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Results: 1-16 |
Results: 16
ADVANCES IN PULSED-LASER DEPOSITION OF NITRIDES AND THEIR INTEGRATIONWITH OXIDES
Authors: VISPUTE RD TALYANSKY V SHARMA RP CHOOPUN S DOWNES M VENKATESAN T LI YX SALAMANCARIBA LG ILIADIS AA JONES KA MCGARRITY J
Citation: Rd. Vispute et al., ADVANCES IN PULSED-LASER DEPOSITION OF NITRIDES AND THEIR INTEGRATIONWITH OXIDES, Applied surface science, 129, 1998, pp. 431-439
FABRICATION AND CHARACTERIZATION OF EPITAXIAL ALN TIN BILAYERS ON SAPPHIRE/
Authors: TALYANSKY V VISPUTE RD RAMESH R SHARMA RP VENKATESAN T LI YX SALAMANCARIBA LG WOOD MC LAREAU RT JONES KA ILIADIS AA
Citation: V. Talyansky et al., FABRICATION AND CHARACTERIZATION OF EPITAXIAL ALN TIN BILAYERS ON SAPPHIRE/, Thin solid films, 323(1-2), 1998, pp. 37-41
AIN AS AN ENCAPSULATE FOR ANNEALING SIC
Authors: JONES KA XIE K ECKART DW WOOD MC TALYANSKY V VISPUTE RD VENKATESAN T WONGCHOTIGUL K SPENCER M
Citation: Ka. Jones et al., AIN AS AN ENCAPSULATE FOR ANNEALING SIC, Journal of applied physics, 83(12), 1998, pp. 8010-8015
HETEROEPITAXY OF ZNO ON GAN AND ITS IMPLICATIONS FOR FABRICATION OF HYBRID OPTOELECTRONIC DEVICES
Authors: VISPUTE RD TALYANSKY V CHOOPUN S SHARMA RP VENKATESAN T HE M TANG X HALPERN JB SPENCER MG LI YX SALAMANCARIBA LG ILIADIS AA JONES KA
Citation: Rd. Vispute et al., HETEROEPITAXY OF ZNO ON GAN AND ITS IMPLICATIONS FOR FABRICATION OF HYBRID OPTOELECTRONIC DEVICES, Applied physics letters, 73(3), 1998, pp. 348-350
STUDIES OF FERROELECTRIC FIELD EFFECTS IN PT PB(ZR0.5TI0.5)O-3/YBA2CU3O7 HETEROSTRUCTURES/
Authors: DONG ZW TRAJANOVIC Z BOETTCHER T TAKEUCHI I TALYANSKY V CHEN CH SHARMA RP RAMESH R VENKATESAN T
Citation: Zw. Dong et al., STUDIES OF FERROELECTRIC FIELD EFFECTS IN PT PB(ZR0.5TI0.5)O-3/YBA2CU3O7 HETEROSTRUCTURES/, IEEE transactions on applied superconductivity, 7(2), 1997, pp. 3516-3519
LOW-TEMPERATURE SCANNING-TIP MICROWAVE NEAR-FIELD MICROSCOPY OF YBA2CU3O7-X FILMS
Authors: TAKEUCHI I WEI T DUEWER F YOO YK XIANG XD TALYANSKY V PAI SP CHEN GJ VENKATESAN T
Citation: I. Takeuchi et al., LOW-TEMPERATURE SCANNING-TIP MICROWAVE NEAR-FIELD MICROSCOPY OF YBA2CU3O7-X FILMS, Applied physics letters, 71(14), 1997, pp. 2026-2028
SPIN-POLARIZED QUASI-PARTICLE INJECTION DEVICES USING AU YBA2CU3O7/LAALO3/ND0.7SR0.3/MNO3 HETEROSTRUCTURES/
Authors: DONG ZW RAMESH R VENKATESAN T JOHNSON M CHEN ZY PAI SP TALYANSKY V SHARMA RP SHREEKALA R LOBB CJ GREENE RL
Citation: Zw. Dong et al., SPIN-POLARIZED QUASI-PARTICLE INJECTION DEVICES USING AU YBA2CU3O7/LAALO3/ND0.7SR0.3/MNO3 HETEROSTRUCTURES/, Applied physics letters, 71(12), 1997, pp. 1718-1720
GROWTH OF EPITAXIAL GAN FILMS BY PULSED-LASER DEPOSITION
Authors: VISPUTE RD TALYANSKY V SHARMA RP CHOOPUN S DOWNES M VENKATESAN T JONES KA ILIADIS AA KHAN MA YANG JW
