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Results:
1-15
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Results: 15
Authors:
Tsukidate, Y
Suemitsu, M
Citation: Y. Tsukidate et M. Suemitsu, Infrared study of SiH4-Adsorbed Si(100) surfaces: Observation and mode assignment of new peaks, JPN J A P 1, 40(9A), 2001, pp. 5206-5210
Authors:
Tsukidate, Y
Suemitsu, M
Citation: Y. Tsukidate et M. Suemitsu, Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy, APPL SURF S, 175, 2001, pp. 43-48
Authors:
Murata, T
Nakazawa, H
Tsukidate, Y
Suemitsu, M
Citation: T. Murata et al., Role of adsorption kinetics in the low-temperature Si growth by gas-sourcemolecular beam epitaxy: In situ observations and detailed modeling of the growth, APPL PHYS L, 79(6), 2001, pp. 746-748
Authors:
Nakazawa, H
Suemitsu, M
Citation: H. Nakazawa et M. Suemitsu, Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy, APPL PHYS L, 79(6), 2001, pp. 755-757
Authors:
Nakazawa, H
Suemitsu, M
Citation: H. Nakazawa et M. Suemitsu, Dissociative adsorption of monomethylsilane on Si(100) as revealed by comparative temperature-programmed desorption studies on H/, C2H2/, and MMS/Si(100), APPL SURF S, 162, 2000, pp. 139-145
Authors:
Suemitsu, M
Enta, Y
Miyanishi, Y
Takegawa, Y
Miyamoto, N
Citation: M. Suemitsu et al., Transition from random to island growth mode during Si(100)-(2 x 1) dry oxidation and its description with autocatalytic reaction model, APPL SURF S, 162, 2000, pp. 293-298
Authors:
Nakazawa, H
Suemitsu, M
Asami, S
Citation: H. Nakazawa et al., Gas-source MBE of SiC/Si using monomethylsilane, THIN SOL FI, 369(1-2), 2000, pp. 269-272
Authors:
Nakazawa, H
Suemitsu, M
Miyamoto, N
Citation: H. Nakazawa et al., Role of hydrogen prepairing in the hydrogen desorption kinetics from Si(100)-2 x 1: effects of hydrogenating-gas and thermal history, SURF SCI, 465(1-2), 2000, pp. 177-185
Authors:
Fukuyama, A
Akashi, Y
Suemitsu, M
Ikari, T
Citation: A. Fukuyama et al., Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurements, J CRYST GR, 210(1-3), 2000, pp. 255-259
Authors:
Suemitsu, M
Enta, Y
Takegawa, Y
Miyamoto, N
Citation: M. Suemitsu et al., Mode transition between growth and decomposition of oxides on Si(001): Kinetically determined critical coverage for oxidation, APPL PHYS L, 77(20), 2000, pp. 3179-3181
Authors:
Enta, Y
Shoji, D
Shinohara, M
Suemitsu, M
Niwano, M
Miyamoto, N
Azuma, Y
Kato, H
Citation: Y. Enta et al., Si 2p spectra of initial thermal oxides on Si(100) oxidized by H2O, JPN J A P 1, 38, 1999, pp. 253-256
Authors:
Watanabe, F
Suemitsu, M
Citation: F. Watanabe et M. Suemitsu, Separation of electron-stimulated-desorption neutrals from outgassing originating from the grid surface of emission-controlled gauges: Studies with aheated-grid gauge, J VAC SCI A, 17(6), 1999, pp. 3467-3472
Authors:
Tsukidate, Y
Suemitsu, M
Citation: Y. Tsukidate et M. Suemitsu, Saturated adsorption of PH3 on Si(100): P and its application to digital control of phosphorus coverage on Si(100) surface, APPL SURF S, 151(1-2), 1999, pp. 148-152
Authors:
Suemitsu, M
Enta, Y
Miyanishi, Y
Miyamoto, N
Citation: M. Suemitsu et al., Initial oxidation of Si(100)-(2x1) as an autocatalytic reaction, PHYS REV L, 82(11), 1999, pp. 2334-2337
Authors:
Suemitsu, M
Sagae, Y
Miyamoto, N
Citation: M. Suemitsu et al., Thermally stimulated-current observation of hole traps in undoped semi-insulating GaAs and their photoquenching behavior, J APPL PHYS, 85(6), 1999, pp. 3139-3141
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