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Results: 26-41/41
Authors:
Lee, JS
Sugou, S
Masumoto, Y
Citation: Js. Lee et al., Real-time observation of ellipsometry oscillation during GaAs layer by layer growth by metalorganic vapor-phase epitaxy, JPN J A P 2, 38(6AB), 1999, pp. L614-L616
Authors:
Yamazaki, H
Anan, T
Kudo, K
Sugou, S
Sasaki, T
Citation: H. Yamazaki et al., Planar-buried-heterostructure laser diodes with oxidized AlAs insulating current blocking, IEEE S T QU, 5(3), 1999, pp. 688-693
Authors:
Lee, JS
Sugou, S
Ren, HW
Masumoto, Y
Citation: Js. Lee et al., In situ ellipsometric study of the formation process of metalorganic vapor-phase epitaxy-grown quantum dots, J VAC SCI B, 17(4), 1999, pp. 1341-1345
Authors:
Yamada, M
Anan, T
Tokutome, K
Sugou, S
Citation: M. Yamada et al., High-temperature characteristics of 1.3-mu m InAsP-InAlGaAs ridge waveguide laser, IEEE PHOTON, 11(2), 1999, pp. 164-166
Authors:
Lee, JS
Sugou, S
Ren, HW
Masumoto, Y
Kurihara, K
Citation: Js. Lee et al., In-situ monitoring of In0.5Ga0.5As quantum dot formation during metalorganic vapor phase epitaxy by fast-nulling ellipsometry, APPL SURF S, 141(1-2), 1999, pp. 114-118
Anti-Stokes photoluminescence of InP self-assembled quantum dots in the presence of electric current
Authors:
Ignatiev, IV
Kozin, IE
Ren, HW
Sugou, S
Matsumoto, Y
Citation: Iv. Ignatiev et al., Anti-Stokes photoluminescence of InP self-assembled quantum dots in the presence of electric current, PHYS REV B, 60(20), 1999, pp. R14001-R14004
Authors:
Sugisaki, M
Ren, HW
Nair, SV
Nishi, K
Sugou, S
Okuno, T
Masumoto, Y
Citation: M. Sugisaki et al., Optical anisotropy in self-assembled InP quantum dots, PHYS REV B, 59(8), 1999, pp. R5300-R5303
Authors:
Lee, JS
Sugou, S
Masumoto, Y
Citation: Js. Lee et al., Spontaneous nanostructure formation on GaAs(211)B substrate, J CRYST GR, 205(4), 1999, pp. 467-473
Authors:
Lee, JS
Sugisaki, M
Ren, HW
Sugou, S
Masumoto, Y
Citation: Js. Lee et al., Spontaneous lateral alignment of multistacked In0.45Ga0.55As quantum dots on GaAs(3 1 1)B substrate, J CRYST GR, 200(1-2), 1999, pp. 77-84
Authors:
Saito, H
Nishi, K
Sugimoto, Y
Sugou, S
Citation: H. Saito et al., Low-threshold lasing from high-density InAs quantum dots of uniform size, ELECTR LETT, 35(18), 1999, pp. 1561-1563
Authors:
Anan, T
Yamada, M
Tokutome, K
Sugou, S
Nishi, K
Kamei, A
Citation: T. Anan et al., Room-temperature pulsed operation of GaAsSb GaAs vertical-cavity surface-emitting lasers, ELECTR LETT, 35(11), 1999, pp. 903-904
Authors:
Saito, H
Nishi, K
Sugou, S
Citation: H. Saito et al., Shape transition of InAs quantum dots by growth at high temperature, APPL PHYS L, 74(9), 1999, pp. 1224-1226
Authors:
Nishi, K
Saito, H
Sugou, S
Lee, JS
Citation: K. Nishi et al., A narrow photoluminescence linewidth of 21 meV at 1.35 mu m from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates, APPL PHYS L, 74(8), 1999, pp. 1111-1113
Authors:
Davydov, V
Ignatiev, I
Ren, HW
Sugou, S
Masumoto, Y
Citation: V. Davydov et al., Observation of built-in electric field in InP self-assembled quantum dot systems, APPL PHYS L, 74(20), 1999, pp. 3002-3004
Authors:
Sugisaki, M
Ren, HW
Nishi, K
Sugou, S
Okuno, T
Masumoto, Y
Citation: M. Sugisaki et al., Magnetic field effects in InP self-assembled quantum dots, PHYSICA B, 258, 1998, pp. 169-172
Authors:
Lee, JS
Ren, HW
Sugou, S
Masumoto, Y
Citation: Js. Lee et al., In0.5Ga0.5As quantum dot intermixing and evaporation in GaAs capping layergrowth, J APPL PHYS, 84(12), 1998, pp. 6686-6688