Citation: Rd. Vispute et al., GROWTH OF EPITAXIAL GAN FILMS BY PULSED-LASER DEPOSITION, Applied physics letters, 71(1), 1997, pp. 102-104
HIGH-QUALITY CRYSTALLINE ZNO BUFFER LAYERS ON SAPPHIRE(001) BY PULSED-LASER DEPOSITION FOR III-V NITRIDES
Authors: VISPUTE RD TALYANSKY V TRAJANOVIC Z CHOOPUN S DOWNES M SHARMA RP VENKATESAN T WOODS MC LAREAU RT JONES KA ILIADIS AA
Citation: Rd. Vispute et al., HIGH-QUALITY CRYSTALLINE ZNO BUFFER LAYERS ON SAPPHIRE(001) BY PULSED-LASER DEPOSITION FOR III-V NITRIDES, Applied physics letters, 70(20), 1997, pp. 2735-2737
EXPERIMENTAL PROOF OF THE ELECTRONIC CHARGE-TRANSFER MECHANISM IN A YBA2CU3O7-X-BASED FIELD-EFFECT TRANSISTOR
Authors: TALYANSKY V OGALE SB TAKEUCHI I DOUGHTY C VENKATESAN T
Citation: V. Talyansky et al., EXPERIMENTAL PROOF OF THE ELECTRONIC CHARGE-TRANSFER MECHANISM IN A YBA2CU3O7-X-BASED FIELD-EFFECT TRANSISTOR, Physical review. B, Condensed matter, 53(21), 1996, pp. 14575-14580
UNUSUAL ELECTRIC-FIELD EFFECTS IN ND0.7SR0.3MNO3
Authors: OGALE SB TALYANSKY V CHEN CH RAMESH R GREENE RL VENKATESAN T
Citation: Sb. Ogale et al., UNUSUAL ELECTRIC-FIELD EFFECTS IN ND0.7SR0.3MNO3, Physical review letters, 77(6), 1996, pp. 1159-1162
RESPONSE TO AN ELECTRIC-FIELD OF ND0.7SR0.3MNO3 FILMS IN A MOSFET CONFIGURATION
Authors: OGALE SB TALYANSKY V XIONG GC SHARMA RP RAMESH R GREENE RL VENKATESAN T
Citation: Sb. Ogale et al., RESPONSE TO AN ELECTRIC-FIELD OF ND0.7SR0.3MNO3 FILMS IN A MOSFET CONFIGURATION, Journal of applied physics, 79(8), 1996, pp. 4545-4545
ION-IMPLANTATION INDUCED ENHANCEMENT OF MAGNETORESISTANCE IN LA0.67CA0.33MNO3
Authors: CHEN CH TALYANSKY V KWON C RAJESWARI M SHARMA RP RAMESH R VENKATESAN T MELNGAILIS J ZHANG Z CHU WK
Citation: Ch. Chen et al., ION-IMPLANTATION INDUCED ENHANCEMENT OF MAGNETORESISTANCE IN LA0.67CA0.33MNO3, Applied physics letters, 69(20), 1996, pp. 3089-3091
MODIFIED DEPOSITION PROCEDURE FOR HIGH-QUALITY YBA2CU3O7-X SRTIO3 BILAYERS/
Authors: TALYANSKY V PETERSEN K DOUGHTY C XI XX VENKATESAN T
Citation: V. Talyansky et al., MODIFIED DEPOSITION PROCEDURE FOR HIGH-QUALITY YBA2CU3O7-X SRTIO3 BILAYERS/, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 2869-2871
SUPERCONDUCTING FIELD-EFFECT DEVICES WITH HIGH TRANSITION-TEMPERATUREAND CRITICAL-CURRENT DENSITY
Authors: DOUGHTY C TALYANSKY V KWON C FINDIKOGLU AT XI XX VENKATESAN T
Citation: C. Doughty et al., SUPERCONDUCTING FIELD-EFFECT DEVICES WITH HIGH TRANSITION-TEMPERATUREAND CRITICAL-CURRENT DENSITY, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 2872-2874
ELECTRIC-FIELD EFFECT ON ULTRATHIN YBA2CU3O7-DELTA GRAIN-BOUNDARY JOSEPHSON-JUNCTIONS
Authors: PETERSEN K TAKEUCHI I TALYANSKY V DOUGHTY C XI XX VENKATESAN T
Citation: K. Petersen et al., ELECTRIC-FIELD EFFECT ON ULTRATHIN YBA2CU3O7-DELTA GRAIN-BOUNDARY JOSEPHSON-JUNCTIONS, Applied physics letters, 67(10), 1995, pp. 1477-1479
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