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Results: 1-13 |
Results: 13
TRANSPORT IN SILICON GERMANIUM NANOSTRUCTURES
Authors: HOLZMANN M TOBBEN D ABSTREITER G
Citation: M. Holzmann et al., TRANSPORT IN SILICON GERMANIUM NANOSTRUCTURES, Applied surface science, 102, 1996, pp. 230-236
MAGNETOTRANSPORT OF ELECTRONS IN ARRAYS OF WIRES IN SI SI0.7GE0.3 HETEROSTRUCTURES/
Authors: HOLZMANN M TOBBEN D BAUMGARTNER P ABSTREITER G KRIELE A LORENZ H SCHAFFLER F
Citation: M. Holzmann et al., MAGNETOTRANSPORT OF ELECTRONS IN ARRAYS OF WIRES IN SI SI0.7GE0.3 HETEROSTRUCTURES/, Surface science, 362(1-3), 1996, pp. 673-676
QUANTIZED CONDUCTANCE IN A SI SI0.7GE0.3 SPLIT-GATE DEVICE AND IMPURITY-RELATED MAGNETOTRANSPORT PHENOMENA/
Authors: TOBBEN D WHARAM DA ABSTREITER G KOTTHAUS JP SCHAFFLER F
Citation: D. Tobben et al., QUANTIZED CONDUCTANCE IN A SI SI0.7GE0.3 SPLIT-GATE DEVICE AND IMPURITY-RELATED MAGNETOTRANSPORT PHENOMENA/, Solid-state electronics, 40(1-8), 1996, pp. 405-408
BALLISTIC ELECTRON-TRANSPORT THROUGH A QUANTUM POINT-CONTACT DEFINED IN A SI SI0.7GE0.3 HETEROSTRUCTURE/
Authors: TOBBEN D WHARAM DA ABSTREITER G KOTTHAUS JP SCHAFFLER F
Citation: D. Tobben et al., BALLISTIC ELECTRON-TRANSPORT THROUGH A QUANTUM POINT-CONTACT DEFINED IN A SI SI0.7GE0.3 HETEROSTRUCTURE/, Semiconductor science and technology, 10(5), 1995, pp. 711-714
ANTIDOT SUPERLATTICES IN 2-DIMENSIONAL HOLE GASES CONFINED IN STRAINED GERMANIUM LAYERS
Authors: TOBBEN D HOLZMANN M ABSTREITER G KRIELE A LORENZ H KOTTHAUS JP SCHAFFLER F XIE YH SILVERMAN PJ MONROE D
Citation: D. Tobben et al., ANTIDOT SUPERLATTICES IN 2-DIMENSIONAL HOLE GASES CONFINED IN STRAINED GERMANIUM LAYERS, Semiconductor science and technology, 10(10), 1995, pp. 1413-1417
TRANSPORT-PROPERTIES OF A SI SIGE QUANTUM POINT-CONTACT IN THE PRESENCE OF IMPURITIES/
Authors: TOBBEN D WHARAM DA ABSTREITER G KOTTHAUS JP SCHAFFLER F
Citation: D. Tobben et al., TRANSPORT-PROPERTIES OF A SI SIGE QUANTUM POINT-CONTACT IN THE PRESENCE OF IMPURITIES/, Physical review. B, Condensed matter, 52(7), 1995, pp. 4704-4707
GROWTH AND PROPERTIES OF HIGH-MOBILITY 2-DIMENSIONAL HOLE GASES IN GEON RELAXED SI SIGE, GE/SICE BUFFERS AND GE SUBSTRATES/
Authors: NUTZEL JF ENGELHARDT CM WIESNER R TOBBEN D HOLZMANN M ABSTREITER G
Citation: Jf. Nutzel et al., GROWTH AND PROPERTIES OF HIGH-MOBILITY 2-DIMENSIONAL HOLE GASES IN GEON RELAXED SI SIGE, GE/SICE BUFFERS AND GE SUBSTRATES/, Journal of crystal growth, 150(1-4), 1995, pp. 1011-1014
IN-PLANE-GATE TRANSISTORS FABRICATED FROM SI SIGE HETEROSTRUCTURES BYFOCUSED ION-BEAM IMPLANTATION/
Authors: TOBBEN D DEVRIES DK WIECK AD HOLZMANN M ABSTREITER G SCHAFFLER F
Citation: D. Tobben et al., IN-PLANE-GATE TRANSISTORS FABRICATED FROM SI SIGE HETEROSTRUCTURES BYFOCUSED ION-BEAM IMPLANTATION/, Applied physics letters, 67(11), 1995, pp. 1579-1581
ONE-DIMENSIONAL TRANSPORT OF ELECTRONS IN SI SI0.7GE0.3 HETEROSTRUCTURES/
Authors: HOLZMANN M TOBBEN D ABSTREITER G WENDEL M LORENZ H KOTTHAUS JP SCHAFFLER F
Citation: M. Holzmann et al., ONE-DIMENSIONAL TRANSPORT OF ELECTRONS IN SI SI0.7GE0.3 HETEROSTRUCTURES/, Applied physics letters, 66(7), 1995, pp. 833-835
ELECTRON-TRANSPORT THROUGH ANTIDOT SUPERLATTICES IN SI SI0.7GE0.3 HETEROSTRUCTURES/
Authors: TOBBEN D HOLZMANN M KUHN S LORENZ H ABSTREITER G KOTTHAUS JP SCHAFFLER F
Citation: D. Tobben et al., ELECTRON-TRANSPORT THROUGH ANTIDOT SUPERLATTICES IN SI SI0.7GE0.3 HETEROSTRUCTURES/, Physical review. B, Condensed matter, 50(12), 1994, pp. 8853-8856
HIGH-MOBILITY 2-D HOLE GASES IN STRAINED GE CHANNELS ON SI SUBSTRATESSTUDIED BY MAGNETOTRANSPORT AND CYCLOTRON-RESONANCE
Authors: ENGELHARDT CM TOBBEN D ASCHAUER M SCHAFFLER F ABSTREITER G GORNIK E
Citation: Cm. Engelhardt et al., HIGH-MOBILITY 2-D HOLE GASES IN STRAINED GE CHANNELS ON SI SUBSTRATESSTUDIED BY MAGNETOTRANSPORT AND CYCLOTRON-RESONANCE, Solid-state electronics, 37(4-6), 1994, pp. 949-952
FIELD-EFFECT INDUCED ELECTRON CHANNELS IN A SI SI0.7GE0.3 HETEROSTRUCTURE/
Authors: HOLZMANN M TOBBEN D ABSTREITER G SCHAFFLER F
Citation: M. Holzmann et al., FIELD-EFFECT INDUCED ELECTRON CHANNELS IN A SI SI0.7GE0.3 HETEROSTRUCTURE/, Journal of applied physics, 76(6), 1994, pp. 3917-3919
HIGH-MOBILITY 2-DIMENSIONAL ELECTRON GASES IN SI SI1-XGEX HETEROSTRUCTURES GROWN BY MBE/
Authors: TOBBEN D SCHAFFLER F BESSON M ENGELHARDT CM ZRENNER A ABSTREITER G GORNIK E
Citation: D. Tobben et al., HIGH-MOBILITY 2-DIMENSIONAL ELECTRON GASES IN SI SI1-XGEX HETEROSTRUCTURES GROWN BY MBE/, Journal of crystal growth, 127(1-4), 1993, pp. 421-424
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