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Results: 1-25 | 26-35
Results: 1-25/35
RESONANT INELASTIC SOFT-X-RAY SCATTERING AT THE SI L-3 EDGE - EXPERIMENT AND THEORY
Authors: EISEBITT S LUNING J RUBENSSON JE SETTELS A DEDERICHS PH EBERHARDT W PATITSAS SN TIEDJE T
Citation: S. Eisebitt et al., RESONANT INELASTIC SOFT-X-RAY SCATTERING AT THE SI L-3 EDGE - EXPERIMENT AND THEORY, Journal of electron spectroscopy and related phenomena, 93(1-3), 1998, pp. 245-250
DIFFUSION STUDIES OF RA AND PB IN GAAS BY THE ALPHA-PARTICLE ENERGY-LOSS METHOD
Authors: ADAMCYK M BEAUDOIN M KELSON I LEVY Y TIEDJE T
Citation: M. Adamcyk et al., DIFFUSION STUDIES OF RA AND PB IN GAAS BY THE ALPHA-PARTICLE ENERGY-LOSS METHOD, Journal of applied physics, 84(11), 1998, pp. 6003-6006
FILM THICKNESS AND COMPOSITION MONITORING DURING GROWTH BY MOLECULAR-BEAM EPITAXY USING ALPHA-PARTICLE ENERGY-LOSS
Authors: BEAUDOIN M ADAMCYK M GELBART Z GIESEN U KELSON I LEVY Y MACKENZIE JA TIEDJE T
Citation: M. Beaudoin et al., FILM THICKNESS AND COMPOSITION MONITORING DURING GROWTH BY MOLECULAR-BEAM EPITAXY USING ALPHA-PARTICLE ENERGY-LOSS, Applied physics letters, 72(25), 1998, pp. 3288-3290
SCANNING-TUNNELING-MICROSCOPY AND LOW-ENERGY-ELECTRON DIFFRACTION STUDY OF THE FORMATION OF A ROOT-3X-ROOT-3R30-DEGREES RECONSTRUCTION ON THE HYDROGEN ETCHED SI(111) 1X1 SURFACE
Authors: ROGERS D TIEDJE T
Citation: D. Rogers et T. Tiedje, SCANNING-TUNNELING-MICROSCOPY AND LOW-ENERGY-ELECTRON DIFFRACTION STUDY OF THE FORMATION OF A ROOT-3X-ROOT-3R30-DEGREES RECONSTRUCTION ON THE HYDROGEN ETCHED SI(111) 1X1 SURFACE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1641-1646
EFFECT OF GROWTH-CONDITIONS ON SURFACE ROUGHENING OF RELAXED INGAAS ON GAAS
Authors: PINNINGTON T LAVOIE C TIEDJE T
Citation: T. Pinnington et al., EFFECT OF GROWTH-CONDITIONS ON SURFACE ROUGHENING OF RELAXED INGAAS ON GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1265-1269
ELIMINATION OF LOW-FREQUENCY GAIN IN INALAS INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS BY SILICON NITRIDE-PASSIVATION/
Authors: DECORBY RG MACDONALD RI BEAUDOIN M PINNINGTON T TIEDJE T GOUIN F
Citation: Rg. Decorby et al., ELIMINATION OF LOW-FREQUENCY GAIN IN INALAS INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS BY SILICON NITRIDE-PASSIVATION/, Journal of electronic materials, 26(12), 1997, pp. 25-28
SURFACE MODIFICATION AND IMAGING OF HYDROGEN PASSIVATED SILICON WITH A COMBINED SCANNING ELECTRON SCANNING TUNNELING MICROSCOPE
Authors: COOPE RJN TIEDJE T KONSEK SL PEARSALL TP
Citation: Rjn. Coope et al., SURFACE MODIFICATION AND IMAGING OF HYDROGEN PASSIVATED SILICON WITH A COMBINED SCANNING ELECTRON SCANNING TUNNELING MICROSCOPE, Ultramicroscopy, 68(4), 1997, pp. 257-266
SOFT-X-RAY FLUORESCENCE OF POROUS SILICON - ELECTRONIC-STRUCTURE OF SI NANOSTRUCTURES
Authors: EISEBITT S PATITSAS SN LUNING J RUBENSSON JE TIEDJE T VANBUUREN T EBERHARDT W
