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Results: 1-9 |
Results: 9
GaN-based light emitting diodes with tunnel junctions
Authors: Takeuchi, T Hasnain, G Corzine, S Hueschen, M Schneider, RP Kocot, C Blomqvist, M Chang, YL Lefforge, D Krames, MR Cook, LW Stockman, SA
Citation: T. Takeuchi et al., GaN-based light emitting diodes with tunnel junctions, JPN J A P 2, 40(8B), 2001, pp. L861-L863
LEDs: New lamps for old and a paradigm for ongoing curriculum modernization
Authors: Condren, SM Lisensky, GC Ellis, AB Nordell, KJ Kuech, TF Stockman, SA
Citation: Sm. Condren et al., LEDs: New lamps for old and a paradigm for ongoing curriculum modernization, J CHEM EDUC, 78(8), 2001, pp. 1033-1040
High-power AlGaInN flip-chip light-emitting diodes
Authors: Wierer, JJ Steigerwald, DA Krames, MR O'Shea, JJ Ludowise, MJ Christenson, G Shen, YC Lowery, C Martin, PS Subramanya, S Gotz, W Gardner, NF Kern, RS Stockman, SA
Citation: Jj. Wierer et al., High-power AlGaInN flip-chip light-emitting diodes, APPL PHYS L, 78(22), 2001, pp. 3379-3381
Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE
Authors: Cederberg, JG Bieg, B Huang, JW Stockman, SA Peanasky, MJ Kuech, TF
Citation: Jg. Cederberg et al., Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE, J ELEC MAT, 29(4), 2000, pp. 426-429
Oxygen incorporation in AlInP, and its effect on p-type doping with magnesium
Authors: Stockman, SA Huang, JW Osentowski, TD Chui, HC Peanasky, MJ Maranowski, SA Grillot, PN Moll, AJ Chen, CH Kuo, CP Liang, BW
Citation: Sa. Stockman et al., Oxygen incorporation in AlInP, and its effect on p-type doping with magnesium, J ELEC MAT, 28(7), 1999, pp. 916-925
High-power truncated-inverted-pyramid (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes exhibiting > 50% external quantum efficiency
Authors: Krames, MR Ochiai-Holcomb, M Hofler, GE Carter-Coman, C Chen, EI Tan, IH Grillot, P Gardner, NF Chui, HC Huang, JW Stockman, SA Kish, FA Craford, MG Tan, TS Kocot, CP Hueschen, M Posselt, J Loh, B Sasser, G Collins, D
Citation: Mr. Krames et al., High-power truncated-inverted-pyramid (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes exhibiting > 50% external quantum efficiency, APPL PHYS L, 75(16), 1999, pp. 2365-2367
1.4x efficiency improvement in transparent-substrate (AlxGa1-x)(0.5)In0.5Plight-emitting diodes with thin (<= 2000 angstrom) active regions
Authors: Gardner, NF Chui, HC Chen, EI Krames, MR Huang, JW Kish, FA Stockman, SA Kocot, CP Tan, TS Moll, N
Citation: Nf. Gardner et al., 1.4x efficiency improvement in transparent-substrate (AlxGa1-x)(0.5)In0.5Plight-emitting diodes with thin (<= 2000 angstrom) active regions, APPL PHYS L, 74(15), 1999, pp. 2230-2232
Intrinsic and oxygen-related deep level defects in In-0.5(AlxGa1-x)(0.5)P grown by metal-organic vapor phase epitaxy
Authors: Cederberg, JG Bieg, B Huang, JW Stockman, SA Peanasky, MJ Kuech, TF
Citation: Jg. Cederberg et al., Intrinsic and oxygen-related deep level defects in In-0.5(AlxGa1-x)(0.5)P grown by metal-organic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 63-68
OMVPE growth of AlGaInP for high-efficiency visible light-emitting diodes
Authors: Chen, CH Stockman, SA Peanasky, MJ Kuo, CP
Citation: Ch. Chen et al., OMVPE growth of AlGaInP for high-efficiency visible light-emitting diodes, SEM SEMIMET, 48, 1997, pp. 97-148
Risultati: 1-9 |