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Results: 1-17 |
Results: 17
SPACE CORRELATIONS AND THE PAIRING INTERACTION IN NUCLEI
Authors: TISCHLER MA TONINA A DUSSEL GG
Citation: Ma. Tischler et al., SPACE CORRELATIONS AND THE PAIRING INTERACTION IN NUCLEI, Physical review. C. Nuclear physics, 58(4), 1998, pp. 2591-2594
TRANSPORT-COEFFICIENTS OF ALGAN GAN HETEROSTRUCTURES/
Authors: AHOUJJA M MITCHEL WC ELHAMRI S NEWROCK RS MAST DB REDWING JM TISCHLER MA FLYNN JS
Citation: M. Ahoujja et al., TRANSPORT-COEFFICIENTS OF ALGAN GAN HETEROSTRUCTURES/, Journal of electronic materials, 27(4), 1998, pp. 210-214
AL0.15GA0.85N GAN HETEROSTRUCTURE - EFFECTIVE-MASS AND SCATTERING TIMES/
Authors: ELHAMRI S NEWROCK RS MAST DB AHOUJJA M MITCHEL WC REDWING JM TISCHLER MA FLYNN JS
Citation: S. Elhamri et al., AL0.15GA0.85N GAN HETEROSTRUCTURE - EFFECTIVE-MASS AND SCATTERING TIMES/, Physical review. B, Condensed matter, 57(3), 1998, pp. 1374-1377
LUMINESCENCE FROM POROUS SILICON - MECHANISM DEBATED - REPLY
Authors: COLLINS RT FAUCHET PM TISCHLER MA
Citation: Rt. Collins et al., LUMINESCENCE FROM POROUS SILICON - MECHANISM DEBATED - REPLY, Physics today, 50(8), 1997, pp. 83-83
POROUS SILICON - FROM LUMINESCENCE TO LEDS
Authors: COLLINS RT FAUCHET PM TISCHLER MA
Citation: Rt. Collins et al., POROUS SILICON - FROM LUMINESCENCE TO LEDS, Physics today, 50(1), 1997, pp. 24-31
GAN FILMS STUDIED BY NEAR-FIELD SCANNING OPTICAL MICROSCOPY, ATOMIC-FORCE MICROSCOPY AND HIGH-RESOLUTION X-RAY-DIFFRACTION
Authors: LIU JT ZHI D REDWING JM TISCHLER MA KUECH TF
Citation: Jt. Liu et al., GAN FILMS STUDIED BY NEAR-FIELD SCANNING OPTICAL MICROSCOPY, ATOMIC-FORCE MICROSCOPY AND HIGH-RESOLUTION X-RAY-DIFFRACTION, Journal of crystal growth, 170(1-4), 1997, pp. 357-361
ELECTRON-PHONON INTERACTIONS IN CSCDBR3-YB3+
Authors: HEHLEN MP KUDITCHER A RAND SC TISCHLER MA
Citation: Mp. Hehlen et al., ELECTRON-PHONON INTERACTIONS IN CSCDBR3-YB3+, The Journal of chemical physics, 107(13), 1997, pp. 4886-4892
GAN GROWTH BY METALLORGANIC VAPOR-PHASE EPITAXY - A COMPARISON OF MODELING AND EXPERIMENTAL MEASUREMENTS
Authors: SAFVI SA REDWING JM TISCHLER MA KUECH TF
Citation: Sa. Safvi et al., GAN GROWTH BY METALLORGANIC VAPOR-PHASE EPITAXY - A COMPARISON OF MODELING AND EXPERIMENTAL MEASUREMENTS, Journal of the Electrochemical Society, 144(5), 1997, pp. 1789-1796
2-DIMENSIONAL ELECTRON-GAS PROPERTIES OF ALGAN GAN HETEROSTRUCTURES GROWN ON 6H-SIC AND SAPPHIRE SUBSTRATES/
