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Results: 1-25/31
Authors:
BROOKS RD
BERMAN GE
DAVIDSON SR
TAN TY
Citation: Rd. Brooks et al., IS THERE A COMMON RESPONSE IN AUSTRALIAN BILATERAL EXCHANGE-RATES FOLLOWING CURRENT ACCOUNT ANNOUNCEMENTS, Applied economics letters, 5(10), 1998, pp. 645-648
Authors:
KASTNER G
GOSELE U
TAN TY
Citation: G. Kastner et al., A MODEL OF STRAIN RELAXATION IN HETEROEPITAXIAL FILMS ON COMPLIANT SUBSTRATES, Applied physics A: Materials science & processing, 66(1), 1998, pp. 13-22
Authors:
PLEKHANOV PS
GOSELE UM
TAN TY
Citation: Ps. Plekhanov et al., MODELING OF NUCLEATION AND GROWTH OF VOIDS IN SILICON, Journal of applied physics, 84(2), 1998, pp. 718-726
Authors:
SCHULTZ M
EGGER U
SCHOLZ R
BREITENSTEIN O
GOSELE U
TAN TY
Citation: M. Schultz et al., EXPERIMENTAL AND COMPUTER-SIMULATION STUDIES OF DIFFUSION MECHANISMS ON THE ARSENIC SUBLATTICE OF GALLIUM-ARSENIDE, Journal of applied physics, 83(10), 1998, pp. 5295-5301
Authors:
TAN TY
Citation: Ty. Tan, MASS-TRANSPORT EQUATIONS UNIFYING DESCRIPTIONS OF ISOTHERMAL DIFFUSION, THERMOMIGRATION, SEGREGATION, AND POSITION-DEPENDENT DIFFUSIVITY, Applied physics letters, 73(18), 1998, pp. 2678-2680
Authors:
SCHOLZ R
GOSELE U
HUH JY
TAN TY
Citation: R. Scholz et al., CARBON-INDUCED UNDERSATURATION OF SILICON SELF-INTERSTITIALS, Applied physics letters, 72(2), 1998, pp. 200-202
Authors:
TONG QY
SCHOLZ R
GOSELE U
LEE TH
HUANG LJ
CHAO YL
TAN TY
Citation: Qy. Tong et al., A SMARTER-CUT APPROACH TO LOW-TEMPERATURE SILICON LAYER TRANSFER, Applied physics letters, 72(1), 1998, pp. 49-51
Authors:
TAN TY
GOSELE U
Citation: Ty. Tan et U. Gosele, TWIST WAFER BONDED FIXED-FILM VERSUS COMPLIANT SUBSTRATES - CORRELATED MISFIT DISLOCATION GENERATION AND CONTAMINANT GETTERING, Applied physics A: Materials science & processing, 64(6), 1997, pp. 631-633
Authors:
SCHROER E
HOPFE S
WERNER P
GOSELE U
DUSCHER G
RUHLE M
TAN TY
Citation: E. Schroer et al., OXIDE PRECIPITATION AT SILICON GRAIN-BOUNDARIES, Applied physics letters, 70(3), 1997, pp. 327-329
Authors:
TAN TY
PLEKHANOV P
GOSELE UM
Citation: Ty. Tan et al., NUCLEATION BARRIER OF VOIDS AND DISLOCATION LOOPS IN SILICON, Applied physics letters, 70(13), 1997, pp. 1715-1717
Authors:
TAN TY
GOSELE UM
Citation: Ty. Tan et Um. Gosele, EFFECTS OF P-TYPE DOPANTS ON ENHANCING ALAS GAAS SUPERLATTICE DISORDERING/, Materials chemistry and physics, 44(1), 1996, pp. 45-50
Authors:
CHEN CH
TAN TY
Citation: Ch. Chen et Ty. Tan, ON THE VALIDITY OF THE AMPHOTERIC-DEFECT MODEL IN GALLIUM-ARSENIDE AND A CRITERION FOR FERMI-LEVEL PINNING BY DEFECTS, Applied physics A: Materials science & processing, 61(4), 1995, pp. 397-405
