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Results: 1-25 | 26-27
Results: 1-25/27
MIDINFRARED SILICON GERMANIUM BASED PHOTODETECTION/
Authors: PRESTING H HEPP M KIBBEL H THONKE K SAUER R MAHLEIN M CABANSKI W JAROS M
Citation: H. Presting et al., MIDINFRARED SILICON GERMANIUM BASED PHOTODETECTION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1520-1524
ION-BEAM-INDUCED STRUCTURAL TRANSFORMATIONS IN SIMGEN SUPERLATTICES
Authors: SOBOLEV NA GERSTER J MAUCKNER G WOLPERT M LIMMER W THONKE K SAUER R PRESTING H KONIG U
Citation: Na. Sobolev et al., ION-BEAM-INDUCED STRUCTURAL TRANSFORMATIONS IN SIMGEN SUPERLATTICES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1057-1061
ELECTROREFLECTANCE SPECTROSCOPY OF STRAINED SI1-XGEX LAYERS ON SILICON
Authors: EBNER T THONKE K SAUER R SCHAEFFLER F HERZOG HJ
Citation: T. Ebner et al., ELECTROREFLECTANCE SPECTROSCOPY OF STRAINED SI1-XGEX LAYERS ON SILICON, Physical review. B, Condensed matter, 57(24), 1998, pp. 15448-15453
SPECTROSCOPY OF BAND-TO-BAND OPTICAL-TRANSITIONS IN SI-GE ALLOYS AND SUPERLATTICES
Authors: PEARSALL TP COLACE L DIVERGILIO A JAGER W STENKAMP D THEODOROU G PRESTING H KASPER E THONKE K
Citation: Tp. Pearsall et al., SPECTROSCOPY OF BAND-TO-BAND OPTICAL-TRANSITIONS IN SI-GE ALLOYS AND SUPERLATTICES, Physical review. B, Condensed matter, 57(15), 1998, pp. 9128-9140
CATHODOLUMINESCENCE INVESTIGATION OF ISOTOPE EFFECTS IN DIAMOND
Authors: RUF T CARDONA M STERNSCHULTE H WAHL S THONKE K SAUER R PAVONE P ANTHONY TR
Citation: T. Ruf et al., CATHODOLUMINESCENCE INVESTIGATION OF ISOTOPE EFFECTS IN DIAMOND, Solid state communications, 105(5), 1998, pp. 311-316
PHOTOCURRENT AND PHOTOLUMINESCENCE MEASUREMENTS IN THE NEAR-BAND-EDGEREGION OF 6H GAN
Authors: KORNITZER K THONKE K SAUER R MAYER M KAMP M EBELING KJ
Citation: K. Kornitzer et al., PHOTOCURRENT AND PHOTOLUMINESCENCE MEASUREMENTS IN THE NEAR-BAND-EDGEREGION OF 6H GAN, Journal of applied physics, 83(8), 1998, pp. 4397-4402
IR ABSORPTION AND QUANTUM EFFICIENCY OF HIGHLY P-DOPED SIGE LAYERS
Authors: USCHMANN J PRESTING H KIBBEL H THONKE K SAUER R CABANSKI W JAROS M
Citation: J. Uschmann et al., IR ABSORPTION AND QUANTUM EFFICIENCY OF HIGHLY P-DOPED SIGE LAYERS, Thin solid films, 294(1-2), 1997, pp. 340-342
TIME-RESOLVED AND ENERGY-RESOLVED EMISSION-SPECTROSCOPY USING A STEP-SCAN FT SPECTROMETER COMBINED WITH CORRELATIONAL ANALYSIS TECHNIQUES
Authors: THONKE K BAIER T HAMANN J SCHEERER O SAUER R
Citation: K. Thonke et al., TIME-RESOLVED AND ENERGY-RESOLVED EMISSION-SPECTROSCOPY USING A STEP-SCAN FT SPECTROMETER COMBINED WITH CORRELATIONAL ANALYSIS TECHNIQUES, Applied spectroscopy, 51(4), 1997, pp. 548-551
OBSERVATION OF BORON BOUND EXCITONS IN BORON-IMPLANTED AND ANNEALED NATURAL IIA DIAMONDS
Authors: STERNSCHULTE H WAHL S THONKE K SAUER R DALMER M RONNING C HOFSASS H
