AAAAAA

   
Results: 1-9 |
Results: 9
DEGRADATION OF INSULATORS IN SILICON SELECTIVE EPITAXIAL-GROWTH (SEG)AMBIENT
Authors: BASHIR R KIM S QADRI N JIN D NEUDECK GW DENTON JP YERIC G WU K TASCH A
Citation: R. Bashir et al., DEGRADATION OF INSULATORS IN SILICON SELECTIVE EPITAXIAL-GROWTH (SEG)AMBIENT, IEEE electron device letters, 16(9), 1995, pp. 382-384
SURFACE-CHEMISTRY OF DIETHYLSILANE AND DIETHYLGERMANE ON GE(100)
Authors: MAHAJAN A KELLERMAN BK HEITZINGER JM BANERJEE S TASCH A WHITE JM EKERDT JG
Citation: A. Mahajan et al., SURFACE-CHEMISTRY OF DIETHYLSILANE AND DIETHYLGERMANE ON GE(100), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1461-1468
IN-SITU P-DOPED SI AND SI1-XGEX EPITAXIAL-FILMS GROWN BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: THOMAS S FRETWELL J KINOSKY D QIAN R MAHAJAN A MUNGUIA P BANERJEE S TASCH A MAGEE C
Citation: S. Thomas et al., IN-SITU P-DOPED SI AND SI1-XGEX EPITAXIAL-FILMS GROWN BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 24(3), 1995, pp. 183-188
SURFACE-CHEMISTRY OF DIETHYLSILANE AND DIETHYLGERMANE ON SI(100) - ANATOMIC LAYER EPITAXY APPROACH
Authors: MAHAJAN A KELLERMAN BK RUSSELL NM BANERJEE S CAMPION A EKERDT JG TASCH A WHITE JM BONSER DJ
Citation: A. Mahajan et al., SURFACE-CHEMISTRY OF DIETHYLSILANE AND DIETHYLGERMANE ON SI(100) - ANATOMIC LAYER EPITAXY APPROACH, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 2265-2270
ADAPTIVE TEMPERATURE PROGRAM ALE OF SI1-XGEX SI HETEROSTRUCTURES FROMSI2H6/GE2H6/
Authors: ASAMI S RUSSELL NM MAHAJAN A STEINER PA BONSER DJ FRETWELL J BANNERJEE S TASCH A WHITE JM EKERDT JG
Citation: S. Asami et al., ADAPTIVE TEMPERATURE PROGRAM ALE OF SI1-XGEX SI HETEROSTRUCTURES FROMSI2H6/GE2H6/, Applied surface science, 82-3, 1994, pp. 359-366
ROOM-TEMPERATURE ELECTROABSORPTION IN A GEXSI1-X PIN PHOTODIODE
Authors: MURTAZA S MAYER R RASHED M KINOSKY D MAZIAR C BANERJEE S TASCH A CAMPBELL JC BEAN JC PETICOLAS LJ
Citation: S. Murtaza et al., ROOM-TEMPERATURE ELECTROABSORPTION IN A GEXSI1-X PIN PHOTODIODE, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2297-2300
2-DIMENSIONAL ENERGY-DEPENDENT MODELS FOR THE SIMULATION OF SUBSTRATECURRENT IN SUBMICRON MOSFETS
Authors: AGOSTINELLI VM BORDELON TJ WANG XL HASNAT K YEAP CF LEMERSAL DB TASCH A MAZIAR CM
Citation: Vm. Agostinelli et al., 2-DIMENSIONAL ENERGY-DEPENDENT MODELS FOR THE SIMULATION OF SUBSTRATECURRENT IN SUBMICRON MOSFETS, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1784-1795
CONTROL OF DEPOSITION RATE IN REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF GEXSI1-X SI HETEROEPITAXIAL FILMS/
Authors: KINOSKY D QIAN R MAHAJAN A THOMAS S BANERJEE S TASCH A MAGEE C
Citation: D. Kinosky et al., CONTROL OF DEPOSITION RATE IN REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF GEXSI1-X SI HETEROEPITAXIAL FILMS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1396-1400
PHOTODETECTORS FABRICATED FROM RAPID-THERMAL-OXIDIZED POROUS SI
Authors: TSAI CC LI KH CAMPBELL JC TASCH A
Citation: Cc. Tsai et al., PHOTODETECTORS FABRICATED FROM RAPID-THERMAL-OXIDIZED POROUS SI, Applied physics letters, 62(22), 1993, pp. 2818-2820
Risultati: 1-9 |