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Results:
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Results: 23
Authors:
Takakura, K
Suemasu, T
Hasegawa, F
Citation: K. Takakura et al., Donor and acceptor levels in undoped beta-FeSi2 films grown on Si (001) substrates, JPN J A P 2, 40(3B), 2001, pp. L249-L251
Authors:
Hiroi, N
Suemasu, T
Takakura, K
Seki, N
Hasegawa, F
Citation: N. Hiroi et al., Direct growth of [100]-oriented high-quality beta-FeSi2 films on Si(001) substrates by molecular beam epitaxy, JPN J A P 2, 40(10A), 2001, pp. L1008-L1011
Authors:
Takarabe, K
Teranisi, R
Oinuma, J
Mori, Y
Suemasu, T
Chichibu, S
Hasegawa, F
Citation: K. Takarabe et al., Optical absorption spectra of beta-FeSi2 under pressure, PHYS ST S-B, 223(1), 2001, pp. 259-263
Authors:
Suemasu, T
Fujii, T
Takakura, K
Hasegawa, F
Citation: T. Suemasu et al., Dependence of photoluminescence from beta-FeSi2 and induced deep levels inSi on the size of beta-FeSi2 balls embedded in Si crystals, THIN SOL FI, 381(2), 2001, pp. 209-213
Authors:
Miyake, K
Makita, Y
Maeda, Y
Suemasu, T
Citation: K. Miyake et al., Special issue on silicide kankyo semiconductors - Ecologically friendly semiconductors - Optoelectronic and energy research for next generation - Preface, THIN SOL FI, 381(2), 2001, pp. VII-VII
Authors:
Suemasu, T
Negishi, Y
Takakura, K
Hasegawa, F
Chikyow, T
Citation: T. Suemasu et al., Influence of Si growth temperature for embedding beta+FeSi2 and resultant strain in beta+FeSi2 on light emission from p-Si/beta-FeSi2 particles/n-Si light-emitting diodes, APPL PHYS L, 79(12), 2001, pp. 1804-1806
Authors:
Sasaki, M
Nakayama, T
Shimoyama, N
Suemasu, T
Hasegawa, F
Citation: M. Sasaki et al., Superiority of an AlN intermediate layer for heteroepitaxy of hexagonal GaN, JPN J A P 1, 39(8), 2000, pp. 4869-4874
Authors:
Takakura, K
Suemasu, T
Ikura, Y
Hasegawa, F
Citation: K. Takakura et al., Control of the conduction type of nondoped high mobility beta-FeSi2 films grown from Si/Fe multilayers by change of Si/Fe ratios, JPN J A P 2, 39(8A), 2000, pp. L789-L791
Authors:
Takakura, K
Suemasu, T
Hiroi, N
Hasegawa, F
Citation: K. Takakura et al., Improvement of the electrical properties of beta-FeSi2 films on Si (001) by high-temperature annealing, JPN J A P 2, 39(3AB), 2000, pp. L233-L236
Authors:
Suemasu, T
Negishi, Y
Takakura, K
Hasegawa, F
Citation: T. Suemasu et al., Room temperature 1.6 mu m electroluminescence from a Si-based light emitting diode with beta-FeSi2 active region, JPN J A P 2, 39(10B), 2000, pp. L1013-L1015
Authors:
Hasegawa, F
Minami, M
Suemasu, T
Citation: F. Hasegawa et al., One possibility of obtaining bulk GaN: Halide VPE growth at 1000 degrees Con GaAs (111) substrates, IEICE TR EL, E83C(4), 2000, pp. 633-638
Authors:
Takakura, K
Suemasu, T
Hasegawa, F
Citation: K. Takakura et al., Growth of Mn doped epitaxial beta-FeSi2 films on Si(001) substrates by reactive deposition epitaxy, THIN SOL FI, 369(1-2), 2000, pp. 253-256
Authors:
Suemasu, T
Iikura, Y
Takakura, K
Hasegawa, F
Citation: T. Suemasu et al., Optimum annealing condition for 1.5 mu m photoluminescence from beta-FeSi2balls grown by reactive deposition epitaxy and embedded in Si crystal, J LUMINESC, 87-9, 2000, pp. 528-531
Authors:
Suemasu, T
Sakai, M
Hasegawa, F
Citation: T. Suemasu et al., Optimum thermal-cleaning condition of GaAs surface with a superior arsenicsource: trisdimethylamino-arsine, J CRYST GR, 209(2-3), 2000, pp. 267-271
Authors:
Sasaki, M
Yonemura, S
Nakayama, T
Shimoyama, N
Suemasu, T
Hasegawa, F
Citation: M. Sasaki et al., CBE growth of GaN on GaAs(001) and (111)B substrates using monomethylhydrazine, J CRYST GR, 209(2-3), 2000, pp. 373-377
Authors:
Suemasu, T
Hiroi, N
Fujii, T
Takakura, K
Hasegawa, F
Citation: T. Suemasu et al., Growth of continous and highly (100)-oriented beta-FeSi2 films on Si(001) from Si/Fe multilayers with SiO2 capping and templates, JPN J A P 2, 38(8A), 1999, pp. L878-L881
Authors:
Hasegawa, F
Minami, M
Sunaba, K
Suemasu, T
Citation: F. Hasegawa et al., Thick and smooth hexagonal GaN growth on GaAs (111) substrates at 1000 degrees C with halide vapor phase epitaxy, JPN J A P 2, 38(7A), 1999, pp. L700-L702
Authors:
Suemasu, T
Iikura, Y
Fujii, T
Takakura, K
Hiroi, N
Hasegawa, F
Citation: T. Suemasu et al., Improvement of 1.5 mu m photoluminescence from reactive deposition epitaxy(RDE) grown beta-FeSi2 balls in Si by high temperature annealing, JPN J A P 2, 38(6AB), 1999, pp. L620-L622
Authors:
Hasegawa, F
Minami, M
Sunaba, K
Suemasu, T
Citation: F. Hasegawa et al., Thick GaN growth on GaAs(111) substrates at 1000 degrees C with HVPE, PHYS ST S-A, 176(1), 1999, pp. 421-424
Authors:
Tsuchiya, H
Sunaba, K
Suemasu, T
Hasegawa, F
Citation: H. Tsuchiya et al., Growth of thick and pure cubic GaN on (0 0 1) GaAs by halide VPE, J CRYST GR, 199, 1999, pp. 1056-1060
Authors:
Jida, S
Suemasu, T
Miki, T
Citation: S. Jida et al., Effect of microwave heating on BaTiO3 : Nb ceramics with positive temperature coefficient of resistivity, J APPL PHYS, 86(4), 1999, pp. 2089-2094
Authors:
Suemasu, T
Fujii, T
Iikura, Y
Takakura, K
Hasegawa, F
Citation: T. Suemasu et al., Photoluminescence from reactive deposition epitaxy (RDE) grown beta-FeSi2 balls embedded in Si crystals, JPN J A P 2, 37(12B), 1998, pp. L1513-L1516
Authors:
Suemasu, T
Fujii, T
Tanaka, M
Takakura, K
Iikura, Y
Hasegawa, F
Citation: T. Suemasu et al., Fabrication of p-Si/beta-FeSi2 balls/n-si structures by MBE and their electrical and optical properties, J LUMINESC, 80(1-4), 1998, pp. 473-477
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