AAAAAA

   
Results: 1-8 |
Results: 8
A 210-GHz f(T) SiGeHBT with a non-self-aligned structure
Authors: Jeng, SJ Jagannathan, B Rieh, JS Johnson, J Schonenberg, KT Greenberg, D Stricker, A Chen, H Khater, M Ahlgren, D Freeman, G Stein, K Subbanna, S
Citation: Sj. Jeng et al., A 210-GHz f(T) SiGeHBT with a non-self-aligned structure, IEEE ELEC D, 22(11), 2001, pp. 542-544
Microwave transformers, inductors, and transmission lines implemented in an Si/SiGe HBT process
Authors: Laney, DC Larson, LE Chan, P Malinowski, J Harame, D Subbanna, S Volant, R Case, M
Citation: Dc. Laney et al., Microwave transformers, inductors, and transmission lines implemented in an Si/SiGe HBT process, IEEE MICR T, 49(8), 2001, pp. 1507-1510
Current status and future trends of SiGeBiCMOS technology
Authors: Harame, DL Ahlgren, DC Coolbaugh, DD Dunn, JS Freeman, GG Gillis, JD Groves, RA Hendersen, GN Johnson, RA Joseph, AJ Subbanna, S Victor, AM Watson, KM Webster, CS Zampardi, PJ
Citation: Dl. Harame et al., Current status and future trends of SiGeBiCMOS technology, IEEE DEVICE, 48(11), 2001, pp. 2575-2594
Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect
Authors: Niu, GF Cressler, JD Mathew, SJ Subbanna, S
Citation: Gf. Niu et al., Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect, SOL ST ELEC, 44(8), 2000, pp. 1507-1509
A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs
Authors: Niu, GF Mathew, SJ Cressler, JD Subbanna, S
Citation: Gf. Niu et al., A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs, SOL ST ELEC, 44(7), 2000, pp. 1187-1189
A channel resistance derivative method for effective channel length extraction in LDD MOSFET's
Authors: Niu, GF Cressler, JD Mathew, SJ Subbanna, S
Citation: Gf. Niu et al., A channel resistance derivative method for effective channel length extraction in LDD MOSFET's, IEEE DEVICE, 47(3), 2000, pp. 648-650
Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 mu m SiGeBiCMOS technology
Authors: Niu, G Mathew, SJ Banerjee, G Cressler, JD Clark, SD Palmer, MJ Subbanna, S
Citation: G. Niu et al., Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 mu m SiGeBiCMOS technology, IEEE NUCL S, 46(6), 1999, pp. 1841-1847
A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology
Authors: Niu, GF Cressler, JD Mathew, SJ Subbanna, S
Citation: Gf. Niu et al., A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology, IEEE DEVICE, 46(9), 1999, pp. 1912-1914
Risultati: 1-8 |