Optimum Er concentration for in situ doped GaN visible and infrared luminescence, APPL PHYS L, 79(6), 2001, pp. 719-721
Room-temperature-grown rare-earth-doped GaN luminescent thin films
Authors: Lee, DS Steckl, AJ
Citation: Ds. Lee et Aj. Steckl, Room-temperature-grown rare-earth-doped GaN luminescent thin films, APPL PHYS L, 79(13), 2001, pp. 1962-1964
Digital thin-film color optical memory
Authors: Chi, CJ Steckl, AJ
Citation: Cj. Chi et Aj. Steckl, Digital thin-film color optical memory, APPL PHYS L, 78(2), 2001, pp. 255-257
High-density Er-implanted GaN optical memory devices
Authors: Lee, BK Chi, RCJ Chao, DLC Cheng, J Chry, IYN Beyette, FR Steckl, AJ
Citation: Bk. Lee et al., High-density Er-implanted GaN optical memory devices, APPL OPTICS, 40(21), 2001, pp. 3552-3558
Comparison of the optical properties of Er3+ doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecularbeam epitaxy (SSMBE)
Authors: Hommerich, U Seo, JT MacKenzie, JD Abernathy, CR Birkhahn, R Steckl, AJ Zavada, JM
Citation: U. Hommerich et al., Comparison of the optical properties of Er3+ doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecularbeam epitaxy (SSMBE), MRS I J N S, 5, 2000, pp. NIL_709-NIL_714
CMOS-based photoreceiver arrays for page-oriented optical storage access
Authors: Tang, J Seshadri, B Naughton, KN Lee, BK Chi, RCJ Steckl, AJ Beyette, FR
Citation: J. Tang et al., CMOS-based photoreceiver arrays for page-oriented optical storage access, IEEE PHOTON, 12(9), 2000, pp. 1234-1236
CW blue-green light emission from GaN and SiC by sum-frequency generation and second harmonic generation
Authors: Chao, LC Steckl, AJ
Citation: Lc. Chao et Aj. Steckl, CW blue-green light emission from GaN and SiC by sum-frequency generation and second harmonic generation, J ELEC MAT, 29(9), 2000, pp. 1059-1062
RBS/channeling study of Er doped GaN films grown by MBE on Si(111) substrates
Authors: Lorenz, K Vianden, R Birkhahn, R Steckl, AJ da Silva, MF Soares, JC Alves, E
Citation: K. Lorenz et al., RBS/channeling study of Er doped GaN films grown by MBE on Si(111) substrates, NUCL INST B, 161, 2000, pp. 946-951
In situ N-2-doping of SiC films grown on Si(111) by chemical vapor deposition from organosilanes
Authors: Chen, J Steckl, AJ Loboda, MJ
Citation: J. Chen et al., In situ N-2-doping of SiC films grown on Si(111) by chemical vapor deposition from organosilanes, J ELCHEM SO, 147(6), 2000, pp. 2324-2327
Formation of SiCSOI structures by direct growth on insulating layers
Authors: Chen, J Scofield, J Steckl, AJ
Citation: J. Chen et al., Formation of SiCSOI structures by direct growth on insulating layers, J ELCHEM SO, 147(10), 2000, pp. 3845-3849
Photoluminescence studies and read/write process of a strong two-photon absorbing chromophore
Authors: Sivaraman, R Clarson, SJ Lee, BK Steckl, AJ Reinhardt, BA
Citation: R. Sivaraman et al., Photoluminescence studies and read/write process of a strong two-photon absorbing chromophore, APPL PHYS L, 77(3), 2000, pp. 328-330
Alternating current thin-film electroluminescence of GaN : Er
Authors: Heikenfeld, J Steckl, AJ
Citation: J. Heikenfeld et Aj. Steckl, Alternating current thin-film electroluminescence of GaN : Er, APPL PHYS L, 77(22), 2000, pp. 3520-3522
Local structure and bonding of Er in GaN: A contrast with Er in Si
Authors: Citrin, PH Northrup, PA Birkhahn, R Steckl, AJ
Citation: Ph. Citrin et al., Local structure and bonding of Er in GaN: A contrast with Er in Si, APPL PHYS L, 76(20), 2000, pp. 2865-2867
Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu
Authors: Lee, DS Heikenfeld, J Birkhahn, R Garter, M Lee, BK Steckl, AJ
Citation: Ds. Lee et al., Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu, APPL PHYS L, 76(12), 2000, pp. 1525-1527
Low-voltage GaN : Er green electroluminescent devices
Authors: Heikenfeld, J Lee, DS Garter, M Birkhahn, R Steckl, AJ
Citation: J. Heikenfeld et al., Low-voltage GaN : Er green electroluminescent devices, APPL PHYS L, 76(11), 2000, pp. 1365-1367
Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources
Authors: Chao, LC Lee, BK Chi, CJ Cheng, J Chyr, I Steckl, AJ
Citation: Lc. Chao et al., Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources, J VAC SCI B, 17(6), 1999, pp. 2791-2794
Damage generation and removal in the Ga+ focused ion beam micromachining of GaN for photonic applications
Authors: Chyr, I Lee, B Chao, LC Steckl, AJ
Citation: I. Chyr et al., Damage generation and removal in the Ga+ focused ion beam micromachining of GaN for photonic applications, J VAC SCI B, 17(6), 1999, pp. 3063-3067
Development of an Er-Ni liquid alloy ion source
Authors: Chao, LC Steckl, AJ
Citation: Lc. Chao et Aj. Steckl, Development of an Er-Ni liquid alloy ion source, J VAC SCI B, 17(3), 1999, pp. 1056-1058
Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates
Authors: Birkhahn, R Hudgins, R Lee, D Steckl, AJ Molnar, RJ Saleh, A Zavada, JM
Citation: R. Birkhahn et al., Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates, J VAC SCI B, 17(3), 1999, pp. 1195-1199
Focused ion beam micromilling of GaN and related substrate materials (sapphire, SiC, and Si)
Authors: Steckl, AJ Chyr, I
Citation: Aj. Steckl et I. Chyr, Focused ion beam micromilling of GaN and related substrate materials (sapphire, SiC, and Si), J VAC SCI B, 17(2), 1999, pp. 362-365
Photonic applications of rare-earth-doped materials
Authors: Steckl, AJ Zavada, JM
Citation: Aj. Steckl et Jm. Zavada, Photonic applications of rare-earth-doped materials, MRS BULL, 24(9), 1999, pp. 16-20
Optoelectronic properties and applications of rare-earth-doped GaN
Authors: Steckl, AJ Zavada, JM
Citation: Aj. Steckl et Jm. Zavada, Optoelectronic properties and applications of rare-earth-doped GaN, MRS BULL, 24(9), 1999, pp. 33-38
Electron microscopy study of SiC obtained by the carbonization of Si(111)
Authors: Pacheco, FJ Sanchez, AM Molina, SI Araujo, D Devrajan, J Steckl, AJ Garcia, R
Citation: Fj. Pacheco et al., Electron microscopy study of SiC obtained by the carbonization of Si(111), THIN SOL FI, 344, 1999, pp. 305-308
Risultati: 1-25 | 26-34