Citation: S. Eisebitt et al., SOFT-X-RAY FLUORESCENCE OF POROUS SILICON - ELECTRONIC-STRUCTURE OF SI NANOSTRUCTURES, Europhysics letters, 37(2), 1997, pp. 133-138
IN-SITU THICKNESS MEASUREMENTS IN MOLECULAR-BEAM EPITAXY USING ALPHA-PARTICLE ENERGY-LOSS
Authors: BEAUDOIN M GELBART Z GIESSEN U KELSON I LEVY Y MACKENZIE JA PINNINGTON T RITCHIE S THORPE AJS STREATER R TIEDJE T
Citation: M. Beaudoin et al., IN-SITU THICKNESS MEASUREMENTS IN MOLECULAR-BEAM EPITAXY USING ALPHA-PARTICLE ENERGY-LOSS, Surface & coatings technology, 94-5(1-3), 1997, pp. 374-378
SEMICONDUCTOR SUBSTRATE CLEANING AND SURFACE-MORPHOLOGY IN MOLECULAR-BEAM EPITAXY
Authors: RITCHIE S JOHNSON SR LAVOIE C MACKENZIE JA TIEDJE T STREATER R
Citation: S. Ritchie et al., SEMICONDUCTOR SUBSTRATE CLEANING AND SURFACE-MORPHOLOGY IN MOLECULAR-BEAM EPITAXY, Surface science, 374(1-3), 1997, pp. 418-426
SURFACE-MORPHOLOGY DYNAMICS IN STRAINED EPITAXIAL INGAAS
Authors: PINNINGTON T LAVOIE C TIEDJE T HAVEMAN B NODWELL E
Citation: T. Pinnington et al., SURFACE-MORPHOLOGY DYNAMICS IN STRAINED EPITAXIAL INGAAS, Physical review letters, 79(9), 1997, pp. 1698-1701
THE APPLICABILITY OF IMPLANTED ALPHA-SOURCES TO THICKNESS AND STOICHIOMETRY MEASUREMENTS OF THIN-FILMS
Authors: KELSON I LEVY Y RACAH D REDMARD E BEAUDOIN M PINNINGTON T TIEDJE T GIESEN U
Citation: I. Kelson et al., THE APPLICABILITY OF IMPLANTED ALPHA-SOURCES TO THICKNESS AND STOICHIOMETRY MEASUREMENTS OF THIN-FILMS, Journal of physics. D, Applied physics, 30(1), 1997, pp. 131-136
EFFECT OF SUBSTRATE THICKNESS, BACK SURFACE TEXTURE, REFLECTIVITY, AND THIN-FILM INTERFERENCE ON OPTICAL BAND-GAP THERMOMETRY
Authors: JOHNSON SR TIEDJE T
Citation: Sr. Johnson et T. Tiedje, EFFECT OF SUBSTRATE THICKNESS, BACK SURFACE TEXTURE, REFLECTIVITY, AND THIN-FILM INTERFERENCE ON OPTICAL BAND-GAP THERMOMETRY, Journal of crystal growth, 175, 1997, pp. 273-280
IN-SITU DETECTION OF MISFIT DISLOCATIONS BY LIGHT-SCATTERING
Authors: KAVANAGH KL GOLDMAN RS LAVOIE C LEDUC B PINNINGTON T TIEDJE T KLUG D TSE J
Citation: Kl. Kavanagh et al., IN-SITU DETECTION OF MISFIT DISLOCATIONS BY LIGHT-SCATTERING, Journal of crystal growth, 174(1-4), 1997, pp. 550-557
OPTICAL-ABSORPTION EDGE OF SEMIINSULATING GAAS AND INP AT HIGH-TEMPERATURES
Authors: BEAUDOIN M DEVRIES AJG JOHNSON SR LAMAN H TIEDJE T
Citation: M. Beaudoin et al., OPTICAL-ABSORPTION EDGE OF SEMIINSULATING GAAS AND INP AT HIGH-TEMPERATURES, Applied physics letters, 70(26), 1997, pp. 3540-3542
SELECTIVE SURFACE MODIFICATIONS WITH A SCANNING TUNNELING MICROSCOPE
Authors: KONSEK SL COOPE RJN PEARSALL TP TIEDJE T
Citation: Sl. Konsek et al., SELECTIVE SURFACE MODIFICATIONS WITH A SCANNING TUNNELING MICROSCOPE, Applied physics letters, 70(14), 1997, pp. 1846-1848
OBSERVATION OF LEAKY SLAB MODES IN AN AIR-BRIDGED SEMICONDUCTOR WAVE-GUIDE WITH A 2-DIMENSIONAL PHOTONIC LATTICE
Authors: KANSKAR M PADDON P PACRADOUNI V MORIN R BUSCH A YOUNG JF JOHNSON SR MACKENZIE J TIEDJE T
