Authors:
Grandidier, B
Nys, JP
Stievenard, D
Krzeminski, C
Delerue, C
Frere, P
Blanchard, P
Roncali, J
Citation: B. Grandidier et al., Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si(100) surface, SURF SCI, 473(1-2), 2001, pp. 1-7
Citation: B. Legrand et D. Stievenard, Atomic force microscope tip-surface behavior under continuous bias or pulsed voltages in noncontact mode, APPL PHYS L, 76(8), 2000, pp. 1018-1020
Authors:
Legrand, B
Agache, V
Nys, JP
Senez, V
Stievenard, D
Citation: B. Legrand et al., Formation of silicon islands on a silicon on insulator substrate upon thermal annealing, APPL PHYS L, 76(22), 2000, pp. 3271-3273
Authors:
Grandidier, B
de la Broise, X
Stievenard, D
Delerue, C
Lannoo, M
Stellmacher, M
Bourgoin, J
Citation: B. Grandidier et al., Defect-assisted tunneling current: A revised interpretation of scanning tunneling spectroscopy measurements, APPL PHYS L, 76(21), 2000, pp. 3142-3144
Authors:
Krzeminski, C
Delerue, C
Allan, G
Haguet, V
Stievenard, D
Frere, P
Levillain, E
Roncali, J
Citation: C. Krzeminski et al., Theoretical characterization of the electronic properties of extended thienylenevinylene oligomers, J CHEM PHYS, 111(14), 1999, pp. 6643-6649
Authors:
Syrykh, C
Nys, JP
Legrand, B
Stievenard, D
Citation: C. Syrykh et al., Nanoscale desorption of H-passivated Si(100)-2x1 surfaces using an ultrahigh vacuum scanning tunneling microscope, J APPL PHYS, 85(7), 1999, pp. 3887-3892
Citation: B. Legrand et D. Stievenard, Nanooxidation of silicon with an atomic force microscope: A pulsed voltagetechnique, APPL PHYS L, 74(26), 1999, pp. 4049-4051
Authors:
Legrand, B
Nys, JP
Grandidier, B
Stievenard, D
Lemaitre, A
Gerard, JM
Thierry-Mieg, V
Citation: B. Legrand et al., Quantum box size effect on vertical self-alignment studied using cross-sectional scanning tunneling microscopy, APPL PHYS L, 74(18), 1999, pp. 2608-2610