Authors:
TIPISEV SY
PONOMAREVA NB
GOLUBOK OA
MALEV VV
KONDRATEV VV
Citation: Sy. Tipisev et al., SCANNING-TUNNELING-MICROSCOPY OF THE SURFACE OF THE BERLIN-BLUE FILMSDEPOSITED ELECTROCHEMICALLY, Russian journal of electrochemistry, 34(1), 1998, pp. 80-86
Authors:
TSYRLIN GE
PETROV VN
DUBROVSKII VG
POLYAKOV NK
TIPISEV SY
GOLUBOK AO
LEDENTSOV NN
Citation: Ge. Tsyrlin et al., FORMATION OF INGAAS GAAS NANOSTRUCTURES BY SUBMONOLAYER DEPOSITION FROM MOLECULAR-BEAMS/, Semiconductors, 31(8), 1997, pp. 768-772
Authors:
GURYANOV GM
TSYRLIN GE
PETROV VN
SAMSONENKO YB
GUBANOV VB
POLYAKOV NK
GOLUBOK AO
TIPISEV SY
MUSIKHINA EP
Citation: Gm. Guryanov et al., SELF-ORGANIZATION OF STRAINED QUANTUM-SIZE INXGA1-XAS STRUCTURES GROWN ON MISORIENTED (100)SURFACES OF GAAS DURING SUBMONOLAYER MOLECULAR-BEAM EPITAXY, Semiconductors, 29(9), 1995, pp. 854-857
Authors:
LEDENTSOV NN
GURYANOV GM
TSYRLIN GE
PETROV VN
SAMSONENKO YB
GOLUBOK AO
TIPISEV SY
Citation: Nn. Ledentsov et al., EFFECT OF HEAT-TREATMENT CONDITIONS ON THE SURFACE-MORPHOLOGY OF GALLIUM-ARSENIDE GROWN ON VICINAL GAAS (100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Semiconductors, 28(5), 1994, pp. 526-527
Authors:
GOLUBOK AO
GURYANOV GM
PETROV VN
SAMSONENKO YB
TIPISEV SY
TSYRLIN GE
LEDENTSOV NN
Citation: Ao. Golubok et al., FORMATION OF ARRAYS OF FACETS ON VICINAL SURFACES OF GAAS (100) DURING MOLECULAR-BEAM EPITAXY, Semiconductors, 28(3), 1994, pp. 317-319