Citation: M. Kanskar et al., OBSERVATION OF LEAKY SLAB MODES IN AN AIR-BRIDGED SEMICONDUCTOR WAVE-GUIDE WITH A 2-DIMENSIONAL PHOTONIC LATTICE, Applied physics letters, 70(11), 1997, pp. 1438-1440
SOFT-X-RAY EMISSION OF POROUS SILICON NANOSTRUCTURES
Authors: EISEBITT S LUNING J RUBENSSON JE VANBUUREN T PATITSAS SN TIEDJE T BERGER M ARENSFISCHER R FROHNHOFF S EBERHARDT W
Citation: S. Eisebitt et al., SOFT-X-RAY EMISSION OF POROUS SILICON NANOSTRUCTURES, Journal of electron spectroscopy and related phenomena, 79, 1996, pp. 135-138
BINDING-ENERGIES OF HYDROGEN TO THE SI(111) 7X7 SURFACE STUDIED BY STATISTICAL SCANNING-TUNNELING-MICROSCOPY
Authors: ROGERS D TIEDJE T
Citation: D. Rogers et T. Tiedje, BINDING-ENERGIES OF HYDROGEN TO THE SI(111) 7X7 SURFACE STUDIED BY STATISTICAL SCANNING-TUNNELING-MICROSCOPY, Physical review. B, Condensed matter, 53(20), 1996, pp. 13227-13230
QUANTUM CONFINEMENT EFFECTS IN THE SOFT-X-RAY FLUORESCENCE-SPECTRA OFPOROUS SILICON NANOSTRUCTURES
Authors: EISEBITT S LUNING J RUBENSSON JE VANBUUREN T PATITSAS SN TIEDJE T BERGER M ARENSFISCHER R FROHNHOFF S EBERHARDT W
Citation: S. Eisebitt et al., QUANTUM CONFINEMENT EFFECTS IN THE SOFT-X-RAY FLUORESCENCE-SPECTRA OFPOROUS SILICON NANOSTRUCTURES, Solid state communications, 97(7), 1996, pp. 549-552
CONTRIBUTION OF SINGLE INGAAS QUANTUM-WELLS TO THE GUIDED MODE DISPERSION OF INGAAS GAAS/ALGAAS WAVE-GUIDES - MODEL AND EXPERIMENTAL RESULTS/
Authors: PACRADOUNI V MORIN R KANSKAR M YOUNG JF JOHNSON SR TIEDJE T
Citation: V. Pacradouni et al., CONTRIBUTION OF SINGLE INGAAS QUANTUM-WELLS TO THE GUIDED MODE DISPERSION OF INGAAS GAAS/ALGAAS WAVE-GUIDES - MODEL AND EXPERIMENTAL RESULTS/, Journal of applied physics, 80(10), 1996, pp. 6039-6044
INDIUM-INDUCED SMOOTHING OF GAAS FILMS DURING MBE GROWTH
Authors: LAVOIE C PINNINGTON T TIEDJE T HUTTER JL SOERENSEN G STREATER R
Citation: C. Lavoie et al., INDIUM-INDUCED SMOOTHING OF GAAS FILMS DURING MBE GROWTH, Canadian journal of physics, 74, 1996, pp. 49-53
FIELD-EMISSION SEM IMAGING OF COMPOSITIONAL AND DOPING LAYER SEMICONDUCTOR SUPERLATTICES
Authors: PEROVIC DD CASTELL MR HOWIE A LAVOIE C TIEDJE T COLE JSW
Citation: Dd. Perovic et al., FIELD-EMISSION SEM IMAGING OF COMPOSITIONAL AND DOPING LAYER SEMICONDUCTOR SUPERLATTICES, Ultramicroscopy, 58(1), 1995, pp. 104-113
TEMPERATURE-DEPENDENCE OF THE URBACH EDGE IN GAAS
Authors: JOHNSON SR TIEDJE T
Citation: Sr. Johnson et T. Tiedje, TEMPERATURE-DEPENDENCE OF THE URBACH EDGE IN GAAS, Journal of applied physics, 78(9), 1995, pp. 5609-5613
RELATIONSHIP BETWEEN SURFACE-MORPHOLOGY AND STRAIN RELAXATION DURING GROWTH OF INGAAS STRAINED LAYERS
Authors: LAVOIE C PINNINGTON T NODWELL E TIEDJE T GOLDMAN RS KAVANAGH KL HUTTER JL
Citation: C. Lavoie et al., RELATIONSHIP BETWEEN SURFACE-MORPHOLOGY AND STRAIN RELAXATION DURING GROWTH OF INGAAS STRAINED LAYERS, Applied physics letters, 67(25), 1995, pp. 3744-3746
Risultati: 1-25 | 26-35