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Results: 1-25 | 26-50 | 51-59

Results: 26-50/59

PRECURSORS OF A MOTT INSULATOR IN MODULATED QUANTUM WIRES

Authors: ODINTSOV AA TOKURA Y TARUCHA S

Citation: Aa. Odintsov et al., PRECURSORS OF A MOTT INSULATOR IN MODULATED QUANTUM WIRES, Physical review. B, Condensed matter, 56(20), 1997, pp. 12729-12732

ROUGHNESS SCATTERING IN A FINITE-LENGTH WIRE

Authors: TOKURA Y TARUCHA S

Citation: Y. Tokura et S. Tarucha, ROUGHNESS SCATTERING IN A FINITE-LENGTH WIRE, Physical review. B, Condensed matter, 55(23), 1997, pp. 15740-15747

EXCITATION-SPECTRA OF CIRCULAR, FEW-ELECTRON QUANTUM DOTS

Authors: KOUWENHOVEN LP OOSTERKAMP TH DANOESASTRO MWS ETO M AUSTING DG HONDA T TARUCHA S

Citation: Lp. Kouwenhoven et al., EXCITATION-SPECTRA OF CIRCULAR, FEW-ELECTRON QUANTUM DOTS, Science, 278(5344), 1997, pp. 1788-1792

EFFECTS OF COUPLING AND NONRESONANT TUNNELING ON COULOMB-BLOCKADE OSCILLATIONS IN AN ASYMMETRIC DOUBLE DOT STRUCTURE

Authors: WANG TH TARUCHA S

Citation: Th. Wang et S. Tarucha, EFFECTS OF COUPLING AND NONRESONANT TUNNELING ON COULOMB-BLOCKADE OSCILLATIONS IN AN ASYMMETRIC DOUBLE DOT STRUCTURE, Applied physics letters, 71(17), 1997, pp. 2499-2501

TUNNELING AND TRANSFER BETWEEN 1D AND 2D ELECTRONS IN ADJUSTED QUANTUM-WELLS WITH THIN BARRIER

Authors: FRIEDLAND KJ HIRAYAMA Y FUJISAWA T SAKU T TARUCHA S

Citation: Kj. Friedland et al., TUNNELING AND TRANSFER BETWEEN 1D AND 2D ELECTRONS IN ADJUSTED QUANTUM-WELLS WITH THIN BARRIER, Physica. B, Condensed matter, 227(1-4), 1996, pp. 31-33

A NEW DESIGN FOR SUBMICRON DOUBLE-BARRIER RESONANT-TUNNELING TRANSISTORS

Authors: AUSTING DG HONDA T TARUCHA S

Citation: Dg. Austing et al., A NEW DESIGN FOR SUBMICRON DOUBLE-BARRIER RESONANT-TUNNELING TRANSISTORS, Semiconductor science and technology, 11(3), 1996, pp. 388-391

NONINVASIVE DETERMINATION OF THE BALLISTIC-ELECTRON CURRENT DISTRIBUTION

Authors: TOKURA Y HONDA T TSUBAKI K TARUCHA S

Citation: Y. Tokura et al., NONINVASIVE DETERMINATION OF THE BALLISTIC-ELECTRON CURRENT DISTRIBUTION, Physical review. B, Condensed matter, 54(3), 1996, pp. 1947-1952

QUASI-ONE-DIMENSIONAL TRANSPORT NEAR THE BALLISTIC LIMIT

Authors: TOKURA Y TARUCHA S

Citation: Y. Tokura et S. Tarucha, QUASI-ONE-DIMENSIONAL TRANSPORT NEAR THE BALLISTIC LIMIT, Physical review. B, Condensed matter, 53(24), 1996, pp. 16403-16407

TRANSMISSION OF INTERACTING ELECTRONS THROUGH A ONE-DIMENSIONAL PERIODIC POTENTIAL

Authors: TAKAGAKI Y TOKURA Y TARUCHA S

Citation: Y. Takagaki et al., TRANSMISSION OF INTERACTING ELECTRONS THROUGH A ONE-DIMENSIONAL PERIODIC POTENTIAL, Physical review. B, Condensed matter, 53(23), 1996, pp. 15462-15465

BALLISTIC TRANSMISSION OF COMPOSITE FERMIONS IN A SIDE-GATED CROSSED-WIRE JUNCTION

Authors: TAKAGAKI Y HIRAYAMA Y SAKU T TARUCHA S

Citation: Y. Takagaki et al., BALLISTIC TRANSMISSION OF COMPOSITE FERMIONS IN A SIDE-GATED CROSSED-WIRE JUNCTION, Physical review. B, Condensed matter, 53(15), 1996, pp. 10060-10064

SINGLE-ELECTRON CHARGING AND SINGLE-ELECTRON TUNNELING IN SUBMICRON ALGAAS GAAS DOUBLE-BARRIER TRANSISTOR STRUCTURES/

Authors: AUSTING DG HONDA T TARUCHA S

Citation: Dg. Austing et al., SINGLE-ELECTRON CHARGING AND SINGLE-ELECTRON TUNNELING IN SUBMICRON ALGAAS GAAS DOUBLE-BARRIER TRANSISTOR STRUCTURES/, Solid-state electronics, 40(1-8), 1996, pp. 237-240

SHELL FILLING AND SPIN EFFECTS IN A FEW ELECTRON QUANTUM-DOT

Authors: TARUCHA S AUSTING DG HONDA T VANDERHAGE RJ KOUWENHOVEN LP

Citation: S. Tarucha et al., SHELL FILLING AND SPIN EFFECTS IN A FEW ELECTRON QUANTUM-DOT, Physical review letters, 77(17), 1996, pp. 3613-3616

