Authors: MOURET I CALVET MC CALVEL P TASTET P ALLENSPACH M LABEL KA TITUS JL WHEATLEY CF SCHRIMPF RD GALLOWAY KF

Citation: I. Mouret et al., EXPERIMENTAL-EVIDENCE OF THE TEMPERATURE AND ANGULAR-DEPENDENCE IN SEGR, IEEE transactions on nuclear science, 43(3), 1996, pp. 936-943

Authors: DACHS C ROUBAUD F PALAU JM BRUGUIER G GASIOT J TASTET P CALVET MC CALVEL P

Citation: C. Dachs et al., SIMULATION AIDED HARDENING OF N-CHANNEL POWER MOSFETS TO PREVENT SINGLE EVENT BURNOUT, IEEE transactions on nuclear science, 42(6), 1995, pp. 1935-1939

Authors: DACHS C ROUBAUD F PALAU JM BRUGUIER G GASIOT J TASTET P

Citation: C. Dachs et al., EVIDENCE OF THE IONS IMPACT POSITION EFFECT ON SEB IN N-CHANNEL POWERMOSFETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2167-2171

Authors: TASTET P GARNIER J CONSTANS H TIZON AH

Citation: P. Tastet et al., BURNOUT SENSITIVITY OF POWER MOSFETS OPERATING IN A SWITCHING CONVERTER, IEEE transactions on nuclear science, 41(3), 1994, pp. 583-588

Authors: ROUBAUD F DACHS C PALAU JM GASIOT J TASTET P

Citation: F. Roubaud et al., EXPERIMENTAL AND 2D SIMULATION STUDY OF THE SINGLE-EVENT BURNOUT IN N-CHANNEL POWER MOSFETS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1952-1958