AAAAAA
Results:
1-12
|
Results: 12
Authors:
ADACHI Y
KOBAYASHI Y
IDA H
YASUMIZU R
OKAMURA A
KAYATANI H
TERANISHI N
INABA M
SUGIHARA A
GENBA H
ETO Y
IKEHARA S
Citation: Y. Adachi et al., AN AUTOPSY CASE OF FETAL GAUCHER-DISEASE, Acta Paediatrica Japonica Overseas Edition, 40(4), 1998, pp. 374-377
Authors:
YAMADA T
KAWAKAMI Y
NAKANO T
MUTOH N
ORIHARA K
TERANISHI N
Citation: T. Yamada et al., DRIVING VOLTAGE REDUCTION IN A 2-PHASE CCD BY SUPPRESSION OF POTENTIAL POCKETS IN INTER-ELECTRODE GAPS, I.E.E.E. transactions on electron devices, 44(10), 1997, pp. 1580-1587
Authors:
KAWAI S
MUTOH N
TERANISHI N
Citation: S. Kawai et al., THERMIONIC-EMISSION-BASED BARRIER HEIGHT ANALYSIS FOR PRECISE ESTIMATION OF CHARGE HANDLING CAPACITY IN CCD REGISTERS, I.E.E.E. transactions on electron devices, 44(10), 1997, pp. 1588-1592
Authors:
SATOH T
MUTOH N
FURUMIYA M
MURAKAMI I
SUWAZONO S
OGAWA C
HATANO K
UTSUMI H
KAWAI S
ARAI K
MORIMOTO M
ORIHARA K
TAMURA T
TERANISHI N
HOKARI Y
Citation: T. Satoh et al., OPTICAL LIMITATIONS TO CELL-SIZE REDUCTION IN IT-CCD IMAGE SENSORS, I.E.E.E. transactions on electron devices, 44(10), 1997, pp. 1599-1603
Authors:
KONUMA K
ASANO Y
MASUBUCHI K
UTSUMI H
TOHYAMA S
ENDO T
AZUMA H
TERANISHI N
Citation: K. Konuma et al., AN INFRARED-BI-COLOR SCHOTTKY-BARRIER CCD IMAGE SENSOR FOR PRECISE THERMAL IMAGES, I.E.E.E. transactions on electron devices, 43(2), 1996, pp. 282-286
Authors:
TANAKA A
MATSUMOTO S
TSUKAMOTO N
ITOH S
CHIBA K
ENDOH T
NAKAZATO A
OKUYAMA K
KUMAZAWA Y
HIJIKAWA M
GOTOH H
TANAKA T
TERANISHI N
Citation: A. Tanaka et al., INFRARED FOCAL-PLANE ARRAY INCORPORATING SILICON IC PROCESS COMPATIBLE BOLOMETER, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1844-1850
Authors:
TOHYAMA S
MASUBUCHI K
KONUMA K
AZUMA H
TANABE A
UTSUMI H
TERANISHI N
TAKANO E
YAMAGATA S
HIJIKAWA M
SAHARA H
MURAMATSU T
SEKI T
ONO T
GOTO H
Citation: S. Tohyama et al., A HIGH FILL FACTOR AND PROGRESSIVE SCAN PTSI SCHOTTKY-BARRIER IR-CCD IMAGE SENSOR USING NEW WIRING TECHNOLOGY, I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1433-1440
Authors:
TOHYAMA S
TANABE A
TERANISHI N
Citation: S. Tohyama et al., A SILICON HOMOJUNCTION INFRARED DETECTOR HAVING AN ACTIVE METAL-FILM ON AN N++ LAYER (VOL 41, PG 1535, 1994), I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1390-1390
Authors:
KAWAI S
MORIMOTO M
MUTOH N
TERANISHI N
Citation: S. Kawai et al., PHOTO RESPONSE ANALYSIS IN CCD IMAGE SENSORS WITH A VOD STRUCTURE, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 652-655
Authors:
MUTOH N
ORIHARA K
KAWAKAMI Y
NAKANO T
KAWAI S
MURAKAMI I
TANABE A
SUWAZONO S
ARAI K
TERANISHI N
FURUMIYA M
MORIMOTO M
HATANO K
MINAMI K
HOKARI Y
Citation: N. Mutoh et al., A 1 4-INCH 380 K PIXEL IT-CCD IMAGE SENSOR EMPLOYING GATE-ASSISTED PUNCHTHROUGH READ-OUT MODE/, I.E.E.E. transactions on electron devices, 42(10), 1995, pp. 1783-1788
Authors:
MORIMOTO M
ORIHARA K
MUTOH N
TOYODA A
OHBO M
KAWAKAMI Y
NAKANO T
CHIBA K
KAWAI S
HATANO K
ARAI K
NISHIMURA M
NAKASHIBA Y
KOHNO A
AKIYAMA I
TERANISHI N
HOKARI Y
Citation: M. Morimoto et al., A 1-INCH 2-M PIXEL HDTV CCD IMAGE SENSOR WITH TUNGSTEN PHOTO-SHIELD AND H-CCD SHUNT WIRING, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 50-57
Authors:
TOHYAMA S
TANABE A
TERANISHI N
Citation: S. Tohyama et al., A SILICON HOMOJUNCTION INFRARED DETECTOR HAVING AN ACTIVE METAL-FILM ON AN N++ LAYER, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1535-1540
Risultati:
1-12
|