Citation: H. Sternschulte et al., OBSERVATION OF BORON BOUND EXCITONS IN BORON-IMPLANTED AND ANNEALED NATURAL IIA DIAMONDS, Applied physics letters, 71(18), 1997, pp. 2668-2670
CHARACTERIZATION OF DOPED AND UNDOPED CVD-DIAMOND FILMS BY CATHODOLUMINESCENCE
Authors: STERNSCHULTE H HORSELING J ALBRECHT T THONKE K
Citation: H. Sternschulte et al., CHARACTERIZATION OF DOPED AND UNDOPED CVD-DIAMOND FILMS BY CATHODOLUMINESCENCE, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 585-588
ELECTROREFLECTANCE SPECTROSCOPY OF STRAINED SI1-XGEX LAYERS ON SILICON
Authors: EBNER T THONKE K SAUER R SCHAFFLER F HERZOG HJ
Citation: T. Ebner et al., ELECTROREFLECTANCE SPECTROSCOPY OF STRAINED SI1-XGEX LAYERS ON SILICON, Applied surface science, 102, 1996, pp. 90-93
SI1-XGEX SI(001) LAYERS UNDER EXTERNAL UNIAXIAL-STRESS - PHOTOLUMINESCENCE STUDIES/
Authors: MANTZ U STECK B THONKE K SAUER R SCHAFFLER F HERZOG HJ
Citation: U. Mantz et al., SI1-XGEX SI(001) LAYERS UNDER EXTERNAL UNIAXIAL-STRESS - PHOTOLUMINESCENCE STUDIES/, Applied surface science, 102, 1996, pp. 314-318
INFLUENCE OF ELECTRON-IRRADIATION AND ANNEALING ON THE PHOTOLUMINESCENCE OF SI GE SUPERLATTICES AND SI/GE QUANTUM-WELLS/
Authors: SOBOLEV NA KORSHUNOV FP SAUER R THONKE K KONIG U PRESTING H
Citation: Na. Sobolev et al., INFLUENCE OF ELECTRON-IRRADIATION AND ANNEALING ON THE PHOTOLUMINESCENCE OF SI GE SUPERLATTICES AND SI/GE QUANTUM-WELLS/, Journal of crystal growth, 167(3-4), 1996, pp. 502-507
ELECTROLUMINESCENCE, PHOTOLUMINESCENCE, AND PHOTOCURRENT STUDIES OF SI SIGE P-I-N HETEROSTRUCTURES/
Authors: FORSTER M MANTZ U RAMMINGER S THONKE K SAUER R KIBBEL H SCHAFFLER F HERZOG HJ
Citation: M. Forster et al., ELECTROLUMINESCENCE, PHOTOLUMINESCENCE, AND PHOTOCURRENT STUDIES OF SI SIGE P-I-N HETEROSTRUCTURES/, Journal of applied physics, 80(5), 1996, pp. 3017-3023
UNIAXIAL-STRESS AND ZEEMAN SPLITTING OF THE 1.681 EV OPTICAL-CENTER IN A HOMOEPITAXIAL CVD DIAMOND FILM
Authors: STERNSCHULTE H THONKE K GERSTER J LIMMER W SAUER R SPITZER J MUNZINGER PC
Citation: H. Sternschulte et al., UNIAXIAL-STRESS AND ZEEMAN SPLITTING OF THE 1.681 EV OPTICAL-CENTER IN A HOMOEPITAXIAL CVD DIAMOND FILM, DIAMOND AND RELATED MATERIALS, 4(10), 1995, pp. 1189-1192
FIELD-DEPENDENT VERTICAL-TRANSPORT STUDIES IN AL0.24GA0.76AS GAAS DOUBLE-QUANTUM-WELL STRUCTURES/
Authors: WEBER S FONTIUS U LIMMER W THONKE K SAUER R PANZLAFF K
Citation: S. Weber et al., FIELD-DEPENDENT VERTICAL-TRANSPORT STUDIES IN AL0.24GA0.76AS GAAS DOUBLE-QUANTUM-WELL STRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 245-249
THERMAL CARRIER EMISSION FROM A SEMICONDUCTOR QUANTUM-WELL
Authors: WEBER S LIMMER W THONKE K SAUER R PANZLAFF K BACHER G MEIER HP ROENTGEN P
