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Results: 1-25 | 26-40
Results: 1-25/40
Catalytic growth of high quality GaN micro-crystals
Authors: Ahn, SH Lee, SH Nahm, KS Suh, EK Hong, MH
Citation: Sh. Ahn et al., Catalytic growth of high quality GaN micro-crystals, J CRYST GR, 234(1), 2002, pp. 70-76
Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells
Authors: Lee, WH Kim, KS Yang, GM Hong, CH Lim, KY Suh, EK Lee, HJ Cho, HK Lee, JY
Citation: Wh. Lee et al., Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells, J KOR PHYS, 39(1), 2001, pp. 136-140
Nano-scale island (dot)-induced optical emission in InGaN quantum wells
Authors: Kim, KS Lee, WH Kim, CS Yang, GM Hong, CH Suh, EK Lim, KY Lee, HJ Cho, HK Lee, JY Yang, M Lee, YH Seo, JM
Citation: Ks. Kim et al., Nano-scale island (dot)-induced optical emission in InGaN quantum wells, J KOR PHYS, 39(1), 2001, pp. 141-146
Effects of growth interruption on high indium content InGaN/GaN multi quantum wells
Authors: Cheong, MG Choi, RJ Kim, CS Yoon, HS Hong, CH Suh, EK Lee, HJ Cho, HK Lee, JY
Citation: Mg. Cheong et al., Effects of growth interruption on high indium content InGaN/GaN multi quantum wells, J KOR PHYS, 38(6), 2001, pp. 701-705
Multi-emission from InGaN/GaN multi-quantum wells grown on hexagonal GaN microstructures
Authors: Kim, CS Hong, YK Hong, CH Suh, EK Lee, HJ Kim, MH Cho, HK Lee, JY
Citation: Cs. Kim et al., Multi-emission from InGaN/GaN multi-quantum wells grown on hexagonal GaN microstructures, PHYS ST S-B, 228(1), 2001, pp. 183-186
Effect of isoelectronic in doping on deep levels in GaN grown by MOCVD
Authors: Cho, HK Kim, CS Hong, YK Kim, YW Hong, CH Suh, EK Lee, HJ
Citation: Hk. Cho et al., Effect of isoelectronic in doping on deep levels in GaN grown by MOCVD, PHYS ST S-B, 228(1), 2001, pp. 231-234
High-quality In0.3Ga0.7N/GaN quantum well growth and their optical and structural properties
Authors: Cheong, MG Suh, EK Lee, HJ
Citation: Mg. Cheong et al., High-quality In0.3Ga0.7N/GaN quantum well growth and their optical and structural properties, SEMIC SCI T, 16(9), 2001, pp. 783-788
Characterization of GaN thin film growth on 3C-SiC/Si(111) substrate usingvarious buffer layers
Authors: Park, CI Kang, JH Kim, KC Suh, EK Lim, KY Nahm, KS
Citation: Ci. Park et al., Characterization of GaN thin film growth on 3C-SiC/Si(111) substrate usingvarious buffer layers, J CRYST GR, 224(3-4), 2001, pp. 190-194
Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
Authors: Cheong, MG Yoon, HS Choi, RJ Kim, CS Yu, SW Hong, CH Suh, EK Lee, HJ
Citation: Mg. Cheong et al., Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition, J APPL PHYS, 90(11), 2001, pp. 5642-5646
Yellow luminescence and persistent photoconductivity of undoped n-type GaN
Authors: Chung, SJ Cha, OH Kim, YS Hong, CH Lee, HJ Jeong, MS White, JO Suh, EK
Citation: Sj. Chung et al., Yellow luminescence and persistent photoconductivity of undoped n-type GaN, J APPL PHYS, 89(10), 2001, pp. 5454-5459
Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy
Authors: Jeong, MS Kim, JY Kim, YW White, JO Suh, EK Hong, CH Lee, HJ
Citation: Ms. Jeong et al., Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy, APPL PHYS L, 79(7), 2001, pp. 976-978
Spatial variation of photoluminescence and related defects in InGaN/GaN quantum wells
Authors: Jeong, MS Kim, YW White, JO Suh, EK Cheong, MG Kim, CS Hong, CH Lee, HJ
Citation: Ms. Jeong et al., Spatial variation of photoluminescence and related defects in InGaN/GaN quantum wells, APPL PHYS L, 79(21), 2001, pp. 3440-3442
Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications
Authors: Kim, KS Hong, CH Lee, WH Kim, CS Cha, OH Yang, GM Suh, EK Lim, KY Lee, HJ Cho, HK Lee, JY Seo, JM
Citation: Ks. Kim et al., Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications, MRS I J N S, 5, 2000, pp. NIL_757-NIL_761
