Citation: Lr. Tessler et F. Alvarez, COMMENT ON MONTE-CARLO SIMULATIONS OF THE RECOMBINATION DYNAMICS IN POROUS SILICON, Journal of physics. Condensed matter, 10(6), 1998, pp. 1447-1448
Authors:
ALVAREZ F
ROVIRA PI
BORMIOLI M
SOUTO S
TESSLER LR
CAMARGO SS
Citation: F. Alvarez et al., CATHODIC AND ANODIC GLOW-DISCHARGE SILICON-CARBON ALLOYS (A-SI1-XCX-H) FROM X=0.5 TO 1 - A COMPARATIVE-STUDY BY PHOTOEMISSION (UPS) AND PHOTOLUMINESCENCE (PL), Journal of non-crystalline solids, 200, 1996, pp. 628-631
Citation: Sp. Lau et al., OPTOELECTRONIC PROPERTIES OF HIGHLY CONDUCTIVE MICROCRYSTALLINE SIC PRODUCED BY LASER CRYSTALLIZATION OF AMORPHOUS SIC, Journal of non-crystalline solids, 200, 1996, pp. 907-910
Citation: Lr. Tessler et I. Solomon, PHOTOLUMINESCENCE OF TETRAHEDRALLY COORDINATED A-SI1-XCX-H, Physical review. B, Condensed matter, 52(15), 1995, pp. 10962-10971
Authors:
SCHAF J
RODRIGUES P
PUREUR P
GHIVELDER L
LU FR
WOLF EL
COHEN LF
TESSLER LR
TAYLOR KNR
Citation: J. Schaf et al., ANISOTROPIC MAGNETIC IRREVERSIBILITY IN SINGLE-CRYSTALS AND ORIENTED GRAIN SYSTEMS OF BI2SR2CA1CU2OY AND YBA2CU3O7-DELTA SUPERCONDUCTORS, Physica. C, Superconductivity, 235, 1994, pp. 2803-2804
Citation: Lr. Tessler et al., TIME-RESOLVED PHOTOLUMINESCENCE OF POROUS SILICON - EVIDENCE FOR TUNNELING LIMITED RECOMBINATION IN A BAND OF LOCALIZED STATES, Applied physics letters, 62(19), 1993, pp. 2381-2383