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Results: 1-10 |
Results: 10
EXTREMELY THIN SILICON DELTA-E DETECTORS FOR ION-BEAM ANALYSIS
Authors: WHITLOW HJ WINZELL T THUNGSTROM G
Citation: Hj. Whitlow et al., EXTREMELY THIN SILICON DELTA-E DETECTORS FOR ION-BEAM ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 616-622
DEPOSITION OF SCINTILLATING LAYERS OF BISMUTH-GERMANATE (BGO) FILMS FOR X-RAY-DETECTOR APPLICATIONS
Authors: DUAN M FROJDH C THUNGSTROM G WANG LW LINNROS J PETERSSON CS
Citation: M. Duan et al., DEPOSITION OF SCINTILLATING LAYERS OF BISMUTH-GERMANATE (BGO) FILMS FOR X-RAY-DETECTOR APPLICATIONS, IEEE transactions on nuclear science, 45(3), 1998, pp. 525-527
FABRICATION OF AN INTEGRATED DELTA-E-E-SILICON DETECTOR BY WAFER BONDING USING COBALT DISILICIDE
Authors: THUNGSTROM G VANVELDHUIZEN EJ WESTERBERG L NORLIN LO PETERSSON CS
Citation: G. Thungstrom et al., FABRICATION OF AN INTEGRATED DELTA-E-E-SILICON DETECTOR BY WAFER BONDING USING COBALT DISILICIDE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 391(2), 1997, pp. 315-328
WHAT IS THE ROLE OF THE METAL ON THE FERMI-LEVEL POSITION AT THE INTERFACE WITH IV-IV COMPOUNDS
Authors: AUBRYFORTUNA V PERROSSIER JL MAMOR M MEYER F FROJDH C THUNGSTROM G PETERSSON CS BODNAR S REGOLINI JL
Citation: V. Aubryfortuna et al., WHAT IS THE ROLE OF THE METAL ON THE FERMI-LEVEL POSITION AT THE INTERFACE WITH IV-IV COMPOUNDS, Microelectronic engineering, 37-8(1-4), 1997, pp. 573-579
CHARACTERIZATION OF SI WAFER BONDING BY INJECTION-DEPENDENT RECOMBINATION VELOCITY
Authors: GRIVICKAS V THUNGSTROM G BIKBAJEVAS V LINNROS J NOREIKA D
Citation: V. Grivickas et al., CHARACTERIZATION OF SI WAFER BONDING BY INJECTION-DEPENDENT RECOMBINATION VELOCITY, JPN J A P 2, 34(7A), 1995, pp. 806-809
EXPERIMENTAL IDENTIFICATION OF THE OPTICAL PHONON OF COSI2 IN THE INFRARED
Authors: BOCELLI S GUIZZETTI G MARABELLI F THUNGSTROM G PETERSSON CS
Citation: S. Bocelli et al., EXPERIMENTAL IDENTIFICATION OF THE OPTICAL PHONON OF COSI2 IN THE INFRARED, Applied surface science, 91(1-4), 1995, pp. 30-33
PROCESSING AND CHARACTERIZATION OF AN ETCHED GROOVE PERMEABLE BASE TRANSISTOR ON GH-SIC
Authors: FROJDH C THUNGSTROM G HATZIKONSTANTINIDOU S NILSSON HE PETERSSON CS
Citation: C. Frojdh et al., PROCESSING AND CHARACTERIZATION OF AN ETCHED GROOVE PERMEABLE BASE TRANSISTOR ON GH-SIC, Physica scripta. T, 54, 1994, pp. 56-59
CONTACTS TO MONOCRYSTALLINE N-TYPE AND P-TYPE SILICON BY WAFER BONDING USING COBALT DISILICIDE
Authors: THUNGSTROM G FROJDH C SVEDBERG P PETERSSON CS
Citation: G. Thungstrom et al., CONTACTS TO MONOCRYSTALLINE N-TYPE AND P-TYPE SILICON BY WAFER BONDING USING COBALT DISILICIDE, Physica scripta. T, 54, 1994, pp. 77-80
UV-SENSITIVE PHOTODETECTORS BASED ON METAL-SEMICONDUCTOR CONTACTS ON 6H-SIC
Authors: FROJDH C THUNGSTROM G NILSSON HE PETERSSON CS
Citation: C. Frojdh et al., UV-SENSITIVE PHOTODETECTORS BASED ON METAL-SEMICONDUCTOR CONTACTS ON 6H-SIC, Physica scripta. T, 54, 1994, pp. 169-171
BURIED COBALT SILICIDE LAYERS IN SILICON CREATED BY WAFER BONDING
Authors: LJUNGBERG K SODERBARG A TIENSUU AL JOHANSSON S THUNGSTROM G PETERSSON CS
Citation: K. Ljungberg et al., BURIED COBALT SILICIDE LAYERS IN SILICON CREATED BY WAFER BONDING, Journal of the Electrochemical Society, 141(10), 1994, pp. 2829-2833
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