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Results: 1-20 |
Results: 20
LIMITATIONS ON THRESHOLD ADJUSTMENT BY BACKGATING IN FULLY DEPLETED SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
Authors: TARR NG WANG Y SOREEFAN R SNELGROVE WM MANNING BM BAZARJANI S MACELWEE TW
Citation: Ng. Tarr et al., LIMITATIONS ON THRESHOLD ADJUSTMENT BY BACKGATING IN FULLY DEPLETED SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 838-842
HETEROSTRUCTURE SI1-XGEX CHANNEL PMOSFETS WITH GE CONCENTRATION
Authors: PAWLOWICZ C TARR NG BERNDT LP WILLIAMS RL LANDHEER D XU DX ABID R MCALISTER SP
Citation: C. Pawlowicz et al., HETEROSTRUCTURE SI1-XGEX CHANNEL PMOSFETS WITH GE CONCENTRATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 864-867
BASE TRANSIT-TIME MINIMIZATION WITH FIXED BASE DOPANT DOSE
Authors: WINTERTON SS TARR NG
Citation: Ss. Winterton et Ng. Tarr, BASE TRANSIT-TIME MINIMIZATION WITH FIXED BASE DOPANT DOSE, Solid-state electronics, 42(4), 1998, pp. 667-670
A FLOATING-GATE MOSFET DOSIMETER REQUIRING NO EXTERNAL BIAS SUPPLY
Authors: TARR NG MACKAY GF SHORTT K THOMSON I
Citation: Ng. Tarr et al., A FLOATING-GATE MOSFET DOSIMETER REQUIRING NO EXTERNAL BIAS SUPPLY, IEEE transactions on nuclear science, 45(3), 1998, pp. 1470-1474
HOLE CONFINEMENT AND MOBILITY IN HETEROSTRUCTURE SI GE/SI P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/
Authors: CYCA BR ROBINS KG TARR NG XU DX NOEL JP LANDHEER D SIMARDNORMANDIN M
Citation: Br. Cyca et al., HOLE CONFINEMENT AND MOBILITY IN HETEROSTRUCTURE SI GE/SI P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/, Journal of applied physics, 81(12), 1997, pp. 8079-8083
A CMOS INTEGRATED PULSE MODE ALPHA-PARTICLE COUNTER FOR APPLICATION IN RADON MONITORING
Authors: AHMED A WALKEY DJ TARR NG
Citation: A. Ahmed et al., A CMOS INTEGRATED PULSE MODE ALPHA-PARTICLE COUNTER FOR APPLICATION IN RADON MONITORING, IEEE transactions on nuclear science, 44(3), 1997, pp. 1425-1430
BOUNDS ON BIPOLAR-TRANSISTOR BASE TRANSIT-TIME
Authors: WINTERTON SS TARR NG
Citation: Ss. Winterton et Ng. Tarr, BOUNDS ON BIPOLAR-TRANSISTOR BASE TRANSIT-TIME, International journal of electronics, 81(6), 1996, pp. 643-645
LIMITATIONS ON MOSFET DOSIMETER RESOLUTION IMPOSED BY 1 F NOISE/
Authors: TARR NG PLETT C YEATON A MACKAY GF THOMSON I
Citation: Ng. Tarr et al., LIMITATIONS ON MOSFET DOSIMETER RESOLUTION IMPOSED BY 1 F NOISE/, IEEE transactions on nuclear science, 43(5), 1996, pp. 2492-2495
DISTRIBUTION OF BASE DOPANT FOR TRANSIT-TIME MINIMIZATION IN A BIPOLAR-TRANSISTOR
Authors: WINTERTON SS SEARLES S PETERS CJ TARR NG PULFREY DL
Citation: Ss. Winterton et al., DISTRIBUTION OF BASE DOPANT FOR TRANSIT-TIME MINIMIZATION IN A BIPOLAR-TRANSISTOR, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 170-172
SIMPLE BACKGATED MOSFET STRUCTURE FOR DYNAMIC THRESHOLD CONTROL IN FULLY DEPLETED SOI CMOS
Authors: TARR NG SOREEFAN R MACELWEE TW SNELGROVE WM BAZARJANI S
Citation: Ng. Tarr et al., SIMPLE BACKGATED MOSFET STRUCTURE FOR DYNAMIC THRESHOLD CONTROL IN FULLY DEPLETED SOI CMOS, Electronics Letters, 32(12), 1996, pp. 1093-1095
