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Citation: Mg. Cheong et al., High-quality In0.3Ga0.7N/GaN quantum well growth and their optical and structural properties, SEMIC SCI T, 16(9), 2001, pp. 783-788
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Park, CI
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Authors:
Cheong, MG
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Jeong, MS
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Citation: Ms. Jeong et al., Spatial variation of photoluminescence and related defects in InGaN/GaN quantum wells, APPL PHYS L, 79(21), 2001, pp. 3440-3442
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Kim, KS
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Citation: Ks. Kim et al., Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications, MRS I J N S, 5, 2000, pp. NIL_757-NIL_761
Authors:
Park, CI
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Citation: Ci. Park et al., Effect of a buffer layer on GaN growth on a Si(111) substrate with a 3C-SiC intermediate layer, J KOR PHYS, 37(6), 2000, pp. 1007-1011
Authors:
Yang, SH
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Citation: Sh. Yang et al., High-temperature vapor-phase growth and characterization of thick GaN by the direct reaction of Ga and NH3, J KOR PHYS, 36(3), 2000, pp. 182-187
Authors:
Yang, SH
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Suh, EK
Lim, KY
Citation: Sh. Yang et al., Structural and optical properties of GaN films grown by the direct reaction of Ga and NH3 in a CVD reactor, SOL ST ELEC, 44(9), 2000, pp. 1655-1661
Authors:
Shim, SC
Suh, MC
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Suh, EK
Citation: Sc. Shim et al., Photoconductivity of 3,5-dinitrobenzoates of poly[1-(p-methoxyphenyl)penta-1,3-diyn-5-ol] and poly[1-(p-N,N-dimethylaminophenyl)penta-1,3-diyn-5-ol], POLYMER, 41(2), 2000, pp. 467-472
Authors:
Jeong, MS
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Cha, OH
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Citation: Ms. Jeong et al., Growth temperature dependence of substitutional carbon incorporation in Si1-yCy alloys and Si1-yCy/Si multiple quantum wells, J CRYST GR, 209(4), 2000, pp. 789-794
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Cheong, MG
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Oh, CS
Namgung, NW
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Suh, EK
Nahm, KS
Lee, HJ
Lim, DH
Yoshikawa, A
Citation: Mg. Cheong et al., Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers, APPL PHYS L, 77(16), 2000, pp. 2557-2559