Authors:
Klinger, D
Lefeld-Sosnowska, M
Auleytner, J
Zymierska, D
Nowicki, L
Stonert, A
Kwiatkowski, S
Citation: D. Klinger et al., Extended defect structure induced by pulsed laser annealing in Ge implanted Si crystal, J ALLOY COM, 328(1-2), 2001, pp. 242-247
Authors:
Leszczynski, M
Prystawko, P
Suski, T
Lucznik, B
Domagala, J
Bak-Misiuk, J
Stonert, A
Turos, A
Langer, R
Barski, A
Citation: M. Leszczynski et al., Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire, J ALLOY COM, 286(1-2), 1999, pp. 271-275