Citation: S. Muto et A. Tackeuchi, CARRIER DYNAMICS OF QUANTUM-CONFINED STRUCTURES, Materials science & engineering. R, Reports, 22(3), 1998, pp. 79-111
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MATSUI Y
OGAWA K
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SUZUKI A
Citation: Y. Matsui et al., FEMTOSECOND SATURABLE ABSORPTION RECOVERY IN A TYPE-II TUNNELING BI-QUANTUM WELL FOR LONG-WAVELENGTH OPERATION, Physica status solidi. b, Basic research, 204(1), 1997, pp. 416-419
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Citation: S. Adachi et al., POLARIZATION CHOICES IN EXCITON-BIEXCITON SYSTEM OF GAAS QUANTUM-WELLS, Physical review. B, Condensed matter, 55(3), 1997, pp. 1654-1660
Authors:
NISHIKAWA Y
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Citation: Y. Nishikawa et al., ULTRAFAST ALL-OPTICAL SPIN POLARIZATION SWITCH USING QUANTUM-WELL ETALON, IEEE journal of selected topics in quantum electronics, 2(3), 1996, pp. 661-667
Authors:
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IMAMURA K
TAKATSU M
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Citation: N. Yokoyama et al., RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS - PRESENT STATUS AND FUTURE-PROSPECTS, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 354(1717), 1996, pp. 2399-2411
Authors:
ADACHI S
TAKEYAMA S
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Citation: S. Adachi et al., ULTRAFAST OPTICAL-SAMPLING SPECTROSCOPY OF EXCITON DYNAMICS IN QUANTUM-WELLS, Progress in crystal growth and characterization of materials, 33(1-3), 1996, pp. 117-120
Authors:
ADACHI S
TAKEYAMA S
TAKAGI Y
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MUTO S
Citation: S. Adachi et al., ULTRAFAST OPTICAL-SAMPLING PUMP-PROBE MEASUREMENT OF EXCITON SPIN RELAXATION IN GAAS ALGAAS QUANTUM-WELLS/, Applied physics letters, 68(7), 1996, pp. 964-966
Citation: A. Tackeuchi et al., ROOM-TEMPERATURE ELECTRON-SPIN DYNAMICS IN GAAS ALGAAS QUANTUM-WELLS/, Applied physics letters, 68(6), 1996, pp. 797-799
Authors:
NISHIKAWA Y
NAKATA Y
TACKEUCHI A
MUTO S
WADA O
Citation: Y. Nishikawa et al., LARGE LATERAL MODULATION IN INAS GAAS INPLANE STRAINED SUPERLATTICE ON SLIGHTLY MISORIENTED (110)INP SUBSTRATE/, JPN J A P 2, 34(7B), 1995, pp. 915-917
Authors:
TACKEUCHI A
HEBERLE AP
RUHLE WW
KOHLER K
MUTO S
Citation: A. Tackeuchi et al., BAND-GAP RENORMALIZATION AND EXCITONIC EFFECTS IN TUNNELING IN ASYMMETRIC DOUBLE-QUANTUM WELLS, JPN J A P 2, 34(5A), 1995, pp. 543-546
Authors:
TACKEUCHI A
NAKATA Y
MUTO S
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Citation: A. Tackeuchi et al., NEAR-1.3-MU-M HIGH-INTENSITY PHOTOLUMINESCENCE AT ROOM-TEMPERATURE BYINAS GAAS MULTI-COUPLED QUANTUM DOTS/, JPN J A P 2, 34(4A), 1995, pp. 405-407
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TACKEUCHI A
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MUTO S
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Citation: A. Tackeuchi et al., TIME-RESOLVED STUDY OF CARRIER TRANSFER AMONG INAS GAAS MULTI-COUPLEDQUANTUM DOTS/, JPN J A P 2, 34(11A), 1995, pp. 1439-1441
Authors:
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Citation: Y. Nishikawa et al., PERFORMANCE OF ALL-OPTICAL SWITCH UTILIZING THE SPIN-DEPENDENT TRANSIENT ROTATION IN A MULTIPLE-QUANTUM-WELL ETALON, JPN J A P 2, 34(10A), 1995, pp. 1283-1285
Citation: A. Tackeuchi et al., PICOSECOND ALL-OPTICAL SWITCHING USING TUNNELING AND SPIN-RELAXATION IN QUANTUM-WELL STRUCTURES, IEE proceedings. Optoelectronics, 10(4), 1995, pp. 561-574
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UEDA O
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MUTO S
Citation: Y. Nakata et al., INGAAS INALAS INPLANE SUPERLATTICES GROWN ON SLIGHTLY MISORIENTED (110) INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 150(1-4), 1995, pp. 341-345
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MUTO S
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Citation: Y. Nishikawa et al., ALL-OPTICAL PICOSECOND SWITCHING OF A QUANTUM-WELL ETALON USING SPIN-POLARIZATION RELAXATION, Applied physics letters, 66(7), 1995, pp. 839-841
Authors:
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INATA T
TACKEUCHI A
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NAKAMURA S
MUTO S
Citation: Y. Sugiyama et al., STUDY OF TUNNELING TIME IN TUNNELING BI-QUANTUM-WELL AND RESONANT-TUNNELING BARRIER STRUCTURES, Microwave and optical technology letters, 7(3), 1994, pp. 85-88
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Citation: Ap. Heberle et al., DEPENDENCE OF RESONANT ELECTRON AND HOLE TUNNELING TIMES BETWEEN QUANTUM-WELLS ON BARRIER THICKNESS, Semiconductor science and technology, 9(5), 1994, pp. 519-522
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ADACHI S
TAKEYAMA S
TACKEUCHI A
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Citation: Y. Takagi et al., ULTRAFAST EXCITON SPIN RELAXATION IN GAAS ALGAAS AND CDMNTE MULTIPLE-QUANTUM WELLS/, Journal of luminescence, 58(1-6), 1994, pp. 202-205
Citation: A. Tackeuchi et al., PICOSECOND OPTICAL SIGNAL RECOVERY IN TUNNELING BI-QUANTUM WELL STRUCTURE, Fujitsu Scientific and Technical Journal, 30(2), 1994, pp. 188-194
Authors:
ENDOH A
ARIMOTO H
KITADA H
TACKEUCHI A
MUTO S
Citation: A. Endoh et al., EFFECT OF REACTIVE ION-BEAM ETCHING DAMAGE ON EXCITON ABSORPTION RECOVERY-TIME OF MULTIPLE QUANTUM-WELL WIRES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 183-186
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KITADA H
SUGIYAMA Y
TACKEUCHI A
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MUTO S
Citation: H. Arimoto et al., 10-NM-WIRE FABRICATION IN GAAS ALGAAS MQWS BY CL2 REACTIVE ION-BEAM ETCHING USING SIO2 SIDEWALL MASKS/, Microelectronic engineering, 21(1-4), 1993, pp. 303-306