Emission mechanism of the yellow luminescence in undoped GaN
Authors: Chung, SJ Cha, OH Hong, CH Suh, EK Lee, HJ Kim, YS Kim, BH
Citation: Sj. Chung et al., Emission mechanism of the yellow luminescence in undoped GaN, J KOR PHYS, 37(6), 2000, pp. 1003-1006
Effect of a buffer layer on GaN growth on a Si(111) substrate with a 3C-SiC intermediate layer
Authors: Park, CI Kang, JH Kim, KC Suh, EK Lim, KY Nahm, KS
Citation: Ci. Park et al., Effect of a buffer layer on GaN growth on a Si(111) substrate with a 3C-SiC intermediate layer, J KOR PHYS, 37(6), 2000, pp. 1007-1011
Growth temperature dependence of substitutional carbon incorporation in Si1-yCy alloys
Authors: Ihm, SH Jeong, MS Seok, JH Lee, CH Kim, JY Suh, EK Lee, HJ Yu, SC
Citation: Sh. Ihm et al., Growth temperature dependence of substitutional carbon incorporation in Si1-yCy alloys, J KOR PHYS, 36(4), 2000, pp. 237-240
High-temperature vapor-phase growth and characterization of thick GaN by the direct reaction of Ga and NH3
Authors: Yang, SH Nahm, KS Hahn, YB Lee, YS Jeong, MS Suh, EK
Citation: Sh. Yang et al., High-temperature vapor-phase growth and characterization of thick GaN by the direct reaction of Ga and NH3, J KOR PHYS, 36(3), 2000, pp. 182-187
Photoelectric transient process in Si1-xGex/Si superlattices
Authors: Jeong, MS Cha, OH Huang, XL Kim, JY Suh, EK Lee, HJ
Citation: Ms. Jeong et al., Photoelectric transient process in Si1-xGex/Si superlattices, SEMIC SCI T, 15(2), 2000, pp. 130-134
Growth temperature dependence on the formation of carbon-induced Ge quantum dots
Authors: Kim, JY Ihm, SH Seok, JH Lee, CH Lee, YH Suh, EK Lee, HJ
Citation: Jy. Kim et al., Growth temperature dependence on the formation of carbon-induced Ge quantum dots, THIN SOL FI, 369(1-2), 2000, pp. 96-99
Structural and optical properties of GaN films grown by the direct reaction of Ga and NH3 in a CVD reactor
Authors: Yang, SH Ahn, SH Jeong, MS Nahm, KS Suh, EK Lim, KY
Citation: Sh. Yang et al., Structural and optical properties of GaN films grown by the direct reaction of Ga and NH3 in a CVD reactor, SOL ST ELEC, 44(9), 2000, pp. 1655-1661
Photoconductivity of 3,5-dinitrobenzoates of poly[1-(p-methoxyphenyl)penta-1,3-diyn-5-ol] and poly[1-(p-N,N-dimethylaminophenyl)penta-1,3-diyn-5-ol]
Authors: Shim, SC Suh, MC Suh, SC Huang, XL Suh, EK
Citation: Sc. Shim et al., Photoconductivity of 3,5-dinitrobenzoates of poly[1-(p-methoxyphenyl)penta-1,3-diyn-5-ol] and poly[1-(p-N,N-dimethylaminophenyl)penta-1,3-diyn-5-ol], POLYMER, 41(2), 2000, pp. 467-472
Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD
Authors: Cheong, MG Kim, KS Namgung, NW Han, MS Yang, GM Hong, CH Suh, EK Lim, KY Lee, HJ Yoshikawa, A
Citation: Mg. Cheong et al., Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD, J CRYST GR, 221, 2000, pp. 734-738
Comparative analysis of characteristics of Si, Mg, and undoped GaN
Authors: Kim, KS Oh, CS Lee, WH Lee, KJ Yang, GM Hong, CH Suh, EK Lim, KY Lee, HJ Byun, DJ
Citation: Ks. Kim et al., Comparative analysis of characteristics of Si, Mg, and undoped GaN, J CRYST GR, 210(4), 2000, pp. 505-510
Growth temperature dependence of substitutional carbon incorporation in Si1-yCy alloys and Si1-yCy/Si multiple quantum wells
Authors: Jeong, MS Ihm, SH Seok, JH Cha, OH Kim, JY Suh, EK Lee, HJ
Citation: Ms. Jeong et al., Growth temperature dependence of substitutional carbon incorporation in Si1-yCy alloys and Si1-yCy/Si multiple quantum wells, J CRYST GR, 209(4), 2000, pp. 789-794
Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers
Authors: Cheong, MG Kim, KS Oh, CS Namgung, NW Yang, GM Hong, CH Lim, KY Suh, EK Nahm, KS Lee, HJ Lim, DH Yoshikawa, A
Citation: Mg. Cheong et al., Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers, APPL PHYS L, 77(16), 2000, pp. 2557-2559
Risultati: 1-25 | 26-40