Citation: S. Weber et al., THERMAL CARRIER EMISSION FROM A SEMICONDUCTOR QUANTUM-WELL, Physical review. B, Condensed matter, 52(20), 1995, pp. 14739-14747
TYPE-II BAND ALIGNMENT IN SI SI1-XGEX QUANTUM-WELLS FROM PHOTOLUMINESCENCE LINE SHIFTS DUE TO OPTICALLY INDUCED BAND-BENDING EFFECTS - EXPERIMENT AND THEORY/
Authors: BAIER T MANTZ U THONKE K SAUER R SCHAFFLER F HERZOG HJ
Citation: T. Baier et al., TYPE-II BAND ALIGNMENT IN SI SI1-XGEX QUANTUM-WELLS FROM PHOTOLUMINESCENCE LINE SHIFTS DUE TO OPTICALLY INDUCED BAND-BENDING EFFECTS - EXPERIMENT AND THEORY/, Physical review. B, Condensed matter, 50(20), 1994, pp. 15191-15196
1.681-EV LUMINESCENCE CENTER IN CHEMICAL-VAPOR-DEPOSITED HOMOEPITAXIAL DIAMOND FILMS
Authors: STERNSCHULTE H THONKE K SAUER R MUNZINGER PC MICHLER P
Citation: H. Sternschulte et al., 1.681-EV LUMINESCENCE CENTER IN CHEMICAL-VAPOR-DEPOSITED HOMOEPITAXIAL DIAMOND FILMS, Physical review. B, Condensed matter, 50(19), 1994, pp. 14554-14560
QUANTUM CONFINEMENT EFFECTS IN ABSORPTION AND EMISSION OF FREESTANDING POROUS SILICON
Authors: MAUCKNER G REBITZER W THONKE K SAUER R
Citation: G. Mauckner et al., QUANTUM CONFINEMENT EFFECTS IN ABSORPTION AND EMISSION OF FREESTANDING POROUS SILICON, Solid state communications, 91(9), 1994, pp. 717-720
MEASUREMENT OF TIME-RESOLVED PHOTOLUMINESCENCE OF SEMICONDUCTORS USING CORRELATIONAL ANALYSIS
Authors: BAIER T WALTER T MAUCKNER G SCHNEIDER J THONKE K SAUER R
Citation: T. Baier et al., MEASUREMENT OF TIME-RESOLVED PHOTOLUMINESCENCE OF SEMICONDUCTORS USING CORRELATIONAL ANALYSIS, Review of scientific instruments, 65(9), 1994, pp. 2890-2893
TEMPERATURE-DEPENDENT LIFETIME DISTRIBUTION OF THE PHOTOLUMINESCENCE S-BAND IN POROUS SILICON
Authors: MAUCKNER G THONKE K BAIER T WALTER T SAUER R
Citation: G. Mauckner et al., TEMPERATURE-DEPENDENT LIFETIME DISTRIBUTION OF THE PHOTOLUMINESCENCE S-BAND IN POROUS SILICON, Journal of applied physics, 75(8), 1994, pp. 4167-4170
CHARGE-TRANSFER TRANSITIONS AND PSEUDOACCEPTOR STATES OF IRON IN GALLIUM-PHOSPHIDE
Authors: PRESSEL K DORNEN A RUCKERT G THONKE K
Citation: K. Pressel et al., CHARGE-TRANSFER TRANSITIONS AND PSEUDOACCEPTOR STATES OF IRON IN GALLIUM-PHOSPHIDE, Physical review. B, Condensed matter, 47(24), 1993, pp. 16267-16273
OPTICAL STUDY OF SPIN-FLIP TRANSITIONS AT FE-3+ IN INP
Authors: PRESSEL K BOHNERT G DORNEN A KAUFMANN B DENZEL J THONKE K
Citation: K. Pressel et al., OPTICAL STUDY OF SPIN-FLIP TRANSITIONS AT FE-3+ IN INP, Physical review. B, Condensed matter, 47(15), 1993, pp. 9411-9417
LUMINESCENCE PROPERTIES AND SURFACE-TOPOGRAPHY OF POROUS SILICON
Authors: MAUCKNER G WALTER T BAIER T THONKE K SAUER R HOUBERTZ R MEMMERT U BEHM RJ
Citation: G. Mauckner et al., LUMINESCENCE PROPERTIES AND SURFACE-TOPOGRAPHY OF POROUS SILICON, Journal of luminescence, 57(1-6), 1993, pp. 211-215
Risultati: 1-25 | 26-27