OPTICAL WAVE-GUIDE INTENSITY MODULATOR IN SILICON, BASED ON CARRIER INJECTION IN A SI1-XGEX PIN HETEROSTRUCTURE
Authors: FERNANDO C JANZ S NORMANDIN R NOEL JP TARR NG WIGHT JS
Citation: C. Fernando et al., OPTICAL WAVE-GUIDE INTENSITY MODULATOR IN SILICON, BASED ON CARRIER INJECTION IN A SI1-XGEX PIN HETEROSTRUCTURE, Canadian journal of physics, 74, 1996, pp. 29-31
A FLOATING-GATE MOSFET GAMMA-DOSIMETER
Authors: PETERS CJ TARR NG SHORTT K THOMSON I MACKAY GF
Citation: Cj. Peters et al., A FLOATING-GATE MOSFET GAMMA-DOSIMETER, Canadian journal of physics, 74, 1996, pp. 135-138
SHORT-CHANNEL EFFECTS ON MOSFET SUBTHRESHOLD SWING
Authors: TARR NG WALKEY DJ ROWLANDSON MB HEWITT SB MACELWEE TW
Citation: Ng. Tarr et al., SHORT-CHANNEL EFFECTS ON MOSFET SUBTHRESHOLD SWING, Solid-state electronics, 38(3), 1995, pp. 697-701
EFFECT OF RESIDUAL ION DAMAGE ON THE MINORITY-CARRIER LIFETIME IN MOLECULAR-BEAM EPITAXY-GROWN SILICON DOPED BY LOW-ENERGY ION-IMPLANTATION
Authors: PETERS CJ NOEL JP XU DX BUCHANAN M DU J TARR NG
Citation: Cj. Peters et al., EFFECT OF RESIDUAL ION DAMAGE ON THE MINORITY-CARRIER LIFETIME IN MOLECULAR-BEAM EPITAXY-GROWN SILICON DOPED BY LOW-ENERGY ION-IMPLANTATION, Applied physics letters, 67(7), 1995, pp. 977-979
A SIMPLE, APPROXIMATE REPRESENTATION OF THE ELECTRICAL BEHAVIOR OF METAL-SILICON CONTACTS
Authors: WINTERTON SS SMY TJ TARR NG
Citation: Ss. Winterton et al., A SIMPLE, APPROXIMATE REPRESENTATION OF THE ELECTRICAL BEHAVIOR OF METAL-SILICON CONTACTS, Journal of materials science letters, 13(2), 1994, pp. 101-102
CONTROL OF ANOMALOUS BORON-DIFFUSION IN THE BASE OF SI SIGE/SI HETEROJUNCTION BIPOLAR-TRANSISTORS USING PTSI/
Authors: XU DX PETERS CJ NOEL JP ROLFE SJ TARR NG
Citation: Dx. Xu et al., CONTROL OF ANOMALOUS BORON-DIFFUSION IN THE BASE OF SI SIGE/SI HETEROJUNCTION BIPOLAR-TRANSISTORS USING PTSI/, Applied physics letters, 64(24), 1994, pp. 3270-3272
BLANKET P-HALF-MICRON CMOS( POLYSILICON GATES FOR SUB)
Authors: WYLIE IW TARR NG
Citation: Iw. Wylie et Ng. Tarr, BLANKET P-HALF-MICRON CMOS( POLYSILICON GATES FOR SUB), Semiconductor science and technology, 8(8), 1993, pp. 1611-1615
SILICON-CARBIDE EMITTER DIODES BY LPCVD (LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION) USING DI-TERT-BUTYLSILANE
Authors: HEWITT SB TAY SP TARR NG BOOTHROYD AR
Citation: Sb. Hewitt et al., SILICON-CARBIDE EMITTER DIODES BY LPCVD (LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION) USING DI-TERT-BUTYLSILANE, Canadian journal of physics, 70(10-11), 1992, pp. 946-948
RAPID THERMAL ANNEALING OF INSITU PHOSPHORUS-DOPED POLYSILICON EMITTERS
Authors: MACKAY GF MANNING BM TARR NG
Citation: Gf. Mackay et al., RAPID THERMAL ANNEALING OF INSITU PHOSPHORUS-DOPED POLYSILICON EMITTERS, Canadian journal of physics, 70(10-11), 1992, pp. 1109-1111
AN IMPROVED VERSION OF THE COX AND STRACK TECHNIQUE FOR CONTACT RESISTIVITY MEASUREMENT
Authors: WINTERTON SS TARR NG
Citation: Ss. Winterton et Ng. Tarr, AN IMPROVED VERSION OF THE COX AND STRACK TECHNIQUE FOR CONTACT RESISTIVITY MEASUREMENT, Semiconductor science and technology, 6(11), 1991, pp. 1061-1065
Risultati: 1-20 |