EFFECTS OF FINITE DRAIN VOLTAGE AND FINITE-TEMPERATURE ON COHERENT RESONANT TRANSPORT IN SINGLE-ELECTRON TUNNELING REGIME

Authors: WANG TH TARUCHA S

Citation: Th. Wang et S. Tarucha, EFFECTS OF FINITE DRAIN VOLTAGE AND FINITE-TEMPERATURE ON COHERENT RESONANT TRANSPORT IN SINGLE-ELECTRON TUNNELING REGIME, Applied physics letters, 69(3), 1996, pp. 406-408

RESONANT-TUNNELING PROPERTIES OF SINGLE-ELECTRON TRANSISTORS WITH A NOVEL DOUBLE-GATE GEOMETRY

Authors: FUJISAWA T TARUCHA S

Citation: T. Fujisawa et S. Tarucha, RESONANT-TUNNELING PROPERTIES OF SINGLE-ELECTRON TRANSISTORS WITH A NOVEL DOUBLE-GATE GEOMETRY, Applied physics letters, 68(4), 1996, pp. 526-528

SOLID-STATE DEVICES AND MATERIALS - FOREWORD

Authors: TARUCHA S

Citation: S. Tarucha, SOLID-STATE DEVICES AND MATERIALS - FOREWORD, JPN J A P 1, 34(2B), 1995, pp. 1-1

SUBMICRON VERTICAL ALGAAS GAAS RESONANT-TUNNELING SINGLE-ELECTRON TRANSISTOR/

Authors: AUSTING DG HONDA T TOKURA Y TARUCHA S

Citation: Dg. Austing et al., SUBMICRON VERTICAL ALGAAS GAAS RESONANT-TUNNELING SINGLE-ELECTRON TRANSISTOR/, JPN J A P 1, 34(2B), 1995, pp. 1320-1325

HOT-ELECTRON BALLISTIC TRANSPORT IN SMALL 4-TERMINAL N-ALGAAS INGAAS/GAAS STRUCTURES/

Authors: SASAKI S HIRAYAMA Y TARUCHA S

Citation: S. Sasaki et al., HOT-ELECTRON BALLISTIC TRANSPORT IN SMALL 4-TERMINAL N-ALGAAS INGAAS/GAAS STRUCTURES/, JPN J A P 1, 34(2B), 1995, pp. 1351-1354

QUANTIZED CONDUCTANCE OBSERVED IN QUANTUM WIRES 2-MU-M TO 10-MU-M LONG

Authors: HONDA T TARUCHA S SAKU T TOKURA Y

Citation: T. Honda et al., QUANTIZED CONDUCTANCE OBSERVED IN QUANTUM WIRES 2-MU-M TO 10-MU-M LONG, JPN J A P 2, 34(1A), 1995, pp. 72-75

RESONANT-TUNNELING SINGLE-ELECTRON TRANSISTORS

Authors: TARUCHA S AUSTING DG HONDA T

Citation: S. Tarucha et al., RESONANT-TUNNELING SINGLE-ELECTRON TRANSISTORS, Superlattices and microstructures, 18(2), 1995, pp. 121-129

TRANSITION FROM WEAK TO STRONG SPIN-ORBIT SCATTERING REGIME IN DIFFUSIVE INGAAS INALAS QUANTUM WIRES/

Authors: FUKAI YK NAKANO H NAKATA S TARUCHA S ARAI K

Citation: Yk. Fukai et al., TRANSITION FROM WEAK TO STRONG SPIN-ORBIT SCATTERING REGIME IN DIFFUSIVE INGAAS INALAS QUANTUM WIRES/, Solid state communications, 94(9), 1995, pp. 757-761

REDUCTION OF QUANTIZED CONDUCTANCE AT LOW-TEMPERATURES OBSERVED IN 2 TO 10 MU-M-LONG QUANTUM WIRES

Authors: TARUCHA S HONDA T SAKU T

Citation: S. Tarucha et al., REDUCTION OF QUANTIZED CONDUCTANCE AT LOW-TEMPERATURES OBSERVED IN 2 TO 10 MU-M-LONG QUANTUM WIRES, Solid state communications, 94(6), 1995, pp. 413-418

HIGH-MOBILITY INVERTED MODULATION-DOPED GAAS ALGAAS HETEROSTRUCTURES/

Authors: SAKU T HORIKOSHI Y TARUCHA S

Citation: T. Saku et al., HIGH-MOBILITY INVERTED MODULATION-DOPED GAAS ALGAAS HETEROSTRUCTURES/, JPN J A P 1, 33(9A), 1994, pp. 4837-4842

TRANSPORT-PROPERTIES OF MODULATION-DOPED STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY AFTER FOCUSED ION-BEAM IMPLANTATION

Authors: ITOH M SAKU T FUJISAWA T HIRAYAMA Y TARUCHA S

Citation: M. Itoh et al., TRANSPORT-PROPERTIES OF MODULATION-DOPED STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY AFTER FOCUSED ION-BEAM IMPLANTATION, JPN J A P 1, 33(1B), 1994, pp. 771-774

SOLID-STATE DEVICES AND MATERIALS - FOREWORD

Authors: TARUCHA S

Citation: S. Tarucha, SOLID-STATE DEVICES AND MATERIALS - FOREWORD, JPN J A P 1, 33(1B), 1994, pp. 180000007-180000007

QUANTIZED CONDUCTANCE IN INGAAS POINT CONTACTS AT HIGH-TEMPERATURES

Authors: BEVER T HIRAYAMA Y TARUCHA S

Citation: T. Bever et al., QUANTIZED CONDUCTANCE IN INGAAS POINT CONTACTS AT HIGH-TEMPERATURES, JPN J A P 2, 33(6A), 1994, pp. 120000800-120000803

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