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Results: 1-13 |
Results: 13
MOLECULAR-BEAM EPITAXY OF SRTIO3 FILMS ON SI(100)-2X1 WITH SRO BUFFERLAYER
Authors: TAMBO T NAKAMURA T MAEDA K UEBA H TATSUYAMA C
Citation: T. Tambo et al., MOLECULAR-BEAM EPITAXY OF SRTIO3 FILMS ON SI(100)-2X1 WITH SRO BUFFERLAYER, JPN J A P 1, 37(8), 1998, pp. 4454-4459
IN(4 X-3) RECONSTRUCTION MEDIATED HETEROEPITAXIAL GROWTH OF INSB ON SI(001) SUBSTRATE
Authors: RAO BV ATOJI M LI DM OKAMOTO T TAMBO T TATSUYAMA C
Citation: Bv. Rao et al., IN(4 X-3) RECONSTRUCTION MEDIATED HETEROEPITAXIAL GROWTH OF INSB ON SI(001) SUBSTRATE, JPN J A P 2, 37(11A), 1998, pp. 1297-1300
THE ROLE OF (4 X-3) SURFACE RECONSTRUCTION INDUCED BY IN ADSORPTION FOR THE HETEROEPITAXIAL GROWTH OF INSB ON SI(001)-2X1 SURFACE
Authors: LI DM ATOJI M YAMAZAKI M OKAMOTO T TAMBO T TATSUYAMA C
Citation: Dm. Li et al., THE ROLE OF (4 X-3) SURFACE RECONSTRUCTION INDUCED BY IN ADSORPTION FOR THE HETEROEPITAXIAL GROWTH OF INSB ON SI(001)-2X1 SURFACE, Applied surface science, 132, 1998, pp. 101-106
INITIAL-STAGE OF THE GROWTH OF GAS THIN-FILMS ON GAAS
Authors: ISLAM ABMO ASAI K LIM KK TAMBO T TATSUYAMA C
Citation: Abmo. Islam et al., INITIAL-STAGE OF THE GROWTH OF GAS THIN-FILMS ON GAAS, Applied surface science, 123, 1998, pp. 508-512
INTERFACE FORMATION BETWEEN LAYERED-COMPOUND GAS AND GAAS(111)A SURFACE
Authors: ISLAM ABMO ASAI K LIM KK TAMBO T TATSUYAMA C
Citation: Abmo. Islam et al., INTERFACE FORMATION BETWEEN LAYERED-COMPOUND GAS AND GAAS(111)A SURFACE, Surface science, 416(1-2), 1998, pp. 295-304
TUNING THE EMISSION WAVELENGTH OF SI NANOCRYSTALS IN SIO2 BY OXIDATION
Authors: BRONGERSMA ML POLMAN A MIN KS BOER E TAMBO T ATWATER HA
Citation: Ml. Brongersma et al., TUNING THE EMISSION WAVELENGTH OF SI NANOCRYSTALS IN SIO2 BY OXIDATION, Applied physics letters, 72(20), 1998, pp. 2577-2579
GROWTH OF INSB FILMS ON A SI(001) SUBSTRATE WITH GE BUFFER LAYER
Authors: MORI M TSUBOSAKI Y TAMBO T UEBA H TATSUYAMA C
Citation: M. Mori et al., GROWTH OF INSB FILMS ON A SI(001) SUBSTRATE WITH GE BUFFER LAYER, Applied surface science, 117, 1997, pp. 512-517
SUBSTRATE ORIENTATION DEPENDENCE OF THE GROWTH OF GASE THIN-FILMS ON GAAS
Authors: TATSUYAMA C NISHIWAKI H ASAI K LIM KK TAMBO T UEBA H
Citation: C. Tatsuyama et al., SUBSTRATE ORIENTATION DEPENDENCE OF THE GROWTH OF GASE THIN-FILMS ON GAAS, Applied surface science, 117, 1997, pp. 523-529
SPECULAR BEAM INTENSITY AND SURFACE-MORPHOLOGY OF BSCO FILMS GROWN BYMBE
Authors: TAMBO T KONISHI S TAKEDA S YAMADA N UEBA H TATSUYAMA C
Citation: T. Tambo et al., SPECULAR BEAM INTENSITY AND SURFACE-MORPHOLOGY OF BSCO FILMS GROWN BYMBE, Thin solid films, 300(1-2), 1997, pp. 223-227
IN-SITU REAL-TIME ANALYSIS OF ALLOY FILM COMPOSITION AND SEGREGATION DYNAMICS WITH PARALLEL DETECTION REFLECTION ELECTRON-ENERGY-LOSS SPECTROSCOPY
Authors: AHN CC YOSHINO H TAMBO T WONG SS HE G TAYLOR ME ATWATER HA
Citation: Cc. Ahn et al., IN-SITU REAL-TIME ANALYSIS OF ALLOY FILM COMPOSITION AND SEGREGATION DYNAMICS WITH PARALLEL DETECTION REFLECTION ELECTRON-ENERGY-LOSS SPECTROSCOPY, Applied physics letters, 71(18), 1997, pp. 2653-2655
HETEROEPITAXIAL GROWTH OF INSB ON SI(001) SURFACE VIA GE BUFFER LAYERS
Authors: MORI M LI DM YAMAZAKI M TAMBO T UEBA H TATSUYAMA C
Citation: M. Mori et al., HETEROEPITAXIAL GROWTH OF INSB ON SI(001) SURFACE VIA GE BUFFER LAYERS, Applied surface science, 104, 1996, pp. 563-569
GA-SE FILMS GROWN ON A GAAS(001) SURFACE AT HIGH-TEMPERATURE USING A THERMAL EVAPORATION OF GASE
Authors: IZUMI T NISHIWAKI H TAMBO T TATSUYAMA C
Citation: T. Izumi et al., GA-SE FILMS GROWN ON A GAAS(001) SURFACE AT HIGH-TEMPERATURE USING A THERMAL EVAPORATION OF GASE, Applied surface science, 104, 1996, pp. 570-574
GROWTH OF GASE LAYERED COMPOUND ON A GAAS (001) SURFACE
Authors: FUJITA K IZUMI T OHSAKI K TAMBO T UEBA H TATSUYAMA C
Citation: K. Fujita et al., GROWTH OF GASE LAYERED COMPOUND ON A GAAS (001) SURFACE, Thin solid films, 247(1), 1994, pp. 134-139
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