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Results: 1-25 | 26-35 |
Results: 26-35/35
AN EXAMINATION OF THE EFFECT OF DOSE-RATE ON ION-IMPLANTED IMPURITY PROFILES IN SILICON
Authors: TIAN S YANG SH MORRIS S PARAB K TASCH AF KAMENITSA D REECE R FREER B SIMONTON RB MAGEE C
Citation: S. Tian et al., AN EXAMINATION OF THE EFFECT OF DOSE-RATE ON ION-IMPLANTED IMPURITY PROFILES IN SILICON, Journal of the Electrochemical Society, 142(9), 1995, pp. 3215-3219
EXPERIMENTAL-OBSERVATIONS AND MODELING OF ULTRA-SHALLOW BF2 AND AS IMPLANTS IN SINGLE-CRYSTAL SILICON
Authors: TASCH AF YANG SH MORRIS S LIM D
Citation: Af. Tasch et al., EXPERIMENTAL-OBSERVATIONS AND MODELING OF ULTRA-SHALLOW BF2 AND AS IMPLANTS IN SINGLE-CRYSTAL SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 166-171
A MANUFACTURING SENSITIVITY ANALYSIS OF 0.35 MU-M LDD MOSFETS
Authors: HASNAT K MURTAZA S TASCH AF
Citation: K. Hasnat et al., A MANUFACTURING SENSITIVITY ANALYSIS OF 0.35 MU-M LDD MOSFETS, IEEE transactions on semiconductor manufacturing, 7(1), 1994, pp. 53-59
AN ACCURATE AND COMPUTATIONALLY EFFICIENT SEMIEMPIRICAL MODEL FOR ARSENIC IMPLANTS INTO SINGLE-CRYSTAL (100) SILICON
Authors: YANG SH MORRIS SJ LIM DL TASCH AF SIMONTON RB KAMENITSA D MAGEE C LUX G
Citation: Sh. Yang et al., AN ACCURATE AND COMPUTATIONALLY EFFICIENT SEMIEMPIRICAL MODEL FOR ARSENIC IMPLANTS INTO SINGLE-CRYSTAL (100) SILICON, Journal of electronic materials, 23(8), 1994, pp. 801-808
SENSITIVITY ISSUES IN MODELING THE SUBSTRATE CURRENT FOR SUBMICRON N-CHANNEL AND P-CHANNEL MOSFETS
Authors: AGOSTINELLI VM HASNAT K BORDELON TJ LEMERSAL DB TASCH AF MAZIAR CM
Citation: Vm. Agostinelli et al., SENSITIVITY ISSUES IN MODELING THE SUBSTRATE CURRENT FOR SUBMICRON N-CHANNEL AND P-CHANNEL MOSFETS, Solid-state electronics, 37(9), 1994, pp. 1627-1632
UNIVERSAL MOSFET HOLE MOBILITY DEGRADATION MODELS FOR CIRCUIT SIMULATION
Authors: AGOSTINELLI VM YERIC GM TASCH AF
Citation: Vm. Agostinelli et al., UNIVERSAL MOSFET HOLE MOBILITY DEGRADATION MODELS FOR CIRCUIT SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 12(3), 1993, pp. 439-445
IMPROVED UNIVERSAL MOSFET ELECTRON-MOBILITY DEGRADATION MODELS FOR CIRCUIT SIMULATION
Authors: YUE C AGOSTINELLI VM YERIC GM TASCH AF
Citation: C. Yue et al., IMPROVED UNIVERSAL MOSFET ELECTRON-MOBILITY DEGRADATION MODELS FOR CIRCUIT SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 12(10), 1993, pp. 1542-1546
A 2-DIMENSIONAL B-IMPLANTATION MODEL FOR SEMICONDUCTOR PROCESS SIMULATION ENVIRONMENTS
Authors: KLEIN KM PARK C MORRIS S YANG SH TASCH AF
Citation: Km. Klein et al., A 2-DIMENSIONAL B-IMPLANTATION MODEL FOR SEMICONDUCTOR PROCESS SIMULATION ENVIRONMENTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 79(1-4), 1993, pp. 651-654
NEW STRUCTURAL APPROACH FOR REDUCING PUNCHTHROUGH CURRENT IN DEEP-SUBMICROMETER MOSFETS AND EXTENDING MOSFET SCALING
Authors: HARELAND SA TASCH AF MAZIAR CM
Citation: Sa. Hareland et al., NEW STRUCTURAL APPROACH FOR REDUCING PUNCHTHROUGH CURRENT IN DEEP-SUBMICROMETER MOSFETS AND EXTENDING MOSFET SCALING, Electronics Letters, 29(21), 1993, pp. 1894-1896
ROOM-TEMPERATURE MEASUREMENTS OF STRONG ELECTROABSORPTION EFFECT IN GEXSI1-X SI MULTIPLE QUANTUM-WELLS GROWN BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION/
Authors: MURTAZA SS QIAN R KINOSKY D MAYER R TASCH AF BANERJEE S CAMPBELL JC
Citation: Ss. Murtaza et al., ROOM-TEMPERATURE MEASUREMENTS OF STRONG ELECTROABSORPTION EFFECT IN GEXSI1-X SI MULTIPLE QUANTUM-WELLS GROWN BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION/, Applied physics letters, 62(16), 1993, pp. 1976-1978
Risultati: 1-25 | 26-35 |