Authors:
TAN TY
Citation: Ty. Tan, POINT-DEFECTS AND DIFFUSION MECHANISMS PERTINENT TO THE GA SUBLATTICEOF GAAS, Materials chemistry and physics, 40(4), 1995, pp. 245-252
Authors:
TAN TY
Citation: Ty. Tan, ASSUAGING THE SIKHS - GOVERNMENT RESPONSES TO THE AKALI MOVEMENT, 1920-1925, Modern Asian studies, 29, 1995, pp. 655-703
Authors:
HUH JY
GOSELE U
TAN TY
Citation: Jy. Huh et al., COPRECIPITATION OF OXYGEN AND CARBON IN CZOCHRALSKI SILICON - A GROWTH KINETIC APPROACH, Journal of applied physics, 78(10), 1995, pp. 5926-5935
Authors:
JOSHI SM
GOSELE UM
TAN TY
Citation: Sm. Joshi et al., IMPROVEMENT OF MINORITY-CARRIER DIFFUSION LENGTH IN SI BY AL GETTERING, Journal of applied physics, 77(8), 1995, pp. 3858-3863
Authors:
HUY JY
TAN TY
GOSELE U
Citation: Jy. Huy et al., MODEL OF PARTITIONING OF POINT-DEFECT SPECIES DURING PRECIPITATION OFA MISFITTING COMPOUND IN CZOCHRALSKI SILICON, Journal of applied physics, 77(11), 1995, pp. 5563-5571
Authors:
TONG QY
KAIDO G
TONG L
REICHE M
SHI F
STEINKIRCHNER J
TAN TY
GOSELE U
Citation: Qy. Tong et al., A SIMPLE CHEMICAL TREATMENT FOR PREVENTING THERMAL BUBBLES IN SILICON-WAFER BONDING, Journal of the Electrochemical Society, 142(10), 1995, pp. 201-203
Authors:
UEMATSU M
WERNER P
SCHULTZ M
TAN TY
GOSELE UM
Citation: M. Uematsu et al., SULFUR DIFFUSION AND THE INTERSTITIAL CONTRIBUTION TO ARSENIC SELF-DIFFUSION IN GAAS, Applied physics letters, 67(19), 1995, pp. 2863-2865
Authors:
TAYLOR WJ
GOSELE UM
TAN TY
Citation: Wj. Taylor et al., PRECIPITATE STRAIN RELIEF VIA POINT-DEFECT INTERACTION - MODELS FOR SIO2 IN SILICON (VOL 34, PG 166, 1993), Materials chemistry and physics, 36(3-4), 1994, pp. 389-389
Authors:
HSIA SL
MCGUIRE GE
TAN TY
SMITH PL
LYNCH WT
Citation: Sl. Hsia et al., HIGH-RESISTIVITY CO AND TI SILICIDE FORMATION ON SILICON-ON-INSULATORSUBSTRATES, Thin solid films, 253(1-2), 1994, pp. 462-466
Authors:
TAN TY
Citation: Ty. Tan, MAINTAINING THE MILITARY DISTRICTS - CIVIL-MILITARY INTEGRATION AND DISTRICT SOLDIERS BOARDS IN THE PUNJAB, 1919-1939, Modern Asian studies, 28, 1994, pp. 833-874
Authors:
TAN TY
Citation: Ty. Tan, THERMAL-EQUILIBRIUM CONCENTRATIONS OF POINT-DEFECTS IN GALLIUM-ARSENIDE, Journal of physics and chemistry of solids, 55(10), 1994, pp. 917-929
Authors:
TAYLOR WJ
GOSELE UM
TAN TY
Citation: Wj. Taylor et al., COPRECIPITATION OF CARBON AND OXYGEN IN SILICON - THE DOMINANT FLUX CRITERION, JPN J A P 1, 32(11A), 1993, pp. 4857-4862
Authors:
TAYLOR WJ
GOSELE UM
TAN TY
Citation: Wj. Taylor et al., PRECIPITATE STRAIN RELIEF VIA POINT-DEFECT INTERACTION - MODELS FOR SIO2 IN SILICON, Materials chemistry and physics, 34(2), 1993, pp. 166-174