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Results: 1-7 |
Results: 7

Authors: TIPISEV SY PONOMAREVA NB GOLUBOK OA MALEV VV KONDRATEV VV
Citation: Sy. Tipisev et al., SCANNING-TUNNELING-MICROSCOPY OF THE SURFACE OF THE BERLIN-BLUE FILMSDEPOSITED ELECTROCHEMICALLY, Russian journal of electrochemistry, 34(1), 1998, pp. 80-86

Authors: TSYRLIN GE PETROV VN DUBROVSKII VG POLYAKOV NK TIPISEV SY GOLUBOK AO LEDENTSOV NN
Citation: Ge. Tsyrlin et al., FORMATION OF INGAAS GAAS NANOSTRUCTURES BY SUBMONOLAYER DEPOSITION FROM MOLECULAR-BEAMS/, Semiconductors, 31(8), 1997, pp. 768-772

Authors: TSYRLIN GE GOLUBOK AO TIPISEV SY LEDENTSOV NN GURYANOV GM
Citation: Ge. Tsyrlin et al., INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER MIGRATION-ENHANCED EPITAXY (VOL 29, PG 884, 1995)/, Semiconductors, 30(3), 1996, pp. 314-314

Authors: GURYANOV GM TSYRLIN GE PETROV VN SAMSONENKO YB GUBANOV VB POLYAKOV NK GOLUBOK AO TIPISEV SY MUSIKHINA EP
Citation: Gm. Guryanov et al., SELF-ORGANIZATION OF STRAINED QUANTUM-SIZE INXGA1-XAS STRUCTURES GROWN ON MISORIENTED (100)SURFACES OF GAAS DURING SUBMONOLAYER MOLECULAR-BEAM EPITAXY, Semiconductors, 29(9), 1995, pp. 854-857

Authors: TSYRLIN GE GOLUBOK AO TIPISEV SY LEDENTSOV NN
Citation: Ge. Tsyrlin et al., INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER MIGRATION-ENHANCED EPITAXY/, Semiconductors, 29(9), 1995, pp. 884-886

Authors: LEDENTSOV NN GURYANOV GM TSYRLIN GE PETROV VN SAMSONENKO YB GOLUBOK AO TIPISEV SY
Citation: Nn. Ledentsov et al., EFFECT OF HEAT-TREATMENT CONDITIONS ON THE SURFACE-MORPHOLOGY OF GALLIUM-ARSENIDE GROWN ON VICINAL GAAS (100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Semiconductors, 28(5), 1994, pp. 526-527

Authors: GOLUBOK AO GURYANOV GM PETROV VN SAMSONENKO YB TIPISEV SY TSYRLIN GE LEDENTSOV NN
Citation: Ao. Golubok et al., FORMATION OF ARRAYS OF FACETS ON VICINAL SURFACES OF GAAS (100) DURING MOLECULAR-BEAM EPITAXY, Semiconductors, 28(3), 1994, pp. 317-319
Risultati: 1-7 |