Authors: REDWING JM TISCHLER MA FLYNN JS ELHAMRI S AHOUJJA M NEWROCK RS MITCHEL WC
Citation: Jm. Redwing et al., 2-DIMENSIONAL ELECTRON-GAS PROPERTIES OF ALGAN GAN HETEROSTRUCTURES GROWN ON 6H-SIC AND SAPPHIRE SUBSTRATES/, Applied physics letters, 69(7), 1996, pp. 963-965
A NEAR-FIELD SCANNING OPTICAL MICROSCOPY STUDY OF THE PHOTOLUMINESCENCE FROM GAN FILMS
Authors: LIU JT PERKINS NR HORTON MN REDWING JM TISCHLER MA KUECH TF
Citation: Jt. Liu et al., A NEAR-FIELD SCANNING OPTICAL MICROSCOPY STUDY OF THE PHOTOLUMINESCENCE FROM GAN FILMS, Applied physics letters, 69(23), 1996, pp. 3519-3521
AN OPTICALLY PUMPED GAN-ALGAN VERTICAL-CAVITY SURFACE-EMITTING LASER
Authors: REDWING JM LOEBER DAS ANDERSON NG TISCHLER MA FLYNN JS
Citation: Jm. Redwing et al., AN OPTICALLY PUMPED GAN-ALGAN VERTICAL-CAVITY SURFACE-EMITTING LASER, Applied physics letters, 69(1), 1996, pp. 1-3
ELECTROCHEMICAL INVESTIGATION OF THE GALLIUM NITRIDE-AQUEOUS ELECTROLYTE INTERFACE
Authors: KOCHA SS PETERSON MW ARENT DJ REDWING JM TISCHLER MA TURNER JA
Citation: Ss. Kocha et al., ELECTROCHEMICAL INVESTIGATION OF THE GALLIUM NITRIDE-AQUEOUS ELECTROLYTE INTERFACE, Journal of the Electrochemical Society, 142(12), 1995, pp. 238-240
DISPERSION MEASUREMENTS OF HOT HOLES IN QUANTUM-WELLS
Authors: KASH JA ZACHAU M TISCHLER MA EKENBERG U
Citation: Ja. Kash et al., DISPERSION MEASUREMENTS OF HOT HOLES IN QUANTUM-WELLS, Semiconductor science and technology, 9(5), 1994, pp. 681-685
OPTICAL MEASUREMENTS OF WARPED VALENCE BANDS IN QUANTUM-WELLS
Authors: KASH JA ZACHAU M TISCHLER MA EKENBERG U
Citation: Ja. Kash et al., OPTICAL MEASUREMENTS OF WARPED VALENCE BANDS IN QUANTUM-WELLS, Surface science, 305(1-3), 1994, pp. 251-255
POROUS SILICON SHEDS A NEW LIGHT ON OEICS
Authors: COLLINS RT TISCHLER MA
Citation: Rt. Collins et Ma. Tischler, POROUS SILICON SHEDS A NEW LIGHT ON OEICS, IEEE circuits and devices magazine, 9(5), 1993, pp. 22-28
STABILITY OF VISIBLE LUMINESCENCE FROM POROUS SILICON
Authors: BATSTONE JL TISCHLER MA COLLINS RT
Citation: Jl. Batstone et al., STABILITY OF VISIBLE LUMINESCENCE FROM POROUS SILICON, Applied physics letters, 62(21), 1993, pp. 2667-2669
LATERAL GA0.47IN0.53AS AND GAAS P-I-N PHOTODETECTORS BY SELF-ALIGNED DIFFUSION
Authors: TIWARI S BURROUGHES J MILSHTEIN MS TISCHLER MA WRIGHT SL
Citation: S. Tiwari et al., LATERAL GA0.47IN0.53AS AND GAAS P-I-N PHOTODETECTORS BY SELF-ALIGNED DIFFUSION, IEEE photonics technology letters, 4(4), 1992, pp. 396-398
Risultati: 1-17 |